1SS250(TE85L,F) Toshiba
на замовлення 2274 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10+ | 32.92 грн |
15+ | 22.79 грн |
100+ | 10.02 грн |
1000+ | 6.98 грн |
3000+ | 6 грн |
9000+ | 5.29 грн |
24000+ | 5.22 грн |
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Технічний опис 1SS250(TE85L,F) Toshiba
Description: DIODE GEN PURP 200V 100MA SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 60 ns, Technology: Standard, Capacitance @ Vr, F: 3pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: SC-59, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.
Інші пропозиції 1SS250(TE85L,F)
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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1SS250(TE85L,F) | Виробник : TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 100mA; 60ns; SOT346; Ufmax: 1.2V; 150mW Power dissipation: 0.15W Case: SOT346 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 250V Features of semiconductor devices: fast switching Reverse recovery time: 60ns Max. load current: 0.3A Type of diode: switching Max. forward voltage: 1.2V Load current: 0.1A Capacitance: 3pF Max. forward impulse current: 2A кількість в упаковці: 5 шт |
товар відсутній |
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1SS250(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 100MA SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-59 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товар відсутній |
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1SS250(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 100MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-59 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товар відсутній |
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1SS250(TE85L,F) | Виробник : TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 100mA; 60ns; SOT346; Ufmax: 1.2V; 150mW Power dissipation: 0.15W Case: SOT346 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 250V Features of semiconductor devices: fast switching Reverse recovery time: 60ns Max. load current: 0.3A Type of diode: switching Max. forward voltage: 1.2V Load current: 0.1A Capacitance: 3pF Max. forward impulse current: 2A |
товар відсутній |