Технічний опис 71256L55DB Renesas / IDT
Description: IC SRAM 256KBIT PARALLEL 28CDIP, Packaging: Tube, Package / Case: 28-CDIP (0.600", 15.24mm), Mounting Type: Through Hole, Memory Size: 256Kbit, Memory Type: Volatile, Operating Temperature: -55°C ~ 125°C (TA), Voltage - Supply: 4.5V ~ 5.5V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 28-CDIP, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 32K x 8, DigiKey Programmable: Not Verified.
Інші пропозиції 71256L55DB
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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71256L55DB | Виробник : Renesas Electronics America Inc |
![]() Packaging: Tube Package / Case: 28-CDIP (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-CDIP Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
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