Технічний опис AON6906A Alpha & Omega Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 23/30A; 12.5/18W; DFN5x6, Mounting: SMD, On-state resistance: 14.4/11.7mΩ, Type of transistor: N-MOSFET x2, Power dissipation: 12.5/18W, Polarisation: unipolar, Gate charge: 3.3/3.5nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Case: DFN5x6, Semiconductor structure: asymmetric, Drain-source voltage: 30V, Drain current: 23/30A, кількість в упаковці: 1 шт.
Інші пропозиції AON6906A
Фото | Назва | Виробник | Інформація |
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AON6906A | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 23/30A; 12.5/18W; DFN5x6 Mounting: SMD On-state resistance: 14.4/11.7mΩ Type of transistor: N-MOSFET x2 Power dissipation: 12.5/18W Polarisation: unipolar Gate charge: 3.3/3.5nC Kind of channel: enhanced Gate-source voltage: ±20V Case: DFN5x6 Semiconductor structure: asymmetric Drain-source voltage: 30V Drain current: 23/30A кількість в упаковці: 1 шт |
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AON6906A | Виробник : Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 9.1A/10A 8DFN |
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AON6906A | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 23/30A; 12.5/18W; DFN5x6 Mounting: SMD On-state resistance: 14.4/11.7mΩ Type of transistor: N-MOSFET x2 Power dissipation: 12.5/18W Polarisation: unipolar Gate charge: 3.3/3.5nC Kind of channel: enhanced Gate-source voltage: ±20V Case: DFN5x6 Semiconductor structure: asymmetric Drain-source voltage: 30V Drain current: 23/30A |
товар відсутній |