Технічний опис 2N5307 ON Semiconductor
Description: TRANS NPN DARL 40V 1.2A TO92-3, Packaging: Tube, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2mA, 5V, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 1.2 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 625 mW.
Інші пропозиції 2N5307
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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2N5307 | Виробник : onsemi |
Description: TRANS NPN DARL 40V 1.2A TO92-3 Packaging: Tube Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
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