15KP180CA MDE Semiconductor Inc
Виробник: MDE Semiconductor IncDescription: TVS DIODE BP 180VRWM 288.5VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 52.3A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 201.1V
Voltage - Clamping (Max) @ Ipp: 288.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 686.6 грн |
Відгуки про товар
Написати відгук
Технічний опис 15KP180CA MDE Semiconductor Inc
Description: TVS DIODE BP 180VRWM 288.5VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 52.3A, Voltage - Reverse Standoff (Typ): 180V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 201.1V, Voltage - Clamping (Max) @ Ipp: 288.5V, Power - Peak Pulse: 15000W (15kW), Power Line Protection: No.
Інші пропозиції 15KP180CA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
15KP180CA | Виробник : CDIL |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 201.1V; 52.3A; bidirectional; R6; 15kW; bulk Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 180V Breakdown voltage: 201.1V Max. forward impulse current: 52.3A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
товару немає в наявності |
|
|
|
15KP180CA | Виробник : CDIL |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 201.1V; 52.3A; bidirectional; R6; 15kW; bulk Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 180V Breakdown voltage: 201.1V Max. forward impulse current: 52.3A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated |
товару немає в наявності |