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PJQ5442_R2_00001 PJQ5442_R2_00001 Panjit International Inc. PJQ5442.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
товар відсутній
PJQ5442_R2_00001 PJQ5442_R2_00001 Panjit International Inc. PJQ5442.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
на замовлення 2100 шт:
термін постачання 21-31 дні (днів)
6+50.94 грн
10+ 42.32 грн
100+ 29.32 грн
500+ 22.99 грн
1000+ 19.57 грн
Мінімальне замовлення: 6
PJQ5427_R2_00001 PJQ5427_R2_00001 Panjit International Inc. Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V
товар відсутній
PJQ5427_R2_00001 PJQ5427_R2_00001 Panjit International Inc. Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V
на замовлення 1070 шт:
термін постачання 21-31 дні (днів)
3+104.16 грн
10+ 89.39 грн
100+ 69.7 грн
500+ 54.03 грн
1000+ 42.66 грн
Мінімальне замовлення: 3
PJQ5446_R2_00001 PJQ5446_R2_00001 Panjit International Inc. PJQ5446.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
товар відсутній
PJQ5446_R2_00001 PJQ5446_R2_00001 Panjit International Inc. PJQ5446.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
8+41.06 грн
10+ 34.26 грн
100+ 23.74 грн
500+ 18.61 грн
1000+ 15.84 грн
Мінімальне замовлення: 8
PJQ5446-AU_R2_000A1 PJQ5446-AU_R2_000A1 Panjit International Inc. PJQ5446-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+18.98 грн
6000+ 17.31 грн
Мінімальне замовлення: 3000
PJQ5446-AU_R2_000A1 PJQ5446-AU_R2_000A1 Panjit International Inc. PJQ5446-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8409 шт:
термін постачання 21-31 дні (днів)
7+49.42 грн
10+ 41.73 грн
100+ 28.86 грн
500+ 22.63 грн
1000+ 19.26 грн
Мінімальне замовлення: 7
PJQ5412_R2_00001 PJQ5412_R2_00001 Panjit International Inc. PJQ5412.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
товар відсутній
PJQ5412_R2_00001 PJQ5412_R2_00001 Panjit International Inc. PJQ5412.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
на замовлення 2969 шт:
термін постачання 21-31 дні (днів)
6+52.46 грн
10+ 31.26 грн
100+ 20.16 грн
500+ 14.41 грн
1000+ 12.95 грн
Мінімальне замовлення: 6
PJQ5443-AU_R2_000A1 PJQ5443-AU_R2_000A1 Panjit International Inc. PJQ5443-AU.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+22.02 грн
Мінімальне замовлення: 3000
PJQ5443-AU_R2_000A1 PJQ5443-AU_R2_000A1 Panjit International Inc. PJQ5443-AU.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8190 шт:
термін постачання 21-31 дні (днів)
6+57.78 грн
10+ 48.32 грн
100+ 33.49 грн
500+ 26.26 грн
1000+ 22.35 грн
Мінімальне замовлення: 6
PJQ5466A1_R2_00001 PJQ5466A1_R2_00001 Panjit International Inc. PJQ5466A1.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
товар відсутній
PJQ5466A1_R2_00001 PJQ5466A1_R2_00001 Panjit International Inc. PJQ5466A1.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
на замовлення 1970 шт:
термін постачання 21-31 дні (днів)
8+41.06 грн
10+ 34.26 грн
100+ 23.74 грн
500+ 18.61 грн
1000+ 15.84 грн
Мінімальне замовлення: 8
PJQ5450-AU_R2_000A1 PJQ5450-AU_R2_000A1 Panjit International Inc. PJQ5450-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PJQ5450-AU_R2_000A1 PJQ5450-AU_R2_000A1 Panjit International Inc. PJQ5450-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
8+43.34 грн
10+ 36.24 грн
100+ 25.08 грн
500+ 19.66 грн
1000+ 16.73 грн
Мінімальне замовлення: 8
PJQ5466A1-AU_R2_000A1 PJQ5466A1-AU_R2_000A1 Panjit International Inc. PJQ5466A1-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+24.74 грн
Мінімальне замовлення: 3000
PJQ5466A1-AU_R2_000A1 PJQ5466A1-AU_R2_000A1 Panjit International Inc. PJQ5466A1-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4387 шт:
термін постачання 21-31 дні (днів)
5+65.39 грн
10+ 54.32 грн
100+ 37.61 грн
500+ 29.49 грн
1000+ 25.1 грн
Мінімальне замовлення: 5
PJQ5424_R2_00001 PJQ5424_R2_00001 Panjit International Inc. PJQ5424.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2238 pF @ 25 V
товар відсутній
PJQ5424_R2_00001 PJQ5424_R2_00001 Panjit International Inc. PJQ5424.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2238 pF @ 25 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
7+47.9 грн
10+ 40.34 грн
100+ 27.92 грн
500+ 21.9 грн
1000+ 18.64 грн
Мінімальне замовлення: 7
PJQ5423_R2_00001 PJQ5423_R2_00001 Panjit International Inc. PJQ5423.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
товар відсутній
PJQ5423_R2_00001 PJQ5423_R2_00001 Panjit International Inc. PJQ5423.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
6+55.5 грн
10+ 47 грн
Мінімальне замовлення: 6
PJQ5442-AU_R2_000A1 PJQ5442-AU_R2_000A1 Panjit International Inc. PJQ5442-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 99.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PJQ5442-AU_R2_000A1 PJQ5442-AU_R2_000A1 Panjit International Inc. PJQ5442-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 99.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2285 шт:
термін постачання 21-31 дні (днів)
5+64.63 грн
10+ 51.03 грн
100+ 39.68 грн
500+ 31.56 грн
1000+ 25.71 грн
Мінімальне замовлення: 5
1N5938B_R2_00001 1N5938B_R2_00001 Panjit International Inc. 1N5921B_SERIES.pdf Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
товар відсутній
1N5938B_R2_00001 1N5938B_R2_00001 Panjit International Inc. 1N5921B_SERIES.pdf Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
товар відсутній
1.5KE20A_R2_00001 1.5KE20A_R2_00001 Panjit International Inc. 1.5KE_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-201AE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
1.5KE20A_R2_00001 1.5KE20A_R2_00001 Panjit International Inc. 1.5KE_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-201AE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
SB150_R2_00001 SB150_R2_00001 Panjit International Inc. SB120_SERIES.pdf Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
товар відсутній
SB150_R2_00001 SB150_R2_00001 Panjit International Inc. SB120_SERIES.pdf Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
товар відсутній
PCDB10120G1_T0_00001 PCDB10120G1_T0_00001 Panjit International Inc. PCDB10120G1.pdf Description: DIODE SIL CARB 1.2KV 10A TO263
товар відсутній
PCDB10120G1_T0_00001 PCDB10120G1_T0_00001 Panjit International Inc. PCDB10120G1.pdf Description: DIODE SIL CARB 1.2KV 10A TO263
товар відсутній
P6SMBJ7.5A_R1_00001 P6SMBJ7.5A_R1_00001 Panjit International Inc. P6SMBJ_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
P6SMBJ7.5A_R1_00001 P6SMBJ7.5A_R1_00001 Panjit International Inc. P6SMBJ_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 685 шт:
термін постачання 21-31 дні (днів)
8+41.06 грн
10+ 34.04 грн
100+ 23.69 грн
Мінімальне замовлення: 8
MB110_R1_00001 MB110_R1_00001 Panjit International Inc. MB14_SERIES.pdf Description: DIODE SCHOTTKY 100V 1A SMB
товар відсутній
MB110_R1_00001 MB110_R1_00001 Panjit International Inc. MB14_SERIES.pdf Description: DIODE SCHOTTKY 100V 1A SMB
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
9+34.97 грн
11+ 26.87 грн
100+ 18.3 грн
Мінімальне замовлення: 9
ERT3DAF_R1_00001 ERT3DAF_R1_00001 Panjit International Inc. ERT3AAF_SERIES.pdf Description: DIODE GEN PURP 200V 3A SMBF
товар відсутній
ERT3DAF_R1_00001 ERT3DAF_R1_00001 Panjit International Inc. ERT3AAF_SERIES.pdf Description: DIODE GEN PURP 200V 3A SMBF
товар відсутній
AZ23C51_R1_00001 AZ23C51_R1_00001 Panjit International Inc. AZ23C2V4_SERIES.pdf Description: DUAL SURFACE MOUNT ZENER DIODES
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+3.57 грн
6000+ 2.99 грн
15000+ 2.54 грн
Мінімальне замовлення: 3000
AZ23C51_R1_00001 AZ23C51_R1_00001 Panjit International Inc. AZ23C2V4_SERIES.pdf Description: DUAL SURFACE MOUNT ZENER DIODES
на замовлення 17884 шт:
термін постачання 21-31 дні (днів)
15+20.53 грн
19+ 16.11 грн
100+ 8.53 грн
500+ 5.26 грн
1000+ 3.58 грн
Мінімальне замовлення: 15
PJD60R390E_L2_00001 PJD60R390E_L2_00001 Panjit International Inc. PJx60R390E.pdf Description: 600V N-CHANNEL SUPER JUNCTION MO
товар відсутній
PJD60R390E_L2_00001 PJD60R390E_L2_00001 Panjit International Inc. PJx60R390E.pdf Description: 600V N-CHANNEL SUPER JUNCTION MO
товар відсутній
PJF60R390E_T0_00001 PJF60R390E_T0_00001 Panjit International Inc. PJx60R390E.pdf Description: 600V N-CHANNEL SUPER JUNCTION MO
товар відсутній
PBHV8110DW_R2_00001 PBHV8110DW_R2_00001 Panjit International Inc. PBHV8110DW.pdf Description: TRANS NPN 100V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
товар відсутній
PBHV8110DW_R2_00001 PBHV8110DW_R2_00001 Panjit International Inc. PBHV8110DW.pdf Description: TRANS NPN 100V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
на замовлення 520 шт:
термін постачання 21-31 дні (днів)
10+32.69 грн
13+ 23.43 грн
100+ 14.61 грн
500+ 9.38 грн
Мінімальне замовлення: 10
PBHV8110DA_R1_00001 PBHV8110DA_R1_00001 Panjit International Inc. PBHV8110DA.pdf Description: TRANS NPN 100V 1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
товар відсутній
PBHV8110DA_R1_00001 PBHV8110DA_R1_00001 Panjit International Inc. PBHV8110DA.pdf Description: TRANS NPN 100V 1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
на замовлення 2376 шт:
термін постачання 21-31 дні (днів)
10+32.69 грн
13+ 23.21 грн
100+ 13.16 грн
500+ 8.17 грн
1000+ 6.27 грн
Мінімальне замовлення: 10
PBHV8110DW-AU_R2_000A1 PBHV8110DW-AU_R2_000A1 Panjit International Inc. PBHV8110DW-AU.pdf Description: TRANS NPN 100V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+7.46 грн
Мінімальне замовлення: 2500
PBHV8110DW-AU_R2_000A1 PBHV8110DW-AU_R2_000A1 Panjit International Inc. PBHV8110DW-AU.pdf Description: TRANS NPN 100V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
10+33.45 грн
13+ 24.38 грн
100+ 15.17 грн
500+ 9.74 грн
1000+ 7.49 грн
Мінімальне замовлення: 10
B108S_R2_00001 B108S_R2_00001 Panjit International Inc. B1005S_SERIES.pdf Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+7.74 грн
Мінімальне замовлення: 3000
B108S_R2_00001 B108S_R2_00001 Panjit International Inc. B1005S_SERIES.pdf Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
9+34.97 грн
13+ 23.94 грн
100+ 12.08 грн
500+ 10.05 грн
1000+ 7.82 грн
Мінімальне замовлення: 9
B1010S_R2_00001 B1010S_R2_00001 Panjit International Inc. B1005S_SERIES.pdf Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
B1010S_R2_00001 B1010S_R2_00001 Panjit International Inc. B1005S_SERIES.pdf Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2590 шт:
термін постачання 21-31 дні (днів)
8+38.02 грн
11+ 27.31 грн
100+ 17.02 грн
500+ 10.93 грн
1000+ 8.41 грн
Мінімальне замовлення: 8
B106S_R2_00001 B106S_R2_00001 Panjit International Inc. B1005S_SERIES.pdf Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
B106S_R2_00001 B106S_R2_00001 Panjit International Inc. B1005S_SERIES.pdf Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 2897 шт:
термін постачання 21-31 дні (днів)
9+34.21 грн
13+ 23.36 грн
100+ 11.76 грн
500+ 9.78 грн
1000+ 7.61 грн
Мінімальне замовлення: 9
B10S_R2_00001 B10S_R2_00001 Panjit International Inc. B1S_SERIES.pdf Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
B10S_R2_00001 B10S_R2_00001 Panjit International Inc. B1S_SERIES.pdf Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1998 шт:
термін постачання 21-31 дні (днів)
8+40.3 грн
13+ 23.87 грн
100+ 15.23 грн
500+ 10.77 грн
1000+ 9.64 грн
Мінімальне замовлення: 8
P6SMBJ9.0CA_R1_00001 P6SMBJ9.0CA_R1_00001 Panjit International Inc. P6SMBJ_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+11.53 грн
Мінімальне замовлення: 800
P6SMBJ9.0CA_R1_00001 P6SMBJ9.0CA_R1_00001 Panjit International Inc. P6SMBJ_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
11+28.13 грн
14+ 21.74 грн
100+ 14.8 грн
Мінімальне замовлення: 11
P6SMBJ17CA_R1_00001 P6SMBJ17CA_R1_00001 Panjit International Inc. P6SMBJ_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
PJQ5442_R2_00001 PJQ5442.pdf
PJQ5442_R2_00001
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
товар відсутній
PJQ5442_R2_00001 PJQ5442.pdf
PJQ5442_R2_00001
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
на замовлення 2100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+50.94 грн
10+ 42.32 грн
100+ 29.32 грн
500+ 22.99 грн
1000+ 19.57 грн
Мінімальне замовлення: 6
PJQ5427_R2_00001
PJQ5427_R2_00001
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V
товар відсутній
PJQ5427_R2_00001
PJQ5427_R2_00001
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V
на замовлення 1070 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+104.16 грн
10+ 89.39 грн
100+ 69.7 грн
500+ 54.03 грн
1000+ 42.66 грн
Мінімальне замовлення: 3
PJQ5446_R2_00001 PJQ5446.pdf
PJQ5446_R2_00001
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
товар відсутній
PJQ5446_R2_00001 PJQ5446.pdf
PJQ5446_R2_00001
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+41.06 грн
10+ 34.26 грн
100+ 23.74 грн
500+ 18.61 грн
1000+ 15.84 грн
Мінімальне замовлення: 8
PJQ5446-AU_R2_000A1 PJQ5446-AU.pdf
PJQ5446-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+18.98 грн
6000+ 17.31 грн
Мінімальне замовлення: 3000
PJQ5446-AU_R2_000A1 PJQ5446-AU.pdf
PJQ5446-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8409 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+49.42 грн
10+ 41.73 грн
100+ 28.86 грн
500+ 22.63 грн
1000+ 19.26 грн
Мінімальне замовлення: 7
PJQ5412_R2_00001 PJQ5412.pdf
PJQ5412_R2_00001
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
товар відсутній
PJQ5412_R2_00001 PJQ5412.pdf
PJQ5412_R2_00001
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
на замовлення 2969 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+52.46 грн
10+ 31.26 грн
100+ 20.16 грн
500+ 14.41 грн
1000+ 12.95 грн
Мінімальне замовлення: 6
PJQ5443-AU_R2_000A1 PJQ5443-AU.pdf
PJQ5443-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+22.02 грн
Мінімальне замовлення: 3000
PJQ5443-AU_R2_000A1 PJQ5443-AU.pdf
PJQ5443-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8190 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+57.78 грн
10+ 48.32 грн
100+ 33.49 грн
500+ 26.26 грн
1000+ 22.35 грн
Мінімальне замовлення: 6
PJQ5466A1_R2_00001 PJQ5466A1.pdf
PJQ5466A1_R2_00001
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
товар відсутній
PJQ5466A1_R2_00001 PJQ5466A1.pdf
PJQ5466A1_R2_00001
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
на замовлення 1970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+41.06 грн
10+ 34.26 грн
100+ 23.74 грн
500+ 18.61 грн
1000+ 15.84 грн
Мінімальне замовлення: 8
PJQ5450-AU_R2_000A1 PJQ5450-AU.pdf
PJQ5450-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PJQ5450-AU_R2_000A1 PJQ5450-AU.pdf
PJQ5450-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+43.34 грн
10+ 36.24 грн
100+ 25.08 грн
500+ 19.66 грн
1000+ 16.73 грн
Мінімальне замовлення: 8
PJQ5466A1-AU_R2_000A1 PJQ5466A1-AU.pdf
PJQ5466A1-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+24.74 грн
Мінімальне замовлення: 3000
PJQ5466A1-AU_R2_000A1 PJQ5466A1-AU.pdf
PJQ5466A1-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4387 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+65.39 грн
10+ 54.32 грн
100+ 37.61 грн
500+ 29.49 грн
1000+ 25.1 грн
Мінімальне замовлення: 5
PJQ5424_R2_00001 PJQ5424.pdf
PJQ5424_R2_00001
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2238 pF @ 25 V
товар відсутній
PJQ5424_R2_00001 PJQ5424.pdf
PJQ5424_R2_00001
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2238 pF @ 25 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+47.9 грн
10+ 40.34 грн
100+ 27.92 грн
500+ 21.9 грн
1000+ 18.64 грн
Мінімальне замовлення: 7
PJQ5423_R2_00001 PJQ5423.pdf
PJQ5423_R2_00001
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
товар відсутній
PJQ5423_R2_00001 PJQ5423.pdf
PJQ5423_R2_00001
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+55.5 грн
10+ 47 грн
Мінімальне замовлення: 6
PJQ5442-AU_R2_000A1 PJQ5442-AU.pdf
PJQ5442-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 99.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PJQ5442-AU_R2_000A1 PJQ5442-AU.pdf
PJQ5442-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 99.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2285 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+64.63 грн
10+ 51.03 грн
100+ 39.68 грн
500+ 31.56 грн
1000+ 25.71 грн
Мінімальне замовлення: 5
1N5938B_R2_00001 1N5921B_SERIES.pdf
1N5938B_R2_00001
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
товар відсутній
1N5938B_R2_00001 1N5921B_SERIES.pdf
1N5938B_R2_00001
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
товар відсутній
1.5KE20A_R2_00001 1.5KE_SERIES.pdf
1.5KE20A_R2_00001
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-201AE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
1.5KE20A_R2_00001 1.5KE_SERIES.pdf
1.5KE20A_R2_00001
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-201AE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
SB150_R2_00001 SB120_SERIES.pdf
SB150_R2_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
товар відсутній
SB150_R2_00001 SB120_SERIES.pdf
SB150_R2_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
товар відсутній
PCDB10120G1_T0_00001 PCDB10120G1.pdf
PCDB10120G1_T0_00001
Виробник: Panjit International Inc.
Description: DIODE SIL CARB 1.2KV 10A TO263
товар відсутній
PCDB10120G1_T0_00001 PCDB10120G1.pdf
PCDB10120G1_T0_00001
Виробник: Panjit International Inc.
Description: DIODE SIL CARB 1.2KV 10A TO263
товар відсутній
P6SMBJ7.5A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.5A_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
P6SMBJ7.5A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.5A_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 685 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+41.06 грн
10+ 34.04 грн
100+ 23.69 грн
Мінімальне замовлення: 8
MB110_R1_00001 MB14_SERIES.pdf
MB110_R1_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 100V 1A SMB
товар відсутній
MB110_R1_00001 MB14_SERIES.pdf
MB110_R1_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 100V 1A SMB
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+34.97 грн
11+ 26.87 грн
100+ 18.3 грн
Мінімальне замовлення: 9
ERT3DAF_R1_00001 ERT3AAF_SERIES.pdf
ERT3DAF_R1_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 200V 3A SMBF
товар відсутній
ERT3DAF_R1_00001 ERT3AAF_SERIES.pdf
ERT3DAF_R1_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 200V 3A SMBF
товар відсутній
AZ23C51_R1_00001 AZ23C2V4_SERIES.pdf
AZ23C51_R1_00001
Виробник: Panjit International Inc.
Description: DUAL SURFACE MOUNT ZENER DIODES
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+3.57 грн
6000+ 2.99 грн
15000+ 2.54 грн
Мінімальне замовлення: 3000
AZ23C51_R1_00001 AZ23C2V4_SERIES.pdf
AZ23C51_R1_00001
Виробник: Panjit International Inc.
Description: DUAL SURFACE MOUNT ZENER DIODES
на замовлення 17884 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
15+20.53 грн
19+ 16.11 грн
100+ 8.53 грн
500+ 5.26 грн
1000+ 3.58 грн
Мінімальне замовлення: 15
PJD60R390E_L2_00001 PJx60R390E.pdf
PJD60R390E_L2_00001
Виробник: Panjit International Inc.
Description: 600V N-CHANNEL SUPER JUNCTION MO
товар відсутній
PJD60R390E_L2_00001 PJx60R390E.pdf
PJD60R390E_L2_00001
Виробник: Panjit International Inc.
Description: 600V N-CHANNEL SUPER JUNCTION MO
товар відсутній
PJF60R390E_T0_00001 PJx60R390E.pdf
PJF60R390E_T0_00001
Виробник: Panjit International Inc.
Description: 600V N-CHANNEL SUPER JUNCTION MO
товар відсутній
PBHV8110DW_R2_00001 PBHV8110DW.pdf
PBHV8110DW_R2_00001
Виробник: Panjit International Inc.
Description: TRANS NPN 100V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
товар відсутній
PBHV8110DW_R2_00001 PBHV8110DW.pdf
PBHV8110DW_R2_00001
Виробник: Panjit International Inc.
Description: TRANS NPN 100V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
на замовлення 520 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+32.69 грн
13+ 23.43 грн
100+ 14.61 грн
500+ 9.38 грн
Мінімальне замовлення: 10
PBHV8110DA_R1_00001 PBHV8110DA.pdf
PBHV8110DA_R1_00001
Виробник: Panjit International Inc.
Description: TRANS NPN 100V 1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
товар відсутній
PBHV8110DA_R1_00001 PBHV8110DA.pdf
PBHV8110DA_R1_00001
Виробник: Panjit International Inc.
Description: TRANS NPN 100V 1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
на замовлення 2376 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+32.69 грн
13+ 23.21 грн
100+ 13.16 грн
500+ 8.17 грн
1000+ 6.27 грн
Мінімальне замовлення: 10
PBHV8110DW-AU_R2_000A1 PBHV8110DW-AU.pdf
PBHV8110DW-AU_R2_000A1
Виробник: Panjit International Inc.
Description: TRANS NPN 100V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+7.46 грн
Мінімальне замовлення: 2500
PBHV8110DW-AU_R2_000A1 PBHV8110DW-AU.pdf
PBHV8110DW-AU_R2_000A1
Виробник: Panjit International Inc.
Description: TRANS NPN 100V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.6 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+33.45 грн
13+ 24.38 грн
100+ 15.17 грн
500+ 9.74 грн
1000+ 7.49 грн
Мінімальне замовлення: 10
B108S_R2_00001 B1005S_SERIES.pdf
B108S_R2_00001
Виробник: Panjit International Inc.
Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+7.74 грн
Мінімальне замовлення: 3000
B108S_R2_00001 B1005S_SERIES.pdf
B108S_R2_00001
Виробник: Panjit International Inc.
Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+34.97 грн
13+ 23.94 грн
100+ 12.08 грн
500+ 10.05 грн
1000+ 7.82 грн
Мінімальне замовлення: 9
B1010S_R2_00001 B1005S_SERIES.pdf
B1010S_R2_00001
Виробник: Panjit International Inc.
Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
B1010S_R2_00001 B1005S_SERIES.pdf
B1010S_R2_00001
Виробник: Panjit International Inc.
Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2590 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+38.02 грн
11+ 27.31 грн
100+ 17.02 грн
500+ 10.93 грн
1000+ 8.41 грн
Мінімальне замовлення: 8
B106S_R2_00001 B1005S_SERIES.pdf
B106S_R2_00001
Виробник: Panjit International Inc.
Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
B106S_R2_00001 B1005S_SERIES.pdf
B106S_R2_00001
Виробник: Panjit International Inc.
Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 2897 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+34.21 грн
13+ 23.36 грн
100+ 11.76 грн
500+ 9.78 грн
1000+ 7.61 грн
Мінімальне замовлення: 9
B10S_R2_00001 B1S_SERIES.pdf
B10S_R2_00001
Виробник: Panjit International Inc.
Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
B10S_R2_00001 B1S_SERIES.pdf
B10S_R2_00001
Виробник: Panjit International Inc.
Description: MINI SURFACE MOUNT GLASS PASSIVA
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MDI
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+40.3 грн
13+ 23.87 грн
100+ 15.23 грн
500+ 10.77 грн
1000+ 9.64 грн
Мінімальне замовлення: 8
P6SMBJ9.0CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ9.0CA_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+11.53 грн
Мінімальне замовлення: 800
P6SMBJ9.0CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ9.0CA_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+28.13 грн
14+ 21.74 грн
100+ 14.8 грн
Мінімальне замовлення: 11
P6SMBJ17CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ17CA_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
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