Технічний опис AON7290 Alpha & Omega Semiconductor
Description: MOSFET N CH 100V 15A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 12.6mOhm @ 15A, 10V, Power Dissipation (Max): 6.25W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: 8-DFN-EP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 50 V.
Інші пропозиції AON7290
| Фото | Назва | Виробник | Інформація |
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AON7290 | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 100V 50A 8-Pin DFN EP |
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AON7290 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 33W; DFN3.3x3.3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Power dissipation: 33W Case: DFN3.3x3.3 EP Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 9nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AON7290 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N CH 100V 15A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 15A, 10V Power Dissipation (Max): 6.25W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 50 V |
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AON7290 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 33W; DFN3.3x3.3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Power dissipation: 33W Case: DFN3.3x3.3 EP Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 9nC Kind of channel: enhanced |
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