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BUK7514-55A,127 BUK7514-55A,127 NXP USA Inc. BUK7514-55A.pdf Description: MOSFET N-CH 55V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2464 pF @ 25 V
товар відсутній
BUK7528-55,127 BUK7528-55,127 NXP USA Inc. BUK7528-55.pdf Description: MOSFET N-CH 55V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
товар відсутній
BUK7540-100A,127 BUK7540-100A,127 NXP USA Inc. BUK7540-100A.pdf Description: MOSFET N-CH 100V 37A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2293 pF @ 25 V
товар відсутній
BUK7575-55,127 BUK7575-55,127 NXP USA Inc. BUK7575-55.pdf Description: MOSFET N-CH 55V 19.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
товар відсутній
BUK7605-30A,118 BUK7605-30A,118 NXP USA Inc. BUK7605-30A_2.pdf Description: MOSFET N-CH 30V 75A D2PAK
товар відсутній
BUK7608-55,118 BUK7608-55,118 NXP USA Inc. BUK7608-55.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
BUK7615-100A,118 BUK7615-100A,118 NXP USA Inc. BUK7615-100A_1.pdf Description: MOSFET N-CH 100V 75A D2PAK
товар відсутній
BUK7624-55,118 BUK7624-55,118 NXP USA Inc. BUK7624-55.pdf Description: MOSFET N-CH 55V 45A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
товар відсутній
BUK78150-55A,135 BUK78150-55A,135 NXP USA Inc. BUK78150-55A.pdf Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BUK78150-55A,115 BUK78150-55A,115 NXP USA Inc. BUK78150-55A.pdf Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BUK9237-55,118 BUK9237-55,118 NXP USA Inc. Description: MOSFET N-CH 55V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1236 pF @ 25 V
товар відсутній
BUK9505-30A,127 BUK9505-30A,127 NXP USA Inc. Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товар відсутній
BUK9506-55A,127 BUK9506-55A,127 NXP USA Inc. BUK9506_9606_9E06_55A-03.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товар відсутній
BUK9508-55A,127 BUK9508-55A,127 NXP USA Inc. BUK(95,96)08-55A.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Power Dissipation (Max): 253W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6021 pF @ 25 V
товар відсутній
BUK9510-55A,127 BUK9510-55A,127 NXP USA Inc. BUK9510-55A.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4307 pF @ 25 V
товар відсутній
BUK9518-55,127 BUK9518-55,127 NXP USA Inc. BUK9518-55.pdf Description: MOSFET N-CH 55V 57A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 5V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
товар відсутній
BUK9520-55,127 BUK9520-55,127 NXP USA Inc. BUK9520-55.pdf Description: MOSFET N-CH 55V 52A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 5V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товар відсутній
BUK9523-75A,127 BUK9523-75A,127 NXP USA Inc. BUK9523-75A.pdf Description: MOSFET N-CH 75V 53A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
товар відсутній
BUK9528-100A,127 BUK9528-100A,127 NXP USA Inc. buk9(5,6)28-100A.pdf Description: MOSFET N-CH 100V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 4293 pF @ 25 V
товар відсутній
BUK9608-55,118 BUK9608-55,118 NXP USA Inc. BUK9608-55.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 5V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
товар відсутній
BUK9610-55A,118 BUK9610-55A,118 NXP USA Inc. Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4307 pF @ 25 V
товар відсутній
BUK9616-55A,118 BUK9616-55A,118 NXP USA Inc. BUK9%285%2C6%2916-55A.pdf Description: MOSFET N-CH 55V 66A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 3085 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
BUK9618-55A,118 BUK9618-55A,118 NXP USA Inc. BUK9518-55A,9618-55A.pdf Description: MOSFET N-CH 55V 61A D2PAK
товар відсутній
BUK9620-100A,118 BUK9620-100A,118 NXP USA Inc. DS_568_BUK9520-100A.pdf Description: MOSFET N-CH 100V 63A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6385 pF @ 25 V
товар відсутній
BUK9635-100A,118 BUK9635-100A,118 NXP USA Inc. BUK9635-100A.pdf Description: MOSFET N-CH 100V 41A D2PAK
товар відсутній
BUK9635-55,118 BUK9635-55,118 NXP USA Inc. BUK9635-55.pdf Description: MOSFET N-CH 55V 34A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 5V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товар відсутній
BUK9832-55A,115 BUK9832-55A,115 NXP USA Inc. BUK9832-55A.pdf Description: MOSFET N-CH 55V 12A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 8A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1594 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BUK9880-55A,115 BUK9880-55A,115 NXP USA Inc. BUK9880-55A.pdf Description: MOSFET N-CH 55V 7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BUT11APX,127 BUT11APX,127 NXP USA Inc. BUT11APX_1.pdf Description: TRANS NPN 450V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
Supplier Device Package: TO-220F
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 32 W
товар відсутній
BY329X-1200,127 BY329X-1200,127 NXP USA Inc. BY329(F,X).pdf Description: DIODE GEN PURP 1.2KV 8A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 1000 V
товар відсутній
BZA100,118 BZA100,118 NXP USA Inc. Description: TVS DIODE 6.8VWM 11VC 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 120pF @ 1MHz
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: 20-SO
Unidirectional Channels: 18
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 27.5W
Power Line Protection: No
товар відсутній
BZA862A,115 BZA862A,115 NXP USA Inc. BZA800A_SERIES.pdf Description: TVS DIODE 6.2VWM 5TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: SOT-353
Unidirectional Channels: 4
Power - Peak Pulse: 24W
Power Line Protection: No
товар відсутній
BZA862AL,115 BZA862AL,115 NXP USA Inc. BZA862AL.pdf Description: TVS DIODE 6.2VWM 5TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: SOT-353
Unidirectional Channels: 4
Power - Peak Pulse: 15W
Power Line Protection: No
товар відсутній
BZA862AVL,115 BZA862AVL,115 NXP USA Inc. BZA800AVL_SERIES.pdf Description: TVS DIODE 6.2VWM SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: SOT-353
Unidirectional Channels: 4
Power - Peak Pulse: 6W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
BZA868AL,115 BZA868AL,115 NXP USA Inc. BZA862AL.pdf Description: TVS DIODE 6.8VWM 5TSSOP
товар відсутній
BZA956AVL,115 BZA956AVL,115 NXP USA Inc. BZA900AVL_SERIES.pdf Description: TVS DIODE 5.6VWM SOT665
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 22pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: SOT-665
Unidirectional Channels: 4
Power - Peak Pulse: 6W
Power Line Protection: No
товар відсутній
BZX284-B10,115 BZX284-B10,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 10V 400MW SOD110
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
товар відсутній
BZX284-B11,115 BZX284-B11,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 11V 400MW SOD110
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товар відсутній
BZX284-B12,115 BZX284-B12,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 12V 400MW SOD110
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товар відсутній
BZX284-B13,115 BZX284-B13,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 13V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товар відсутній
BZX284-B15,115 BZX284-B15,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 15V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
товар відсутній
BZX284-B16,115 BZX284-B16,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 16V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
товар відсутній
BZX284-B18,115 BZX284-B18,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 18V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
товар відсутній
BZX284-B20,115 BZX284-B20,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 20V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
товар відсутній
BZX284-B22,115 BZX284-B22,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 22V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
товар відсутній
BZX284-B24,115 BZX284-B24,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 24V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
товар відсутній
BZX284-B27,115 BZX284-B27,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 27V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
товар відсутній
BZX284-B2V4,115 BZX284-B2V4,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 2.4V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
BZX284-B2V7,115 BZX284-B2V7,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 2.7V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
товар відсутній
BZX284-B30,115 BZX284-B30,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 30V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
товар відсутній
BZX284-B33,115 BZX284-B33,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 33V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
товар відсутній
BZX284-B36,115 BZX284-B36,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 36V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
товар відсутній
BZX284-B39,115 BZX284-B39,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 39V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
товар відсутній
BZX284-B3V0,115 BZX284-B3V0,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 3V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товар відсутній
BZX284-B3V3,115 BZX284-B3V3,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 3.3V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товар відсутній
BZX284-B3V6,115 BZX284-B3V6,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 3.6V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товар відсутній
BZX284-B3V9,115 BZX284-B3V9,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 3.9V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
товар відсутній
BZX284-B43,115 BZX284-B43,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 43V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
товар відсутній
BZX284-B47,115 BZX284-B47,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 47V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
товар відсутній
BZX284-B4V3,115 BZX284-B4V3,115 NXP USA Inc. BZX284.pdf Description: DIODE ZENER 4.3V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
товар відсутній
BUK7514-55A,127 BUK7514-55A.pdf
BUK7514-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2464 pF @ 25 V
товар відсутній
BUK7528-55,127 BUK7528-55.pdf
BUK7528-55,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
товар відсутній
BUK7540-100A,127 BUK7540-100A.pdf
BUK7540-100A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 37A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2293 pF @ 25 V
товар відсутній
BUK7575-55,127 BUK7575-55.pdf
BUK7575-55,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 19.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
товар відсутній
BUK7605-30A,118 BUK7605-30A_2.pdf
BUK7605-30A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 75A D2PAK
товар відсутній
BUK7608-55,118 BUK7608-55.pdf
BUK7608-55,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
BUK7615-100A,118 BUK7615-100A_1.pdf
BUK7615-100A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
товар відсутній
BUK7624-55,118 BUK7624-55.pdf
BUK7624-55,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 45A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
товар відсутній
BUK78150-55A,135 BUK78150-55A.pdf
BUK78150-55A,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BUK78150-55A,115 BUK78150-55A.pdf
BUK78150-55A,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BUK9237-55,118
BUK9237-55,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1236 pF @ 25 V
товар відсутній
BUK9505-30A,127
BUK9505-30A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товар відсутній
BUK9506-55A,127 BUK9506_9606_9E06_55A-03.pdf
BUK9506-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товар відсутній
BUK9508-55A,127 BUK(95,96)08-55A.pdf
BUK9508-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Power Dissipation (Max): 253W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6021 pF @ 25 V
товар відсутній
BUK9510-55A,127 BUK9510-55A.pdf
BUK9510-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4307 pF @ 25 V
товар відсутній
BUK9518-55,127 BUK9518-55.pdf
BUK9518-55,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 57A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 5V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
товар відсутній
BUK9520-55,127 BUK9520-55.pdf
BUK9520-55,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 52A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 5V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товар відсутній
BUK9523-75A,127 BUK9523-75A.pdf
BUK9523-75A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 53A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
товар відсутній
BUK9528-100A,127 buk9(5,6)28-100A.pdf
BUK9528-100A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 4293 pF @ 25 V
товар відсутній
BUK9608-55,118 BUK9608-55.pdf
BUK9608-55,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 5V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
товар відсутній
BUK9610-55A,118
BUK9610-55A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4307 pF @ 25 V
товар відсутній
BUK9616-55A,118 BUK9%285%2C6%2916-55A.pdf
BUK9616-55A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 66A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 3085 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
BUK9618-55A,118 BUK9518-55A,9618-55A.pdf
BUK9618-55A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 61A D2PAK
товар відсутній
BUK9620-100A,118 DS_568_BUK9520-100A.pdf
BUK9620-100A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 63A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6385 pF @ 25 V
товар відсутній
BUK9635-100A,118 BUK9635-100A.pdf
BUK9635-100A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 41A D2PAK
товар відсутній
BUK9635-55,118 BUK9635-55.pdf
BUK9635-55,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 34A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 5V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товар відсутній
BUK9832-55A,115 BUK9832-55A.pdf
BUK9832-55A,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 12A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 8A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1594 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BUK9880-55A,115 BUK9880-55A.pdf
BUK9880-55A,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BUT11APX,127 BUT11APX_1.pdf
BUT11APX,127
Виробник: NXP USA Inc.
Description: TRANS NPN 450V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
Supplier Device Package: TO-220F
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 32 W
товар відсутній
BY329X-1200,127 BY329(F,X).pdf
BY329X-1200,127
Виробник: NXP USA Inc.
Description: DIODE GEN PURP 1.2KV 8A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 1000 V
товар відсутній
BZA100,118
BZA100,118
Виробник: NXP USA Inc.
Description: TVS DIODE 6.8VWM 11VC 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 120pF @ 1MHz
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: 20-SO
Unidirectional Channels: 18
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 27.5W
Power Line Protection: No
товар відсутній
BZA862A,115 BZA800A_SERIES.pdf
BZA862A,115
Виробник: NXP USA Inc.
Description: TVS DIODE 6.2VWM 5TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: SOT-353
Unidirectional Channels: 4
Power - Peak Pulse: 24W
Power Line Protection: No
товар відсутній
BZA862AL,115 BZA862AL.pdf
BZA862AL,115
Виробник: NXP USA Inc.
Description: TVS DIODE 6.2VWM 5TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: SOT-353
Unidirectional Channels: 4
Power - Peak Pulse: 15W
Power Line Protection: No
товар відсутній
BZA862AVL,115 BZA800AVL_SERIES.pdf
BZA862AVL,115
Виробник: NXP USA Inc.
Description: TVS DIODE 6.2VWM SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: SOT-353
Unidirectional Channels: 4
Power - Peak Pulse: 6W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
BZA868AL,115 BZA862AL.pdf
BZA868AL,115
Виробник: NXP USA Inc.
Description: TVS DIODE 6.8VWM 5TSSOP
товар відсутній
BZA956AVL,115 BZA900AVL_SERIES.pdf
BZA956AVL,115
Виробник: NXP USA Inc.
Description: TVS DIODE 5.6VWM SOT665
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 22pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: SOT-665
Unidirectional Channels: 4
Power - Peak Pulse: 6W
Power Line Protection: No
товар відсутній
BZX284-B10,115 BZX284.pdf
BZX284-B10,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 10V 400MW SOD110
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
товар відсутній
BZX284-B11,115 BZX284.pdf
BZX284-B11,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 11V 400MW SOD110
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товар відсутній
BZX284-B12,115 BZX284.pdf
BZX284-B12,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 12V 400MW SOD110
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товар відсутній
BZX284-B13,115 BZX284.pdf
BZX284-B13,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 13V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товар відсутній
BZX284-B15,115 BZX284.pdf
BZX284-B15,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 15V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
товар відсутній
BZX284-B16,115 BZX284.pdf
BZX284-B16,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 16V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
товар відсутній
BZX284-B18,115 BZX284.pdf
BZX284-B18,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 18V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
товар відсутній
BZX284-B20,115 BZX284.pdf
BZX284-B20,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 20V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
товар відсутній
BZX284-B22,115 BZX284.pdf
BZX284-B22,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 22V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
товар відсутній
BZX284-B24,115 BZX284.pdf
BZX284-B24,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 24V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
товар відсутній
BZX284-B27,115 BZX284.pdf
BZX284-B27,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 27V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
товар відсутній
BZX284-B2V4,115 BZX284.pdf
BZX284-B2V4,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 2.4V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
BZX284-B2V7,115 BZX284.pdf
BZX284-B2V7,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 2.7V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
товар відсутній
BZX284-B30,115 BZX284.pdf
BZX284-B30,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 30V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
товар відсутній
BZX284-B33,115 BZX284.pdf
BZX284-B33,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 33V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
товар відсутній
BZX284-B36,115 BZX284.pdf
BZX284-B36,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 36V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
товар відсутній
BZX284-B39,115 BZX284.pdf
BZX284-B39,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 39V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
товар відсутній
BZX284-B3V0,115 BZX284.pdf
BZX284-B3V0,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 3V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товар відсутній
BZX284-B3V3,115 BZX284.pdf
BZX284-B3V3,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 3.3V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-110
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товар відсутній
BZX284-B3V6,115 BZX284.pdf
BZX284-B3V6,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 3.6V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товар відсутній
BZX284-B3V9,115 BZX284.pdf
BZX284-B3V9,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 3.9V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
товар відсутній
BZX284-B43,115 BZX284.pdf
BZX284-B43,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 43V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
товар відсутній
BZX284-B47,115 BZX284.pdf
BZX284-B47,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 47V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
товар відсутній
BZX284-B4V3,115 BZX284.pdf
BZX284-B4V3,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 4.3V 400MW SOD110
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-110
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-110
Part Status: Obsolete
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
товар відсутній
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