Технічний опис 2N5551YTA ON Semiconductor
Description: TRANS NPN 160V 0.6A TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 10mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 625 mW.
Інші пропозиції 2N5551YTA
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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2N5551YTA | Виробник : onsemi |
Description: TRANS NPN 160V 0.6A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
товару немає в наявності |
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2N5551YTA | Виробник : onsemi |
Description: TRANS NPN 160V 0.6A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
товару немає в наявності |