AONS66916 Alpha & Omega Semiconductor Inc.


AONS66916.pdf Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
на замовлення 2960 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+225.96 грн
10+ 195.83 грн
25+ 185.11 грн
100+ 150.56 грн
250+ 142.84 грн
500+ 128.16 грн
1000+ 106.32 грн
Мінімальне замовлення: 2
Відгуки про товар
Написати відгук

Технічний опис AONS66916 Alpha & Omega Semiconductor Inc.

Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Power Dissipation (Max): 215W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V.

Інші пропозиції AONS66916

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
AONS66916 AONS66916 Виробник : Alpha & Omega Semiconductor aons66916.pdf Trans MOSFET N-CH 100V 30A 8-Pin DFN EP T/R
товар відсутній
AONS66916 AONS66916 Виробник : Alpha & Omega Semiconductor aons66916.pdf Trans MOSFET N-CH 100V 30A 8-Pin DFN EP T/R
товар відсутній
AONS66916 AONS66916 Виробник : ALPHA & OMEGA SEMICONDUCTOR AONS66916.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 86W; DFN5x6
Mounting: SMD
Case: DFN5x6
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 86W
Polarisation: unipolar
Gate charge: 67nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
товар відсутній
AONS66916 Виробник : Alpha & Omega Semiconductor Inc. AONS66916.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
товар відсутній
AONS66916 AONS66916 Виробник : ALPHA & OMEGA SEMICONDUCTOR AONS66916.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 86W; DFN5x6
Mounting: SMD
Case: DFN5x6
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 86W
Polarisation: unipolar
Gate charge: 67nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній