Продукція > PANJIT INTERNATIONAL INC. > Всі товари виробника PANJIT INTERNATIONAL INC. (11253) > Сторінка 136 з 188
Фото | Назва | Виробник | Інформація |
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ER502_R2_00001 | Panjit International Inc. |
Description: DIODE GEN PURP 200V 5A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 1583 шт: термін постачання 21-31 дні (днів) |
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MER502T_T0_00601 | Panjit International Inc. |
Description: DIODE GEN PURP 200V 5A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 51pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 1899 шт: термін постачання 21-31 дні (днів) |
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MER502FT_T0_00601 | Panjit International Inc. |
Description: DIODE GEN PURP 200V 5A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 51pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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ER501_R2_00001 | Panjit International Inc. | Description: DIODE GEN PURP 100V 5A DO201AD |
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ER501_R2_00001 | Panjit International Inc. | Description: DIODE GEN PURP 100V 5A DO201AD |
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ER500_R2_00001 | Panjit International Inc. |
Description: DIODE GEN PURP 50V 5A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V |
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ER500_R2_00001 | Panjit International Inc. |
Description: DIODE GEN PURP 50V 5A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V |
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ER501A_R2_00001 | Panjit International Inc. | Description: DIODE GEN PURP 150V 5A DO201AD |
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ER501A_R2_00001 | Panjit International Inc. | Description: DIODE GEN PURP 150V 5A DO201AD |
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PZS5136BAS-AU_R1_000A1 | Panjit International Inc. |
Description: SILICON ZENER DIODE Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V Grade: Automotive Qualification: AEC-Q101 |
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PZS5136BAS-AU_R1_000A1 | Panjit International Inc. |
Description: SILICON ZENER DIODE Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V Grade: Automotive Qualification: AEC-Q101 |
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PZS5136BCH_R1_00001 | Panjit International Inc. |
Description: SILICON ZENER DIODE Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Supplier Device Package: SOD-323HE Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V |
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PZS5136BCH_R1_00001 | Panjit International Inc. |
Description: SILICON ZENER DIODE Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Supplier Device Package: SOD-323HE Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V |
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PZS5136BCH-AU_R1_000A1 | Panjit International Inc. |
Description: SILICON ZENER DIODE Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Supplier Device Package: SOD-323HE Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V Grade: Automotive Qualification: AEC-Q101 |
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PZS5136BCH-AU_R1_000A1 | Panjit International Inc. |
Description: SILICON ZENER DIODE Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Supplier Device Package: SOD-323HE Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V Grade: Automotive Qualification: AEC-Q101 |
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PZS1136BES_R1_00001 | Panjit International Inc. |
Description: SILICON ZENER DIODE Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Supplier Device Package: SOD-523 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V |
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PZS1136BES_R1_00001 | Panjit International Inc. |
Description: SILICON ZENER DIODE Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Supplier Device Package: SOD-523 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V |
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PZS5136BAS_R1_00001 | Panjit International Inc. |
Description: SILICON ZENER DIODE Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V |
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PZS5136BAS_R1_00001 | Panjit International Inc. |
Description: SILICON ZENER DIODE Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V |
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1SMA4752-AU_R2_000A1 | Panjit International Inc. | Description: SURFACE MOUNT SILICON ZENER DIOD |
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1SMA4752-AU_R2_000A1 | Panjit International Inc. | Description: SURFACE MOUNT SILICON ZENER DIOD |
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P4HE5.0A_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT TRANSIENT VOLTAGE Packaging: Tape & Reel (TR) Package / Case: SOD-123H Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 43.5A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOD-123HE Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
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P4HE5.0A_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT TRANSIENT VOLTAGE Packaging: Cut Tape (CT) Package / Case: SOD-123H Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 43.5A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOD-123HE Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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P4FL5.0A-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT TRANSIENT VOLTAGE Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 43.5A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOD-123FL Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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P4FL5.0A-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT TRANSIENT VOLTAGE Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 43.5A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOD-123FL Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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P4HE5.0A-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT TRANSIENT VOLTAGE Packaging: Tape & Reel (TR) Package / Case: SOD-123H Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 43.5A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOD-123HE Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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P4HE5.0A-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT TRANSIENT VOLTAGE Packaging: Cut Tape (CT) Package / Case: SOD-123H Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 43.5A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOD-123HE Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BR34_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 40V 3A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
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BR34_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 40V 3A SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
на замовлення 790 шт: термін постачання 21-31 дні (днів) |
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1.5SMC43CA_R1_00001 | Panjit International Inc. | Description: GLASS PASSIVATED JUNCTION TRANSI |
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1.5SMC43CA_R1_00001 | Panjit International Inc. | Description: GLASS PASSIVATED JUNCTION TRANSI |
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1.5SMC43CA-AU_R1_000A1 | Panjit International Inc. | Description: GLASS PASSIVATED JUNCTION TRANSI |
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1.5SMC43CA-AU_R1_000A1 | Panjit International Inc. | Description: GLASS PASSIVATED JUNCTION TRANSI |
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1.5SMC75CA_R1_00001 | Panjit International Inc. | Description: GLASS PASSIVATED JUNCTION TRANSI |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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1.5SMC75CA_R1_00001 | Panjit International Inc. | Description: GLASS PASSIVATED JUNCTION TRANSI |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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1.5SMC75CA-AU_R1_000A1 | Panjit International Inc. | Description: GLASS PASSIVATED JUNCTION TRANSI |
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1.5SMC75CA-AU_R1_000A1 | Panjit International Inc. | Description: GLASS PASSIVATED JUNCTION TRANSI |
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UF2006FCT_T0_00001 | Panjit International Inc. |
Description: ULTRA FAST RECOVERY RECTIFIERS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 1980 шт: термін постачання 21-31 дні (днів) |
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ED604CS_S2_00001 | Panjit International Inc. | Description: SUPERFAST RECOVERY RECTIFIERS |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ED604CS_S2_00001 | Panjit International Inc. | Description: SUPERFAST RECOVERY RECTIFIERS |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ED602CS_L2_00001 | Panjit International Inc. | Description: SUPERFAST RECOVERY RECTIFIERS |
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ED602CS_L2_00001 | Panjit International Inc. | Description: SUPERFAST RECOVERY RECTIFIERS |
на замовлення 2960 шт: термін постачання 21-31 дні (днів) |
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ED606CS_S2_00001 | Panjit International Inc. | Description: SUPERFAST RECOVERY RECTIFIERS |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ED606CS_S2_00001 | Panjit International Inc. | Description: SUPERFAST RECOVERY RECTIFIERS |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ED606CS_L2_00001 | Panjit International Inc. | Description: SUPERFAST RECOVERY RECTIFIERS |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ED606CS_L2_00001 | Panjit International Inc. | Description: SUPERFAST RECOVERY RECTIFIERS |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ED604CS_L2_00001 | Panjit International Inc. | Description: SUPERFAST RECOVERY RECTIFIERS |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ED604CS_L2_00001 | Panjit International Inc. | Description: SUPERFAST RECOVERY RECTIFIERS |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ED602CS_S2_00001 | Panjit International Inc. | Description: SUPERFAST RECOVERY RECTIFIERS |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ED602CS_S2_00001 | Panjit International Inc. | Description: SUPERFAST RECOVERY RECTIFIERS |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJQ5410_R2_00001 | Panjit International Inc. |
Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V |
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PJQ5410_R2_00001 | Panjit International Inc. |
Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V |
на замовлення 1544 шт: термін постачання 21-31 дні (днів) |
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PJQ5468A_R2_00001 | Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V |
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PJQ5468A_R2_00001 | Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V |
на замовлення 2946 шт: термін постачання 21-31 дні (днів) |
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PJQ5466A-AU_R2_000A1 | Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V Power Dissipation (Max): 2.4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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PJQ5466A-AU_R2_000A1 | Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V Power Dissipation (Max): 2.4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2906 шт: термін постачання 21-31 дні (днів) |
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PJQ5442_R2_00001 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V |
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PJQ5442_R2_00001 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V |
на замовлення 2100 шт: термін постачання 21-31 дні (днів) |
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PJQ5427_R2_00001 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V |
товар відсутній |
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PJQ5427_R2_00001 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V |
на замовлення 1070 шт: термін постачання 21-31 дні (днів) |
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ER502_R2_00001 |
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 200V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 1583 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.57 грн |
13+ | 24.5 грн |
100+ | 17.01 грн |
500+ | 12.46 грн |
MER502T_T0_00601 |
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 51pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 51pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 1899 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 60.69 грн |
10+ | 50.8 грн |
100+ | 35.16 грн |
500+ | 27.58 грн |
1000+ | 23.47 грн |
MER502FT_T0_00601 |
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 200V 5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 51pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 51pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 60.69 грн |
10+ | 50.65 грн |
100+ | 35.08 грн |
500+ | 27.51 грн |
1000+ | 23.41 грн |
2000+ | 20.85 грн |
ER501_R2_00001 |
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 100V 5A DO201AD
Description: DIODE GEN PURP 100V 5A DO201AD
товар відсутній
ER501_R2_00001 |
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 100V 5A DO201AD
Description: DIODE GEN PURP 100V 5A DO201AD
товар відсутній
ER500_R2_00001 |
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 50V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Description: DIODE GEN PURP 50V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товар відсутній
ER500_R2_00001 |
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 50V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Description: DIODE GEN PURP 50V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товар відсутній
ER501A_R2_00001 |
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 150V 5A DO201AD
Description: DIODE GEN PURP 150V 5A DO201AD
товар відсутній
ER501A_R2_00001 |
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 150V 5A DO201AD
Description: DIODE GEN PURP 150V 5A DO201AD
товар відсутній
PZS5136BAS-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Grade: Automotive
Qualification: AEC-Q101
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PZS5136BAS-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Grade: Automotive
Qualification: AEC-Q101
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PZS5136BCH_R1_00001 |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-323HE
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-323HE
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
товар відсутній
PZS5136BCH_R1_00001 |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-323HE
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-323HE
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
товар відсутній
PZS5136BCH-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-323HE
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Grade: Automotive
Qualification: AEC-Q101
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-323HE
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PZS5136BCH-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-323HE
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Grade: Automotive
Qualification: AEC-Q101
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-323HE
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PZS1136BES_R1_00001 |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-523
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-523
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
товар відсутній
PZS1136BES_R1_00001 |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-523
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-523
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
товар відсутній
PZS5136BAS_R1_00001 |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
товар відсутній
PZS5136BAS_R1_00001 |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
товар відсутній
1SMA4752-AU_R2_000A1 |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Description: SURFACE MOUNT SILICON ZENER DIOD
товар відсутній
1SMA4752-AU_R2_000A1 |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Description: SURFACE MOUNT SILICON ZENER DIOD
товар відсутній
P4HE5.0A_R1_00001 |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123HE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123HE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
P4HE5.0A_R1_00001 |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123HE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123HE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.02 грн |
15+ | 20.68 грн |
100+ | 13.1 грн |
500+ | 9.22 грн |
1000+ | 8.23 грн |
P4FL5.0A-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 11 грн |
P4FL5.0A-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.91 грн |
10+ | 30.12 грн |
100+ | 20.54 грн |
500+ | 14.45 грн |
1000+ | 10.84 грн |
P4HE5.0A-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123HE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123HE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.82 грн |
P4HE5.0A-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123HE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123HE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 50.58 грн |
BR34_R1_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
товар відсутній
BR34_R1_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 790 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 28.01 грн |
15+ | 20.98 грн |
100+ | 12.56 грн |
1.5SMC43CA_R1_00001 |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Description: GLASS PASSIVATED JUNCTION TRANSI
товар відсутній
1.5SMC43CA_R1_00001 |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Description: GLASS PASSIVATED JUNCTION TRANSI
товар відсутній
1.5SMC43CA-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Description: GLASS PASSIVATED JUNCTION TRANSI
товар відсутній
1.5SMC43CA-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Description: GLASS PASSIVATED JUNCTION TRANSI
товар відсутній
1.5SMC75CA_R1_00001 |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Description: GLASS PASSIVATED JUNCTION TRANSI
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 25.54 грн |
1.5SMC75CA_R1_00001 |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Description: GLASS PASSIVATED JUNCTION TRANSI
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 48.24 грн |
10+ | 40.61 грн |
100+ | 31.11 грн |
1.5SMC75CA-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Description: GLASS PASSIVATED JUNCTION TRANSI
товар відсутній
1.5SMC75CA-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Description: GLASS PASSIVATED JUNCTION TRANSI
товар відсутній
UF2006FCT_T0_00001 |
Виробник: Panjit International Inc.
Description: ULTRA FAST RECOVERY RECTIFIERS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: ULTRA FAST RECOVERY RECTIFIERS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 161.07 грн |
50+ | 75.72 грн |
100+ | 67.95 грн |
500+ | 50.95 грн |
1000+ | 46.82 грн |
ED604CS_S2_00001 |
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Description: SUPERFAST RECOVERY RECTIFIERS
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 27.33 грн |
ED604CS_S2_00001 |
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Description: SUPERFAST RECOVERY RECTIFIERS
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.81 грн |
10+ | 59.87 грн |
100+ | 45.92 грн |
500+ | 34.07 грн |
1000+ | 27.25 грн |
ED602CS_L2_00001 |
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Description: SUPERFAST RECOVERY RECTIFIERS
товар відсутній
ED602CS_L2_00001 |
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Description: SUPERFAST RECOVERY RECTIFIERS
на замовлення 2960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.81 грн |
10+ | 59.87 грн |
100+ | 45.92 грн |
500+ | 34.07 грн |
1000+ | 27.25 грн |
ED606CS_S2_00001 |
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Description: SUPERFAST RECOVERY RECTIFIERS
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 28.21 грн |
ED606CS_S2_00001 |
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Description: SUPERFAST RECOVERY RECTIFIERS
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 72.37 грн |
10+ | 61.89 грн |
100+ | 47.4 грн |
500+ | 35.17 грн |
1000+ | 28.13 грн |
ED606CS_L2_00001 |
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Description: SUPERFAST RECOVERY RECTIFIERS
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 28.21 грн |
ED606CS_L2_00001 |
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Description: SUPERFAST RECOVERY RECTIFIERS
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 72.37 грн |
10+ | 61.89 грн |
100+ | 47.4 грн |
500+ | 35.17 грн |
1000+ | 28.13 грн |
ED604CS_L2_00001 |
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Description: SUPERFAST RECOVERY RECTIFIERS
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 27.33 грн |
ED604CS_L2_00001 |
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Description: SUPERFAST RECOVERY RECTIFIERS
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.81 грн |
10+ | 59.87 грн |
100+ | 45.92 грн |
500+ | 34.07 грн |
1000+ | 27.25 грн |
ED602CS_S2_00001 |
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Description: SUPERFAST RECOVERY RECTIFIERS
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 27.33 грн |
ED602CS_S2_00001 |
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Description: SUPERFAST RECOVERY RECTIFIERS
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.81 грн |
10+ | 59.87 грн |
100+ | 45.92 грн |
500+ | 34.07 грн |
1000+ | 27.25 грн |
PJQ5410_R2_00001 |
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
товар відсутній
PJQ5410_R2_00001 |
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
на замовлення 1544 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 65.36 грн |
10+ | 39.34 грн |
100+ | 25.63 грн |
500+ | 18.49 грн |
1000+ | 16.7 грн |
PJQ5468A_R2_00001 |
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
товар відсутній
PJQ5468A_R2_00001 |
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.03 грн |
10+ | 54.85 грн |
100+ | 42.64 грн |
500+ | 33.92 грн |
1000+ | 27.63 грн |
PJQ5466A-AU_R2_000A1 |
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
Power Dissipation (Max): 2.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
Power Dissipation (Max): 2.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PJQ5466A-AU_R2_000A1 |
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
Power Dissipation (Max): 2.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
Power Dissipation (Max): 2.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2906 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 55.25 грн |
10+ | 46.16 грн |
100+ | 31.98 грн |
500+ | 25.08 грн |
1000+ | 21.34 грн |
PJQ5442_R2_00001 |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
товар відсутній
PJQ5442_R2_00001 |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
на замовлення 2100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 52.13 грн |
10+ | 43.31 грн |
100+ | 30.01 грн |
500+ | 23.53 грн |
1000+ | 20.03 грн |
PJQ5427_R2_00001 |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V
товар відсутній
PJQ5427_R2_00001 |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V
на замовлення 1070 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.6 грн |
10+ | 91.49 грн |
100+ | 71.33 грн |
500+ | 55.3 грн |
1000+ | 43.66 грн |