AIKBE50N65RF5ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 0.12mJ (on), 0.09mJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 0.12mJ (on), 0.09mJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
на замовлення 67 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 906.8 грн |
10+ | 769.51 грн |
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Технічний опис AIKBE50N65RF5ATMA1 Infineon Technologies
Description: SIC_DISCRETE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: PG-TO263-7-U04, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 16.8ns/136ns, Switching Energy: 0.12mJ (on), 0.09mJ (off), Test Condition: 400V, 25A, 9Ohm, 15V, Gate Charge: 108 nC, Grade: Automotive, Current - Collector (Ic) (Max): 96 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 326 W, Qualification: AEC-Q101.
Інші пропозиції AIKBE50N65RF5ATMA1 за ціною від 523.11 грн до 1169.88 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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AIKBE50N65RF5ATMA1 | Виробник : Infineon Technologies | IGBTs N |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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AIKBE50N65RF5ATMA1 | Виробник : Infineon Technologies | SIC_DISCRETE |
товар відсутній |
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AIKBE50N65RF5ATMA1 | Виробник : Infineon Technologies |
Description: SIC_DISCRETE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO263-7-U04 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16.8ns/136ns Switching Energy: 0.12mJ (on), 0.09mJ (off) Test Condition: 400V, 25A, 9Ohm, 15V Gate Charge: 108 nC Grade: Automotive Current - Collector (Ic) (Max): 96 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 326 W Qualification: AEC-Q101 |
товар відсутній |