2301H Goford Semiconductor
Виробник: Goford SemiconductorDescription: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 890mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
на замовлення 2816 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.81 грн |
| 20+ | 14.94 грн |
| 100+ | 7.28 грн |
| 500+ | 5.7 грн |
| 1000+ | 3.96 грн |
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Технічний опис 2301H Goford Semiconductor
Description: FIXED IND 10UH 20A 5 MOHM TH, Packaging: Bulk, Tolerance: ±15%, Package / Case: Radial, Horizontal (Open), Size / Dimension: 1.280" Dia (32.51mm), Mounting Type: Through Hole, Shielding: Unshielded, Type: Toroidal, Operating Temperature: -55°C ~ 105°C, DC Resistance (DCR): 5mOhm Max, Material - Core: Iron Powder, Inductance Frequency - Test: 1 kHz, Height - Seated (Max): 0.650" (16.51mm), Inductance: 10 µH, Current Rating (Amps): 20 A.
Інші пропозиції 2301H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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2301-H | Виробник : Bourns Inc. |
Description: FIXED IND 10UH 20A 5 MOHM TH Packaging: Bulk Tolerance: ±15% Package / Case: Radial, Horizontal (Open) Size / Dimension: 1.280" Dia (32.51mm) Mounting Type: Through Hole Shielding: Unshielded Type: Toroidal Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 5mOhm Max Material - Core: Iron Powder Inductance Frequency - Test: 1 kHz Height - Seated (Max): 0.650" (16.51mm) Inductance: 10 µH Current Rating (Amps): 20 A |
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2301H | Виробник : Goford Semiconductor |
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)< Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Power Dissipation (Max): 890mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
товар відсутній |