1SS403E,L3F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 4053 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
14+ | 22.26 грн |
21+ | 14.64 грн |
100+ | 7.16 грн |
500+ | 5.61 грн |
1000+ | 3.9 грн |
2000+ | 3.38 грн |
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Технічний опис 1SS403E,L3F Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA ESC, Packaging: Tape & Reel (TR), Package / Case: SC-79, SOD-523, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 60 ns, Technology: Standard, Capacitance @ Vr, F: 3pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: ESC, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.
Інші пропозиції 1SS403E,L3F за ціною від 2.55 грн до 24.67 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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1SS403E,L3F | Виробник : Toshiba | Diodes - General Purpose, Power, Switching SINGLE SWITCHING DIODE 200V |
на замовлення 3411 шт: термін постачання 21-30 дні (днів) |
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1SS403E,L3F | Виробник : Toshiba | Silicon Epitaxial Switching Diodes Automotive AEC-Q101 |
товару немає в наявності |
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1SS403E,L3F | Виробник : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 100MA ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: ESC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |