Технічний опис 1N6471E3 Microchip Technology
Description: DIODE GEN PURP 400V 400MA DO35, Packaging: Bulk, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 400mA, Supplier Device Package: DO-204AH (DO-35), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA, Current - Reverse Leakage @ Vr: 200 nA @ 400 V.
Інші пропозиції 1N6471E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| 1N647-1E3 | Виробник : Microchip Technology |
 Signal orComputer Diode |
товару немає в наявності |
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1N647-1E3 | Виробник : Microchip Technology |
Description: DIODE GEN PURP 400V 400MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 400mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 200 nA @ 400 V |
товару немає в наявності |
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1N6471E3 | Виробник : Microchip Technology |
Description: DIODE GEN PURP 400V 400MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 400mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 200 nA @ 400 V |
товару немає в наявності |
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1N647-1E3 | Виробник : Microchip Technology |
Rectifiers 400 V Signal or Computer Diode |
товару немає в наявності |
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1N6471E3 | Виробник : Microchip Technology |
ESD Protection Diodes / TVS Diodes 13.6V Lead-Free Uni-Directional TVS SMT |
товару немає в наявності |