Технічний опис 2SJ360(TE12L,F) Toshiba
Description: MOSFET P-CH 60V 1A PW-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 730mOhm @ 500mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: PW-MINI, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V.
Інші пропозиції 2SJ360(TE12L,F)
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
2SJ360(TE12L,F) | Виробник : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 730mOhm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PW-MINI Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V |
товар відсутній |
|
![]() |
2SJ360(TE12L,F) | Виробник : Toshiba |
![]() |
товар відсутній |
|
![]() |
2SJ360 (TE12L,F) | Виробник : Toshiba |
![]() |
товар відсутній |