71256L100TDB IDT, Integrated Device Technology Inc
Виробник: IDT, Integrated Device Technology IncDescription: IC SRAM 256KBIT PARALLEL 28CDIP
Packaging: Bulk
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 2363.4 грн |
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Технічний опис 71256L100TDB IDT, Integrated Device Technology Inc
Description: IC SRAM 256KBIT PARALLEL 28CDIP, Packaging: Bulk, Package / Case: 28-CDIP (0.300", 7.62mm), Mounting Type: Through Hole, Memory Size: 256Kbit, Memory Type: Volatile, Operating Temperature: -55°C ~ 125°C (TA), Voltage - Supply: 4.5V ~ 5.5V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 28-CDIP, Write Cycle Time - Word, Page: 100ns, Memory Interface: Parallel, Access Time: 100 ns, Memory Organization: 32K x 8, DigiKey Programmable: Not Verified.
Інші пропозиції 71256L100TDB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| 71256L100TDB | Виробник : Renesas Electronics America Inc |
Description: IC SRAM 256KBIT PARALLEL 28CDIP Packaging: Tube Package / Case: 28-CDIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-CDIP Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товар відсутній |
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| 71256L100TDB | Виробник : IDT |
SRAM 256K(32KX8) SRAM |
товар відсутній |