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2SA965-Y,SWFF(M Toshiba Semiconductor and Storage
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Description: TRANS PNP 120V 0.8A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 900 mW
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Технічний опис 2SA965-Y,SWFF(M Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.8A TO92MOD, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V, Frequency - Transition: 120MHz, Supplier Device Package: TO-92MOD, Part Status: Obsolete, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 900 mW.
Інші пропозиції 2SA965-Y,SWFF(M
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
2SA965-Y,SWFF(M | Виробник : Toshiba |
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