Технічний опис AON7460 Alpha & Omega Semiconductor
Description: MOSFET N-CH 300V 1.2A/4A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 4A (Tc), Rds On (Max) @ Id, Vgs: 830mOhm @ 1.2A, 10V, Power Dissipation (Max): 3.1W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Інші пропозиції AON7460
| Фото | Назва | Виробник | Інформація |
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AON7460 | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 300V 4A 8-Pin DFN-A EP |
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AON7460 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 300V 4A 8-Pin DFN-A EP |
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AON7460 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 2.5A; 13W; DFN3x3A EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 2.5A Power dissipation: 13W Case: DFN3x3A EP Gate-source voltage: ±20V On-state resistance: 0.83Ω Mounting: SMD Gate charge: 6.8nC Kind of channel: enhanced кількість в упаковці: 5000 шт |
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AON7460 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 300V 1.2A/4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 4A (Tc) Rds On (Max) @ Id, Vgs: 830mOhm @ 1.2A, 10V Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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AON7460 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 300V 1.2A/4A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 4A (Tc) Rds On (Max) @ Id, Vgs: 830mOhm @ 1.2A, 10V Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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AON7460 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 2.5A; 13W; DFN3x3A EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 2.5A Power dissipation: 13W Case: DFN3x3A EP Gate-source voltage: ±20V On-state resistance: 0.83Ω Mounting: SMD Gate charge: 6.8nC Kind of channel: enhanced |
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