AONV110A60 Alpha & Omega Semiconductor

Description: N, Packaging: Tube, Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 19A, 10V, Power Dissipation (Max): 8.3W (Ta), 357W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 4-DFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 100 V.