AON6810 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 16A; 12.5W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 12.5W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate; integrated temp sense diode
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 16A; 12.5W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 12.5W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate; integrated temp sense diode
кількість в упаковці: 1 шт
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Технічний опис AON6810 ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 16A; 12.5W; DFN5x6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 16A, Power dissipation: 12.5W, Case: DFN5x6, Gate-source voltage: ±20V, On-state resistance: 4.4mΩ, Mounting: SMD, Gate charge: 11nC, Kind of channel: enhanced, Semiconductor structure: common drain, Features of semiconductor devices: ESD protected gate; integrated temp sense diode, кількість в упаковці: 1 шт.
Інші пропозиції AON6810
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AON6810 | Виробник : Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 25A 8-DFN |
товар відсутній |
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AON6810 | Виробник : Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 25A 8-DFN |
товар відсутній |
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AON6810 | Виробник : Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 25A 8-DFN |
товар відсутній |
||
AON6810 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 16A; 12.5W; DFN5x6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 12.5W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate; integrated temp sense diode |
товар відсутній |