AONS660A70F ALPHA&OMEGA
Виробник: ALPHA&OMEGA700V, A MOS5 TM N-CHANNEL POWER AONS660A70F TAONS660A70F
кількість в упаковці: 2 шт
на замовлення 5 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 170.38 грн |
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Технічний опис AONS660A70F ALPHA&OMEGA
Description: MOSFET N-CH 700V 1.7A/9.6A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9.6A (Tc), Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V, Power Dissipation (Max): 4.1W (Ta), 138W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFN-EP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V.
Інші пропозиції AONS660A70F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| AONS660A70F | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 1.7A/9.6A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9.6A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V Power Dissipation (Max): 4.1W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN-EP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
товар відсутній |
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| AONS660A70F | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 1.7A/9.6A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9.6A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V Power Dissipation (Max): 4.1W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN-EP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
товар відсутній |