AOT20B65M1 Alpha & Omega Semiconductor
Виробник: Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-220 Tube
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.01 грн |
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Технічний опис AOT20B65M1 Alpha & Omega Semiconductor
Description: IGBT 650V 20A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 322 ns, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 26ns/122ns, Switching Energy: 470µJ (on), 270µJ (off), Test Condition: 400V, 20A, 15Ohm, 15V, Gate Charge: 46 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 227 W.
Інші пропозиції AOT20B65M1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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AOT20B65M1 | Виробник : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 40A 227W 3-Pin(3+Tab) TO-220 Tube |
товар відсутній |
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AOT20B65M1 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO220; Eoff: 0.27mJ; Eon: 0.47mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO220 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 51ns Turn-off time: 135ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.27mJ Turn-on switching energy: 0.47mJ кількість в упаковці: 1 шт |
товар відсутній |
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AOT20B65M1 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 322 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 26ns/122ns Switching Energy: 470µJ (on), 270µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 46 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 227 W |
товар відсутній |
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AOT20B65M1 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO220; Eoff: 0.27mJ; Eon: 0.47mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO220 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 51ns Turn-off time: 135ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.27mJ Turn-on switching energy: 0.47mJ |
товар відсутній |