Технічний опис 71256L45TDB Renesas / IDT
Description: IC SRAM 256KBIT PARALLEL 28CDIP, Packaging: Tube, Package / Case: 28-CDIP (0.300", 7.62mm), Mounting Type: Through Hole, Memory Size: 256Kbit, Memory Type: Volatile, Operating Temperature: -55°C ~ 125°C (TA), Voltage - Supply: 4.5V ~ 5.5V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 28-CDIP, Write Cycle Time - Word, Page: 45ns, Memory Interface: Parallel, Access Time: 45 ns, Memory Organization: 32K x 8, DigiKey Programmable: Not Verified.
Інші пропозиції 71256L45TDB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| 71256L45TDB | Виробник : Renesas Electronics America Inc |
 Description: IC SRAM 256KBIT PARALLEL 28CDIPPackaging: Tube Package / Case: 28-CDIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-CDIP Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товар відсутній |