1SS417FN2_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: SURFACE MOUNT SCHOTTKY BARRIER
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: DFN1006-2L
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
на замовлення 1449 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.78 грн |
| 30+ | 10.27 грн |
| 100+ | 4.98 грн |
| 500+ | 3.9 грн |
| 1000+ | 2.71 грн |
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Технічний опис 1SS417FN2_R1_00001 Panjit International Inc.
Description: SURFACE MOUNT SCHOTTKY BARRIER, Packaging: Tape & Reel (TR), Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Schottky, Capacitance @ Vr, F: 10pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: DFN1006-2L, Operating Temperature - Junction: -55°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA, Current - Reverse Leakage @ Vr: 5 µA @ 40 V.
Інші пропозиції 1SS417FN2_R1_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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1SS417FN2_R1_00001 | Виробник : Panjit International Inc. |
Description: SURFACE MOUNT SCHOTTKY BARRIER Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 10pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: DFN1006-2L Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
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