Технічний опис AON7532E Alpha & Omega Semiconductor
Description: MOSFET N-CH 30V 30.5A/28A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 15 V.
Інші пропозиції AON7532E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AON7532E | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 21A; 11W; DFN3x3 EP Mounting: SMD Case: DFN3x3 EP Power dissipation: 11W Type of transistor: N-MOSFET Gate charge: 12.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 3.5mΩ Drain current: 21A Drain-source voltage: 30V Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
|
 |
AON7532E | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 30.5A/28A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 15 V |
товар відсутній |
|
|
|
AON7532E | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 30.5A/28A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 15 V |
товар відсутній |
|
|
|
AON7532E | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 11W; DFN3x3 EP Mounting: SMD Case: DFN3x3 EP Power dissipation: 11W Type of transistor: N-MOSFET Gate charge: 12.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 3.5mΩ Drain current: 21A Drain-source voltage: 30V Polarisation: unipolar |
товар відсутній |