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4N26(SHORT,F) Toshiba Semiconductor and Storage
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Description: OPTOISO 2.5KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 200µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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Технічний опис 4N26(SHORT,F) Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV TRANS W/BASE 6DIP, Packaging: Tube, Package / Case: 6-DIP (0.300", 7.62mm), Output Type: Transistor with Base, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 100°C, Voltage - Forward (Vf) (Typ): 1.15V, Input Type: DC, Current - Output / Channel: 100mA, Voltage - Isolation: 2500Vrms, Current Transfer Ratio (Min): 20% @ 10mA, Vce Saturation (Max): 500mV, Supplier Device Package: 6-DIP, Voltage - Output (Max): 30V, Rise / Fall Time (Typ): 2µs, 200µs, Part Status: Obsolete, Number of Channels: 1, Current - DC Forward (If) (Max): 80 mA.
Інші пропозиції 4N26(SHORT,F)
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
4N26(SHORT,F) | Виробник : Toshiba |
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