AONP36332 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 24A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.41 грн |
| 10+ | 70.98 грн |
| 25+ | 67.34 грн |
| 100+ | 51.91 грн |
| 250+ | 48.52 грн |
| 500+ | 42.88 грн |
| 1000+ | 33.3 грн |
Відгуки про товар
Написати відгук
Технічний опис AONP36332 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 24A/50A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V, Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V, Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-DFN-EP (3.3x3.3).
Інші пропозиції AONP36332
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| AONP36332 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 24A/50A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) |
товар відсутній |