Технічний опис 2SA1812T100Q ROHM
Description: TRANS PNP 400V 0.5A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V, Frequency - Transition: 12MHz, Supplier Device Package: MPT3, Part Status: Obsolete, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 500 mW.
Інші пропозиції 2SA1812T100Q
| Фото | Назва | Виробник | Інформація |
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2SA1812T100Q | Виробник : Rohm Semiconductor |
 Description: TRANS PNP 400V 0.5A MPT3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V Frequency - Transition: 12MHz Supplier Device Package: MPT3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 500 mW |
товар відсутній |
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2SA1812T100Q | Виробник : Rohm Semiconductor |
Description: TRANS PNP 400V 0.5A MPT3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V Frequency - Transition: 12MHz Supplier Device Package: MPT3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 500 mW |
товар відсутній |