AONS850A70 Alpha & Omega Semiconductor


aons850a70.pdf Виробник: Alpha & Omega Semiconductor
High Voltage MOSFETs (500V - 1000V)
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Технічний опис AONS850A70 Alpha & Omega Semiconductor

Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 7.6A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 1.4A, 10V, Power Dissipation (Max): 4.1W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 250µA, Supplier Device Package: 8-DFN-EP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V.

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AONS850A70 Виробник : Alpha & Omega Semiconductor Inc. AONS850A70.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 1.4A, 10V
Power Dissipation (Max): 4.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V
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