2SA1955FVATPL3Z Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: TRANS PNP 12V 0.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
на замовлення 2376 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.16 грн |
| 33+ | 8.66 грн |
| 100+ | 6.22 грн |
| 500+ | 4.9 грн |
| 1000+ | 4.6 грн |
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Технічний опис 2SA1955FVATPL3Z Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V, Frequency - Transition: 130MHz, Supplier Device Package: CST3, Part Status: Obsolete, Current - Collector (Ic) (Max): 400 mA, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 100 mW.
Інші пропозиції 2SA1955FVATPL3Z
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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2SA1955FVATPL3Z | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS PNP 12V 0.4A CST3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 130MHz Supplier Device Package: CST3 Part Status: Obsolete Current - Collector (Ic) (Max): 400 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 100 mW |
товар відсутній |
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2SA1955FVATPL3Z | Виробник : Toshiba |
Bipolar Transistors - BJT PNP Trans -0.4A LN -12V VCEO |
товар відсутній |