2SJ687-ZK-E1-AY Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: MOSFET P-CH 20V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V
Power Dissipation (Max): 1W (Ta), 36W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
на замовлення 4251 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.43 грн |
| 10+ | 144.01 грн |
| 100+ | 114.62 грн |
| 500+ | 91.02 грн |
| 1000+ | 77.23 грн |
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Технічний опис 2SJ687-ZK-E1-AY Renesas Electronics Corporation
Description: MOSFET P-CH 20V 20A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V, Power Dissipation (Max): 1W (Ta), 36W (Tc), Supplier Device Package: TO-252 (MP-3ZK), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V.
Інші пропозиції 2SJ687-ZK-E1-AY
| Фото | Назва | Виробник | Інформація |
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2SJ687-ZK-E1-AY | Виробник : Renesas Electronics Corporation |
Description: MOSFET P-CH 20V 20A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V Power Dissipation (Max): 1W (Ta), 36W (Tc) Supplier Device Package: TO-252 (MP-3ZK) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V |
товар відсутній |
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2SJ687-ZK-E1-AY | Виробник : Renesas Electronics |
MOSFET MOSFET |
товар відсутній |