AONS66923 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 15A/47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Description: MOSFET N-CH 100V 15A/47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 37.06 грн |
Відгуки про товар
Написати відгук
Технічний опис AONS66923 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 15A/47A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V.
Інші пропозиції AONS66923 за ціною від 33.49 грн до 69.47 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AONS66923 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 15A/47A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V |
на замовлення 16415 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
AONS66923 | Виробник : Alpha & Omega Semiconductor | 100V N-Channel MOSFET |
товар відсутній |
||||||||||||||
AONS66923 | Виробник : Alpha & Omega Semiconductor | 100V N-Channel MOSFET |
товар відсутній |
||||||||||||||
AONS66923 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 19W; DFN5x6 Mounting: SMD Drain-source voltage: 100V Drain current: 30A On-state resistance: 10.8mΩ Type of transistor: N-MOSFET Power dissipation: 19W Polarisation: unipolar Gate charge: 12.5nC Kind of channel: enhanced Gate-source voltage: ±20V Case: DFN5x6 кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
AONS66923 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 19W; DFN5x6 Mounting: SMD Drain-source voltage: 100V Drain current: 30A On-state resistance: 10.8mΩ Type of transistor: N-MOSFET Power dissipation: 19W Polarisation: unipolar Gate charge: 12.5nC Kind of channel: enhanced Gate-source voltage: ±20V Case: DFN5x6 |
товар відсутній |