AON7404G Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 20A/20A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
на замовлення 3801 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.13 грн |
| 10+ | 31.77 грн |
| 100+ | 22.09 грн |
| 500+ | 16.19 грн |
| 1000+ | 13.16 грн |
| 2000+ | 11.76 грн |
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Технічний опис AON7404G Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 20A/20A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V, Power Dissipation (Max): 5W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V.
Інші пропозиції AON7404G
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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AON7404G | Виробник : Alpha & Omega Semiconductor |
20V N-Channel MOSFET |
товар відсутній |
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AON7404G | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 20A; 11W; DFN8; 3x3mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 20A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±12V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 31nC Kind of channel: enhanced Dimensions: 3x3mm кількість в упаковці: 1 шт |
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AON7404G | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 20A/20A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V Power Dissipation (Max): 5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V |
товар відсутній |
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AON7404G | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 20A; 11W; DFN8; 3x3mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 20A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±12V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 31nC Kind of channel: enhanced Dimensions: 3x3mm |
товар відсутній |