Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > 2SK3700(F)

2SK3700(F) Toshiba Semiconductor and Storage

Name: 2SK3700(F)
Brand: Toshiba Semiconductor and Storage
SKU: 2062697-3
Price: 96.86 UAH
Availability: InStock

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 5A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V

на замовлення 113 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
2+	162.34 грн
10+	129.64 грн
25+	125.45 грн
100+	96.86 грн

Мінімальне замовлення: 2

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Технічний опис 2SK3700(F) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 900V 5A TO3P, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3P(N), Part Status: Active, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V.