Технічний опис 1SS193(TE85L,F) Toshiba
Category: SMD universal diodes, Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT346; Ufmax: 1.2V; Ifsm: 2A, Power dissipation: 0.15W, Case: SOT346, Mounting: SMD, Kind of package: reel; tape, Semiconductor structure: single diode, Max. off-state voltage: 85V, Features of semiconductor devices: ultrafast switching, Reverse recovery time: 4ns, Max. load current: 0.3A, Type of diode: switching, Max. forward voltage: 1.2V, Load current: 0.1A, Capacitance: 3pF, Max. forward impulse current: 2A, кількість в упаковці: 5 шт.
Інші пропозиції 1SS193(TE85L,F)
Фото | Назва | Виробник | Інформація |
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1SS193(TE85L,F) | Виробник : TOSHIBA |
![]() Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT346; Ufmax: 1.2V; Ifsm: 2A Power dissipation: 0.15W Case: SOT346 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 85V Features of semiconductor devices: ultrafast switching Reverse recovery time: 4ns Max. load current: 0.3A Type of diode: switching Max. forward voltage: 1.2V Load current: 0.1A Capacitance: 3pF Max. forward impulse current: 2A кількість в упаковці: 5 шт |
товар відсутній |
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1SS193(TE85L,F) | Виробник : TOSHIBA |
![]() Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT346; Ufmax: 1.2V; Ifsm: 2A Power dissipation: 0.15W Case: SOT346 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 85V Features of semiconductor devices: ultrafast switching Reverse recovery time: 4ns Max. load current: 0.3A Type of diode: switching Max. forward voltage: 1.2V Load current: 0.1A Capacitance: 3pF Max. forward impulse current: 2A |
товар відсутній |