на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 8.49 грн |
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Технічний опис AONR66406 Alpha & Omega Semiconductor
Description: MOSFET N-CH 40V 22A/30A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 27W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V.
Інші пропозиції AONR66406
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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AONR66406 | Виробник : Alpha & Omega Semiconductor |
 N-Channel MOSFET |
товар відсутній |
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AONR66406 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm Dimensions: 3x3mm Drain-source voltage: 40V Drain current: 30A On-state resistance: 6.1mΩ Type of transistor: N-MOSFET Power dissipation: 10.5W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DFN8 кількість в упаковці: 1 шт |
товар відсутній |
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AONR66406 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 22A/30A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V |
товар відсутній |
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AONR66406 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm Dimensions: 3x3mm Drain-source voltage: 40V Drain current: 30A On-state resistance: 6.1mΩ Type of transistor: N-MOSFET Power dissipation: 10.5W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DFN8 |
товар відсутній |