Технічний опис AO4296 Alpha & Omega Semiconductor
Description: MOSFET N-CH 100V 13.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 50 V.
Інші пропозиції AO4296
| Фото | Назва | Виробник | Інформація |
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AO4296 | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 100V 13.5A 8-Pin SOIC T/R |
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AO4296 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Gate charge: 18.5nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AO4296 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 13.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 50 V |
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AO4296 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Gate charge: 18.5nC Kind of channel: enhanced |
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