Технічний опис AOT2140L Alpha & Omega Semiconductor
Description: N, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 195A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V, Power Dissipation (Max): 8.3W (Ta), 272W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9985 pF @ 20 V.
Інші пропозиції AOT2140L
Фото | Назва | Виробник | Інформація |
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AOT2140L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 195A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 272W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9985 pF @ 20 V |
товар відсутній |
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AOT2140L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 136W; TO220 Mounting: THT Case: TO220 Polarisation: unipolar Power dissipation: 136W Type of transistor: N-MOSFET On-state resistance: 1.5mΩ Drain current: 195A Drain-source voltage: 40V Gate charge: 54nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |