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2SD2206A(T6SEP,F,M Toshiba Semiconductor and Storage
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Description: TRANS NPN 120V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 900 mW
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Технічний опис 2SD2206A(T6SEP,F,M Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 2A TO92MOD, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V, Supplier Device Package: TO-92MOD, Part Status: Obsolete, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 900 mW.
Інші пропозиції 2SD2206A(T6SEP,F,M
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
2SD2206A(T6SEP,F,M | Виробник : Toshiba |
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