Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
FQP9N25CTSTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V |
товар відсутній |
|||||||||||||
QSB34 | onsemi |
![]() Packaging: Bulk Package / Case: Axial Wavelength: 940nm Mounting Type: Through Hole Diode Type: Pin Operating Temperature: -25°C ~ 85°C Response Time: 50ns Viewing Angle: 120° Spectral Range: 730nm ~ 1100nm Active Area: 6.5mm² Current - Dark (Typ): 30nA Voltage - DC Reverse (Vr) (Max): 32 V |
товар відсутній |
||||||||||||||
![]() |
FQD20N06LTF | onsemi |
Description: MOSFET N-CH 60V 17.2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
HUFA76407D3ST | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 92mOhm @ 13A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
HUFA75307D3ST | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
FQPF17N08L | onsemi |
![]() |
товар відсутній |
|||||||||||||
![]() |
KSA1010OTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 3A, 5V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.5 W |
товар відсутній |
|||||||||||||
![]() |
KSA1010RTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 5V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.5 W |
товар відсутній |
|||||||||||||
![]() |
KSA1010Y | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 5V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.5 W |
товар відсутній |
|||||||||||||
![]() |
FQB7N10LTM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 3.65A, 10V Power Dissipation (Max): 3.75W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
FQB20N06LTM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 10.5A, 10V Power Dissipation (Max): 3.75W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
FQD5N30TM | onsemi |
![]() |
товар відсутній |
|||||||||||||
![]() |
FQD5N30TF | onsemi |
![]() |
товар відсутній |
|||||||||||||
![]() |
FFPF10F150STU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 170 ns Technology: Avalanche Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1500 V |
товар відсутній |
|||||||||||||
![]() |
KSC5338D | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V Frequency - Transition: 11MHz Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 75 W |
на замовлення 715 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
IRLS630A | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 5V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
KSC5338DTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V Frequency - Transition: 11MHz Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 75 W |
на замовлення 373 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
QSB34CGR | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, Gull Wing Wavelength: 940nm Mounting Type: Surface Mount Diode Type: Pin Operating Temperature: -25°C ~ 85°C Response Time: 50ns Viewing Angle: 120° Spectral Range: 400nm ~ 1100nm Active Area: 6.5mm² Current - Dark (Typ): 30nA Part Status: Active Voltage - DC Reverse (Vr) (Max): 32 V |
на замовлення 665781 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
FJP5027RTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 50 W |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FDW2501N | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Obsolete |
товар відсутній |
|||||||||||||
![]() |
FJP5027OTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 50 W |
на замовлення 2820 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
MM74HC589MX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-SOIC Part Status: Obsolete Number of Bits per Element: 8 |
товар відсутній |
|||||||||||||
![]() |
MM74HC589SJ | onsemi |
![]() Packaging: Tube Package / Case: 16-SOIC (0.209", 5.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-SOP Part Status: Obsolete Number of Bits per Element: 8 |
товар відсутній |
|||||||||||||
![]() |
IRLR230ATM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.75A, 5V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
NC7WB3306K8X | onsemi |
![]() |
товар відсутній |
|||||||||||||
![]() |
FJPF5027OTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220F-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 40 W |
на замовлення 475 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
FJPF5027RTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220F-3 Part Status: Last Time Buy Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 40 W |
товар відсутній |
|||||||||||||
![]() |
FQD5N40TF | onsemi | Description: MOSFET N-CH 400V 3.4A DPAK |
товар відсутній |
|||||||||||||
![]() |
FJP5027TU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 50 W |
товар відсутній |
|||||||||||||
![]() |
KA3845B | onsemi |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: 0°C ~ 70°C (TA) Duty Cycle: 48% Frequency - Switching: Up to 500kHz Internal Switch(s): No Voltage - Supply (Vcc/Vdd): 12V ~ 25V Supplier Device Package: 8-DIP Voltage - Start Up: 8.4 V Control Features: Frequency Control Part Status: Obsolete |
товар відсутній |
|||||||||||||
![]() |
FJPF5027TU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220F-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 40 W |
товар відсутній |
|||||||||||||
![]() |
FJPF5021OTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220F-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 40 W |
на замовлення 484 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
MM74HC589SJX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-SOP Part Status: Obsolete Number of Bits per Element: 8 |
товар відсутній |
|||||||||||||
![]() |
MM74HC589M | onsemi |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-SOIC Part Status: Obsolete Number of Bits per Element: 8 |
товар відсутній |
|||||||||||||
![]() |
FJPF5021RTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220F-3 Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 40 W |
товар відсутній |
|||||||||||||
![]() |
FQPF2P40 | onsemi |
![]() |
товар відсутній |
|||||||||||||
![]() |
FQU30N06LTU | onsemi |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
HUF76609D3ST | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V Power Dissipation (Max): 49W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
FQD19N10TF | onsemi |
Description: MOSFET N-CH 100V 15.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
FQD19N10TM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
FQB5P10TM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.25A, 10V Power Dissipation (Max): 3.75W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
FQD17P06TM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
на замовлення 17200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
KSC5039H2 | onsemi |
![]() |
товар відсутній |
|||||||||||||
![]() |
NZT45H8 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 40MHz Supplier Device Package: SOT-223-4 Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
товар відсутній |
|||||||||||||
![]() |
FQD30N06LTM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
FQB13N10LTM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V Power Dissipation (Max): 3.75W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
FQD14N15TM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
FQD6N40CTM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
NZT44H8 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 50MHz Supplier Device Package: SOT-223-4 Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
товар відсутній |
|||||||||||||
![]() |
FQB1P50TM | onsemi |
![]() |
товар відсутній |
|||||||||||||
![]() |
FQB13N06LTM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 6.8A, 10V Power Dissipation (Max): 3.75W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
FYP2004DNTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
товар відсутній |
|||||||||||||
![]() |
FQPF5N50C | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
FSA5157P6X | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 360mOhm (Typ) -3db Bandwidth: 80MHz Supplier Device Package: SC-88 (SC-70-6) Voltage - Supply, Single (V+): 1.65V ~ 4.3V Charge Injection: 6pC Crosstalk: -75dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 40mOhm Switch Time (Ton, Toff) (Max): 55ns, 30ns Channel Capacitance (CS(off), CD(off)): 21pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 1 |
товар відсутній |
|||||||||||||
![]() |
FIN1001M5 | onsemi |
![]() |
товар відсутній |
|||||||||||||
![]() |
FIN1002M5 | onsemi |
![]() |
товар відсутній |
|||||||||||||
![]() |
FSA5157L6X | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 360mOhm (Typ) -3db Bandwidth: 80MHz Supplier Device Package: 6-MicroPak Voltage - Supply, Single (V+): 1.65V ~ 4.3V Charge Injection: 6pC Crosstalk: -75dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 40mOhm Switch Time (Ton, Toff) (Max): 55ns, 30ns Channel Capacitance (CS(off), CD(off)): 21pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 1 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
FQD3N60TM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
FIN1002M5X | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Receiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 0/1 Data Rate: 400Mbps Protocol: LVDS Supplier Device Package: SOT-23-5 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
KA337 | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Output Type: Adjustable Mounting Type: Through Hole Current - Output: 1.5A Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Voltage - Input (Max): -40V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Max): -37V Voltage - Output (Min/Fixed): -1.2V PSRR: 60dB (120Hz) Protection Features: Over Temperature, Short Circuit |
товар відсутній |
FQP9N25CTSTU |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 250V 8.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Description: MOSFET N-CH 250V 8.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
товар відсутній
QSB34 |
![]() |
Виробник: onsemi
Description: SENSOR PHOTODIODE 940NM AXIAL
Packaging: Bulk
Package / Case: Axial
Wavelength: 940nm
Mounting Type: Through Hole
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 730nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Voltage - DC Reverse (Vr) (Max): 32 V
Description: SENSOR PHOTODIODE 940NM AXIAL
Packaging: Bulk
Package / Case: Axial
Wavelength: 940nm
Mounting Type: Through Hole
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 730nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Voltage - DC Reverse (Vr) (Max): 32 V
товар відсутній
FQD20N06LTF |
Виробник: onsemi
Description: MOSFET N-CH 60V 17.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Description: MOSFET N-CH 60V 17.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
товар відсутній
HUFA76407D3ST |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 12A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 13A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 60V 12A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 13A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
товар відсутній
HUFA75307D3ST |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 55V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Description: MOSFET N-CH 55V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
товар відсутній
KSA1010OTU |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 3A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Description: TRANS PNP 100V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 3A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
товар відсутній
KSA1010RTU |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Description: TRANS PNP 100V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
товар відсутній
KSA1010Y |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Description: TRANS PNP 100V 7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
товар відсутній
FQB7N10LTM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 7.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 3.65A, 10V
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Description: MOSFET N-CH 100V 7.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 3.65A, 10V
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
товар відсутній
FQB20N06LTM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Description: MOSFET N-CH 60V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
товар відсутній
FFPF10F150STU |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 1.5KV 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Avalanche
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
Description: DIODE GEN PURP 1.5KV 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Avalanche
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товар відсутній
KSC5338D |
![]() |
Виробник: onsemi
Description: TRANS NPN 450V 5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Frequency - Transition: 11MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
Description: TRANS NPN 450V 5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Frequency - Transition: 11MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
на замовлення 715 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 80.66 грн |
10+ | 63.67 грн |
200+ | 49.52 грн |
600+ | 39.39 грн |
IRLS630A |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 200V 6.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Description: MOSFET N-CH 200V 6.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
товар відсутній
KSC5338DTU |
![]() |
Виробник: onsemi
Description: TRANS NPN 450V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Frequency - Transition: 11MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
Description: TRANS NPN 450V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Frequency - Transition: 11MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
на замовлення 373 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.8 грн |
10+ | 86.1 грн |
100+ | 68.55 грн |
QSB34CGR |
![]() |
Виробник: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Gull Wing
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 400nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 32 V
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Gull Wing
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 400nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 32 V
на замовлення 665781 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 82.17 грн |
10+ | 50.16 грн |
100+ | 37.13 грн |
500+ | 32.01 грн |
FJP5027RTU |
![]() |
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
на замовлення 980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.89 грн |
50+ | 59.83 грн |
100+ | 47.43 грн |
500+ | 37.72 грн |
FDW2501N |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 20V 6A 8-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Description: MOSFET 2N-CH 20V 6A 8-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
товар відсутній
FJP5027OTU |
![]() |
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
на замовлення 2820 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 85.94 грн |
10+ | 67.73 грн |
100+ | 52.71 грн |
500+ | 41.93 грн |
1000+ | 34.15 грн |
2000+ | 32.15 грн |
MM74HC589MX |
![]() |
Виробник: onsemi
Description: IC SHIFT REGISTER 8-BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Bits per Element: 8
Description: IC SHIFT REGISTER 8-BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
MM74HC589SJ |
![]() |
Виробник: onsemi
Description: IC SHIFT REGISTER 8-BIT 16-SOP
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Part Status: Obsolete
Number of Bits per Element: 8
Description: IC SHIFT REGISTER 8-BIT 16-SOP
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
IRLR230ATM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 200V 7.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.75A, 5V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Description: MOSFET N-CH 200V 7.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.75A, 5V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
товар відсутній
FJPF5027OTU |
![]() |
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
Description: TRANS NPN 800V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
на замовлення 475 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 88.2 грн |
50+ | 68.37 грн |
100+ | 54.18 грн |
FJPF5027RTU |
![]() |
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
Description: TRANS NPN 800V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
товар відсутній
FJP5027TU |
![]() |
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
товар відсутній
KA3845B |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 48%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Supplier Device Package: 8-DIP
Voltage - Start Up: 8.4 V
Control Features: Frequency Control
Part Status: Obsolete
Description: IC OFFLINE SWITCH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 48%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Supplier Device Package: 8-DIP
Voltage - Start Up: 8.4 V
Control Features: Frequency Control
Part Status: Obsolete
товар відсутній
FJPF5027TU |
![]() |
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
Description: TRANS NPN 800V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
товар відсутній
FJPF5021OTU |
![]() |
Виробник: onsemi
Description: TRANS NPN 500V 5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 40 W
Description: TRANS NPN 500V 5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 40 W
на замовлення 484 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 101.02 грн |
50+ | 77.98 грн |
100+ | 61.81 грн |
MM74HC589SJX |
![]() |
Виробник: onsemi
Description: IC SHIFT REGISTER 8-BIT 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Part Status: Obsolete
Number of Bits per Element: 8
Description: IC SHIFT REGISTER 8-BIT 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
MM74HC589M |
![]() |
Виробник: onsemi
Description: IC SHIFT REGISTER 8-BIT 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Bits per Element: 8
Description: IC SHIFT REGISTER 8-BIT 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
FJPF5021RTU |
![]() |
Виробник: onsemi
Description: TRANS NPN 500V 5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 40 W
Description: TRANS NPN 500V 5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 40 W
товар відсутній
FQU30N06LTU |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 24A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Description: MOSFET N-CH 60V 24A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
товар відсутній
HUF76609D3ST |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Description: MOSFET N-CH 100V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
товар відсутній
FQD19N10TF |
Виробник: onsemi
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
товар відсутній
FQD19N10TM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
товар відсутній
FQB5P10TM |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 100V 4.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.25A, 10V
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Description: MOSFET P-CH 100V 4.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.25A, 10V
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
товар відсутній
FQD17P06TM |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
на замовлення 17200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 29.49 грн |
5000+ | 27.05 грн |
12500+ | 25.8 грн |
NZT45H8 |
![]() |
Виробник: onsemi
Description: TRANS PNP 60V 8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Description: TRANS PNP 60V 8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товар відсутній
FQD30N06LTM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
товар відсутній
FQB13N10LTM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 12.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Power Dissipation (Max): 3.75W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Description: MOSFET N-CH 100V 12.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Power Dissipation (Max): 3.75W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
товар відсутній
FQD14N15TM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
Description: MOSFET N-CH 150V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
товар відсутній
FQD6N40CTM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 400V 4.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 400V 4.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
товар відсутній
NZT44H8 |
![]() |
Виробник: onsemi
Description: TRANS NPN 60V 8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Description: TRANS NPN 60V 8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товар відсутній
FQB13N06LTM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 13.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.8A, 10V
Power Dissipation (Max): 3.75W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 60V 13.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.8A, 10V
Power Dissipation (Max): 3.75W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
товар відсутній
FYP2004DNTU |
![]() |
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 40V TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE ARRAY SCHOTTKY 40V TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
товар відсутній
FQPF5N50C |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 500V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 500V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
товар відсутній
FSA5157P6X |
![]() |
Виробник: onsemi
Description: IC SWITCH SPDT X 1 360MOHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 360mOhm (Typ)
-3db Bandwidth: 80MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 6pC
Crosstalk: -75dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 40mOhm
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel Capacitance (CS(off), CD(off)): 21pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 360MOHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 360mOhm (Typ)
-3db Bandwidth: 80MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 6pC
Crosstalk: -75dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 40mOhm
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel Capacitance (CS(off), CD(off)): 21pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
товар відсутній
FSA5157L6X |
![]() |
Виробник: onsemi
Description: IC SW SPDTX1 360MOHM 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 360mOhm (Typ)
-3db Bandwidth: 80MHz
Supplier Device Package: 6-MicroPak
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 6pC
Crosstalk: -75dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 40mOhm
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel Capacitance (CS(off), CD(off)): 21pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Description: IC SW SPDTX1 360MOHM 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 360mOhm (Typ)
-3db Bandwidth: 80MHz
Supplier Device Package: 6-MicroPak
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 6pC
Crosstalk: -75dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 40mOhm
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel Capacitance (CS(off), CD(off)): 21pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 12.11 грн |
10000+ | 11.05 грн |
FQD3N60TM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Description: MOSFET N-CH 600V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
товар відсутній
FIN1002M5X |
![]() |
Виробник: onsemi
Description: IC RECEIVER 0/1 SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Active
Description: IC RECEIVER 0/1 SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 21.07 грн |
6000+ | 19.54 грн |
KA337 |
![]() |
Виробник: onsemi
Description: IC REG LIN NEG ADJ 1.5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): -37V
Voltage - Output (Min/Fixed): -1.2V
PSRR: 60dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LIN NEG ADJ 1.5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): -37V
Voltage - Output (Min/Fixed): -1.2V
PSRR: 60dB (120Hz)
Protection Features: Over Temperature, Short Circuit
товар відсутній