Технічний опис AOI468 Alpha & Omega Semiconductor
Description: MOSFET N CH 300V 11.5A TO252, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -50°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-251A, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V.
Інші пропозиції AOI468
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AOI468 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 8.3A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 8.3A Case: TO251A Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: THT Gate charge: 12.8nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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AOI468 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N CH 300V 11.5A TO252 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -50°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V |
товар відсутній |
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AOI468 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 8.3A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 8.3A Case: TO251A Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: THT Gate charge: 12.8nC Kind of channel: enhanced |
товар відсутній |