Продукція > GAN
Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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GAN DICHTUNG | Belden | 735633002 | товар відсутній | |||||||||||||||
GAN FET BOOK - DC/DC | EPC | Description: TEXT DC-DC CONVERTER HANDBOOK | на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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GAN FET BOOK - WIPO 2ND EDITION | EPC | Description: TEXT WIRELESS POWER HANDBOOK-2ND | на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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GAN FET BOOK SIMPLIFIED CHINESE | EPC | Description: TEXT GAN TRANSISTORS | товар відсутній | |||||||||||||||
GAN FET BOOK-WIPO | EPC | Description: TEXT WIRELESS POWER HANDBOOK | товар відсутній | |||||||||||||||
GAN FIXIERTEIL | Belden | 735656002 | товар відсутній | |||||||||||||||
GAN POWER DEVICES AND APPLICATIONS 1ST ED | EPC | Description: TEXT GAN POWER DEVICES & APPS Packaging: Box Type: Book Title: GaN Power Devices and Applications Author(s): Alex Lidow Publisher: J.Wiley | на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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GAN-CLIP FOR HOLDING GASKET | HIRSCHMANN | Description: HIRSCHMANN - GAN-CLIP FOR HOLDING GASKET - FIXING CLIP, RECTANGULAR CONNECTOR tariffCode: 85389099 Art des Zubehörs: Fixing Clip productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 Zur Verwendung mit: GDM Series Type A Overmolded Female Valve Connectors usEccn: EAR99 Produktpalette: GDM Series SVHC: No SVHC (19-Jan-2021) | на замовлення 1032 шт: термін постачання 21-31 дні (днів) |
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GAN-DADE7A-AG0500C1-XC607-AC | Belden | Valve Accessories, 3m 19AWG (2Signal/1Ground) IP67 DIN Valve Connector M | товар відсутній | |||||||||||||||
GAN-DADE7A-FS0500C1-XC607-AC | Belden | Valve Access Cable Socket Polyamide Black | товар відсутній | |||||||||||||||
GAN-DAEE7A-AH0200C1-XC607-AD | Belden | Valve Access Cable Socket Polyamide Black | товар відсутній | |||||||||||||||
GAN-DAEE7A-AH0500C1-XC607-AC | Belden | Valve Access Cable Socket Polyamide Black | товар відсутній | |||||||||||||||
GAN-DAFE7A-AG0200C1-XC607-AD | Belden | 934562004 | товар відсутній | |||||||||||||||
GAN-DAFE7A-AG0500C1-XC607-AC | Belden | Valve Access Cable Socket Polyamide Black | товар відсутній | |||||||||||||||
GAN-DEFE7X-FS0500C1-XC607-AC | Belden | Valve Access Cable Socket Polyamide Black | товар відсутній | |||||||||||||||
GAN-DFFE7X-AG0500C1-XC607-AC | Belden | Valve Access Cable Socket Polyamide Transparent Blue | товар відсутній | |||||||||||||||
GAN-GASKET FOR IP69K | HIRSCHMANN | Description: HIRSCHMANN - GAN-GASKET FOR IP69K - GAN GASKET, RECTANGULAR CONNECTOR tariffCode: 40169300 Art des Zubehörs: GAN Gasket productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 Zur Verwendung mit: GDM Series Type A Overmolded Female Valve Connectors usEccn: EAR99 Produktpalette: GDM Series SVHC: No SVHC (19-Jan-2021) | на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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GAN-STAINLESS SCREW M3X28 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN014-650NBCA | Nexperia | Nexperia 650V TO247 GALLIUM NITRIDE FET | товар відсутній | |||||||||||||||
GAN039-650NBB | Nexperia | Nexperia MOS DISCRETES | товар відсутній | |||||||||||||||
GAN039-650NBBHP | Nexperia | GaN FETs 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package | товар відсутній | |||||||||||||||
GAN039-650NTBA | Nexperia | 650 V, 33 mOhm Gallium Nitride GaN FET Automotive AEC-Q101 | товар відсутній | |||||||||||||||
GAN039-650NTBZ | NEXPERIA | 650 V, 33 mOhm Gallium Nitride GaN FET | товар відсутній | |||||||||||||||
GAN039-650NTBZ | Nexperia | GaN FETs 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | товар відсутній | |||||||||||||||
GAN039-650NTBZ | NEXPERIA | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | товар відсутній | |||||||||||||||
GAN041-650WSA | Nexperia | Nexperia | товар відсутній | |||||||||||||||
GAN041-650WSBQ | Nexperia | 650 V, 35 mOhm Gallium Nitride FET in a TO-247 package 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||||||
GAN041-650WSBQ | NEXPERIA | Description: NEXPERIA - GAN041-650WSBQ - Galliumnitrid (GaN)-Transistor, 650 V, 47.2 A, 0.041 ohm, 22 nC, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 47.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 22nC Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.041ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 310 шт: термін постачання 21-31 дні (днів) |
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GAN041-650WSBQ | NEXPERIA | 650 V, 35 mOhm Gallium Nitride FET in a TO-247 package 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||||||
GAN041-650WSBQ | Nexperia | GaN FETs GAN041-650WSB/SOT429/TO-247 | на замовлення 146 шт: термін постачання 21-30 дні (днів) |
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GAN041-650WSBQ | NEXPERIA | Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET/N-MOSFET Technology: GaN Polarisation: unipolar Kind of transistor: cascode; HEMT Drain-source voltage: 650V Drain current: 33.4A Pulsed drain current: 240A Power dissipation: 187W Case: SOT429; TO247 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 22nC Kind of package: tube | на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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GAN041-650WSBQ | NEXPERIA | Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET/N-MOSFET Technology: GaN Polarisation: unipolar Kind of transistor: cascode; HEMT Drain-source voltage: 650V Drain current: 33.4A Pulsed drain current: 240A Power dissipation: 187W Case: SOT429; TO247 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 22nC Kind of package: tube кількість в упаковці: 1 шт | на замовлення 19 шт: термін постачання 14-21 дні (днів) |
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GAN041-650WSBQ | Nexperia USA Inc. | Description: GAN041-650WSB/SOT429/TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V | на замовлення 284 шт: термін постачання 21-31 дні (днів) |
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GAN041-650WSBQ | NEXPERIA | 650 V, 35 mOhm Gallium Nitride FET in a TO-247 package 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||||||
GAN063-650WSAQ | NEXPERIA | Description: NEXPERIA - GAN063-650WSAQ - Galliumnitrid (GaN)-Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 34.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 15nC Bauform - Transistor: TP-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 58 шт: термін постачання 21-31 дні (днів) |
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GAN063-650WSAQ | NEXPERIA | Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||||||
GAN063-650WSAQ | Nexperia | GaN FETs GAN063-650WSA/SOT429/TO-247 | на замовлення 416 шт: термін постачання 21-30 дні (днів) |
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GAN063-650WSAQ | NEXPERIA | Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET/N-MOSFET Technology: GaN Polarisation: unipolar Kind of transistor: cascode; HEMT Drain-source voltage: 650V Drain current: 24.4A Pulsed drain current: 150A Power dissipation: 143W Case: SOT429; TO247 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 15nC Kind of package: tube | товар відсутній | |||||||||||||||
GAN063-650WSAQ | NEXPERIA | Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET/N-MOSFET Technology: GaN Polarisation: unipolar Kind of transistor: cascode; HEMT Drain-source voltage: 650V Drain current: 24.4A Pulsed drain current: 150A Power dissipation: 143W Case: SOT429; TO247 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 15nC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
GAN063-650WSAQ | Nexperia | Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247 Tube | на замовлення 260 шт: термін постачання 21-31 дні (днів) |
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GAN063-650WSAQ | Nexperia USA Inc. | Description: GANFET N-CH 650V 34.5A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Power Dissipation (Max): 143W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V | на замовлення 564 шт: термін постачання 21-31 дні (днів) |
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GAN063-650WSAQ | NEXPERIA | Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||||||
GAN063-650WSAQ | Nexperia | Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247 Tube | на замовлення 260 шт: термін постачання 21-31 дні (днів) |
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GAN063-650WSAQ | NXP | Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247 GAN063-650WSAQ TGAN063-650WSAQ кількість в упаковці: 1 шт | на замовлення 5 шт: термін постачання 28-31 дні (днів) |
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GAN065-084050 | GREEN DIGITAL POWER TECH | Category: Chargers Description: Charger: for rechargeable batteries; Li-Ion; 7.2V; 5A Type of charger: for rechargeable batteries Max. charging current: 5A Rechargeable battery voltage: 7.2V Kind of rechargeable battery: Li-Ion Protection: overcharging protection; overheating OTP; short circuit protection SCP кількість в упаковці: 1 шт | на замовлення 7 шт: термін постачання 14-21 дні (днів) |
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GAN065-084050 | GREEN DIGITAL POWER TECH | Category: Chargers Description: Charger: for rechargeable batteries; Li-Ion; 7.2V; 5A Type of charger: for rechargeable batteries Max. charging current: 5A Rechargeable battery voltage: 7.2V Kind of rechargeable battery: Li-Ion Protection: overcharging protection; overheating OTP; short circuit protection SCP | на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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GAN065-252020 | GREEN DIGITAL POWER TECH | Category: Chargers Description: Charger: for rechargeable batteries; Li-Ion; 25.9V; 2A Type of charger: for rechargeable batteries Max. charging current: 2A Rechargeable battery voltage: 25.9V Kind of rechargeable battery: Li-Ion Protection: overcharging protection; overheating OTP; short circuit protection SCP кількість в упаковці: 1 шт | на замовлення 5 шт: термін постачання 14-21 дні (днів) |
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GAN065-252020 | GREEN DIGITAL POWER TECH | Category: Chargers Description: Charger: for rechargeable batteries; Li-Ion; 25.9V; 2A Type of charger: for rechargeable batteries Max. charging current: 2A Rechargeable battery voltage: 25.9V Kind of rechargeable battery: Li-Ion Protection: overcharging protection; overheating OTP; short circuit protection SCP | на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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GAN080-650EBEZ | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 29A Pulsed drain current: 58A Power dissipation: 240W Case: DFN8080-8 Gate-source voltage: -6...7V On-state resistance: 80mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal | товар відсутній | |||||||||||||||
GAN080-650EBEZ | Nexperia USA Inc. | Description: 650 V, 80 MOHM GALLIUM NITRIDE ( Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 30.7mA Supplier Device Package: DFN8080-8 Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -6V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V | товар відсутній | |||||||||||||||
GAN080-650EBEZ | NEXPERIA | Description: NEXPERIA - GAN080-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.06 ohm, 6.2 nC, DFN8080, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 6.2nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 4206 шт: термін постачання 21-31 дні (днів) |
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GAN080-650EBEZ | NEXPERIA | GAN080-650EBE/SOT8074/DFN8080- | товар відсутній | |||||||||||||||
GAN080-650EBEZ | Nexperia USA Inc. | Description: 650 V, 80 MOHM GALLIUM NITRIDE ( Packaging: Cut Tape (CT) Part Status: Active Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 30.7mA Supplier Device Package: DFN8080-8 Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -6V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V | на замовлення 1970 шт: термін постачання 21-31 дні (днів) |
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GAN080-650EBEZ | NEXPERIA | Description: NEXPERIA - GAN080-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.06 ohm, 6.2 nC, DFN8080, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 6.2nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 4206 шт: термін постачання 21-31 дні (днів) |
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GAN080-650EBEZ | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 29A Pulsed drain current: 58A Power dissipation: 240W Case: DFN8080-8 Gate-source voltage: -6...7V On-state resistance: 80mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 2500 шт | товар відсутній | |||||||||||||||
GAN080-650EBEZ | Nexperia | GaN FETs MOS DISCRETES | на замовлення 1418 шт: термін постачання 21-30 дні (днів) |
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GAN140-650EBEZ | Nexperia USA Inc. | Description: 650 V, 140 MOHM GALLIUM NITRIDE Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V | товар відсутній | |||||||||||||||
GAN140-650EBEZ | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Power dissipation: 113W Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 2500 шт | товар відсутній | |||||||||||||||
GAN140-650EBEZ | Nexperia | GaN FETs MOS DISCRETES | на замовлення 2175 шт: термін постачання 21-30 дні (днів) |
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GAN140-650EBEZ | NEXPERIA | Description: NEXPERIA - GAN140-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 17 A, 0.106 ohm, 3.5 nC, DFN8080, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 3.5nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.106ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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GAN140-650EBEZ | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Power dissipation: 113W Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal | товар відсутній | |||||||||||||||
GAN140-650EBEZ | Nexperia USA Inc. | Description: 650 V, 140 MOHM GALLIUM NITRIDE Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V | на замовлення 2445 шт: термін постачання 21-31 дні (днів) |
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GAN140-650EBEZ | NEXPERIA | Description: NEXPERIA - GAN140-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 17 A, 0.106 ohm, 3.5 nC, DFN8080, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 3.5nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.106ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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GAN140-650EBEZ | NEXPERIA | Trans MOSFET N-CH GaN 650V 17A 8-Pin DFN EP T/R | товар відсутній | |||||||||||||||
GAN140-650FBEZ | Nexperia USA Inc. | Description: 650 V, 140 MOHM GALLIUM NITRIDE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V | на замовлення 2366 шт: термін постачання 21-31 дні (днів) |
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GAN140-650FBEZ | NEXPERIA | Description: NEXPERIA - GAN140-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 17 A, 0.106 ohm, 3.5 nC, DFN5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 3.5nC Bauform - Transistor: DFN5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Drain-Source-Durchgangswiderstand: 0.106ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2190 шт: термін постачання 21-31 дні (днів) |
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GAN140-650FBEZ | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Power dissipation: 113W Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal | товар відсутній | |||||||||||||||
GAN140-650FBEZ | Nexperia USA Inc. | Description: 650 V, 140 MOHM GALLIUM NITRIDE Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V | товар відсутній | |||||||||||||||
GAN140-650FBEZ | NEXPERIA | Description: NEXPERIA - GAN140-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 17 A, 0.106 ohm, 3.5 nC, DFN5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 3.5nC Bauform - Transistor: DFN5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Drain-Source-Durchgangswiderstand: 0.106ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2190 шт: термін постачання 21-31 дні (днів) |
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GAN140-650FBEZ | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Power dissipation: 113W Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 2500 шт | товар відсутній | |||||||||||||||
GAN140-650FBEZ | Nexperia | GaN FETs MOS DISCRETES | на замовлення 2314 шт: термін постачання 21-30 дні (днів) |
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GAN190-650EBEZ | Nexperia USA Inc. | Description: 650 V, 190 MOHM GALLIUM NITRIDE Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V | на замовлення 2200 шт: термін постачання 21-31 дні (днів) |
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GAN190-650EBEZ | NEXPERIA | Description: NEXPERIA - GAN190-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 11.5 A, 0.138 ohm, 2.8 nC, DFN8080, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 11.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.8nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Drain-Source-Durchgangswiderstand: 0.138ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2303 шт: термін постачання 21-31 дні (днів) |
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GAN190-650EBEZ | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Power dissipation: 125W Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 2500 шт | товар відсутній | |||||||||||||||
GAN190-650EBEZ | NEXPERIA | 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package / SOT8074 | товар відсутній | |||||||||||||||
GAN190-650EBEZ | Nexperia | GaN FETs SOT8074 650V 11.5A FET | на замовлення 2005 шт: термін постачання 21-30 дні (днів) |
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GAN190-650EBEZ | Nexperia USA Inc. | Description: 650 V, 190 MOHM GALLIUM NITRIDE Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V | товар відсутній | |||||||||||||||
GAN190-650EBEZ | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Power dissipation: 125W Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal | товар відсутній | |||||||||||||||
GAN190-650EBEZ | NEXPERIA | Description: NEXPERIA - GAN190-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 11.5 A, 0.138 ohm, 2.8 nC, DFN8080, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 11.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.8nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Drain-Source-Durchgangswiderstand: 0.138ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2303 шт: термін постачання 21-31 дні (днів) |
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GAN190-650FBEZ | NEXPERIA | Description: NEXPERIA - GAN190-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 11.5 A, 0.138 ohm, 2.8 nC, DFN5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 11.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.8nC Bauform - Transistor: DFN5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.138ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2372 шт: термін постачання 21-31 дні (днів) |
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GAN190-650FBEZ | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Power dissipation: 125W Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 2500 шт | товар відсутній | |||||||||||||||
GAN190-650FBEZ | NEXPERIA | 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN5 mm x 6 mm package / SOT8075 | товар відсутній | |||||||||||||||
GAN190-650FBEZ | Nexperia | GaN FETs MOS DISCRETES | на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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GAN190-650FBEZ | Nexperia USA Inc. | Description: 650 V, 190 MOHM GALLIUM NITRIDE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V | на замовлення 1908 шт: термін постачання 21-31 дні (днів) |
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GAN190-650FBEZ | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Power dissipation: 125W Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal | товар відсутній | |||||||||||||||
GAN190-650FBEZ | NEXPERIA | Description: NEXPERIA - GAN190-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 11.5 A, 0.138 ohm, 2.8 nC, DFN5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 11.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.8nC Bauform - Transistor: DFN5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.138ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2372 шт: термін постачання 21-31 дні (днів) |
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GAN190-650FBEZ | Nexperia USA Inc. | Description: 650 V, 190 MOHM GALLIUM NITRIDE Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V | товар відсутній | |||||||||||||||
GAN200U-A0U-6060200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN200U-A0U-6060500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN20LU-A0U-6120200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN20LU-A0U-6120500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN20LU-S22-6180120 | Belden | 934889125 | товар відсутній | |||||||||||||||
GAN20LU-S24-6060700 | Belden | 6731 | товар відсутній | |||||||||||||||
GAN210U-A0U-6030200 | Hirschmann | Sensor Cables / Actuator Cables | на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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GAN210U-A0U-6030500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN210U-A0U-6030500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN220U-A0U-2260500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN220U-A0U-2260500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN220U-A0U-2260500 | Belden | Valve Connectors, Type A, Overmolded Female, Cable Assembly | товар відсутній | |||||||||||||||
GAN220U-A0U-2261000 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN220U-A0U-6030200 | Belden | Valve Access Cable Socket Polyamide Black | товар відсутній | |||||||||||||||
GAN220U-A0U-6030200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN220U-A0U-6030500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN220U-A0U-6030500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-A0U-2050200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-A0U-2050500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-A0U-2051000 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-A0U-2120500 | Belden | 11353 | товар відсутній | |||||||||||||||
GAN22LU-A0U-2260500 | Belden | Valve Connectors, Type A, Overmolded Female, Cable Assembly | товар відсутній | |||||||||||||||
GAN22LU-A0U-6090030 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-A0U-6090200 | HIRSCHMANN | Description: HIRSCHMANN - GAN22LU-A0U-6090200 - RECTANGULAR CONN, RCPT, 2+2PE, SCREW Kontaktüberzug: - Kontaktausführung: Socket Kontaktmaterial: Brass Ausführung: Receptacle Steckverbindermontage: Cable Mount Steckverbindergehäusegröße: - Anzahl der Kontakte: 4 Produktpalette: GDM Series Kontaktanschluss: Screw Anzahl der Reihen: - Rastermaß: - SVHC: No SVHC (19-Jan-2021) | товар відсутній | |||||||||||||||
GAN22LU-A0U-6090200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-A0U-6090500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-A0U-6091000 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-D24-2120200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-D24-2120500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-D24-2121000 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-D24-2260200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-D24-2260500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-D24-2261000 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L11-2260200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L11-2260500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L11-2261000 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L11-6030200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L11-6030500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L11-6030500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L11-6090200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L11-6090500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L14-2120200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L14-2260200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L14-2260500 | Hirschmann | Sensor Cables / Actuator Cables | на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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GAN22LU-L14-2261000 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L14-2261000 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L14-6030200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L14-6030275 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L14-6030500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L14-6090200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L14-6090500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L1Y-2120200 | Belden | Valve Connectors, Type A, Overmolded Female, Cable Assembly | на замовлення 400 шт: термін постачання 21-31 дні (днів) | |||||||||||||||
GAN22LU-L1Y-2120200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L1Y-2120500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L1Y-2121000 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L1Y-2260200 | Belden | Valve Connectors, Type A, Overmolded Female, Cable Assembly | товар відсутній | |||||||||||||||
GAN22LU-L1Y-6030200 | Lumberg Automation / Hirschmann | Fixed Inductors AEC-Q200 MLCI 0603(0201) 2.9nH 0.3nH | товар відсутній | |||||||||||||||
GAN22LU-L1Y-6030500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L1Y-6090200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-L1Y-6090200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-2120200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-2120500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-2122000 | Belden | 21081 | товар відсутній | |||||||||||||||
GAN22LU-S24-2260200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-2260200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-2260300 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-2260500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-2261000 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-6030200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-6030500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-6030500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-6090200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-6090200-10H | Hirschmann | Sensor Cables / Actuator Cables | на замовлення 175 шт: термін постачання 21-30 дні (днів) |
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GAN22LU-S24-6090250 | Belden | 8940 | товар відсутній | |||||||||||||||
GAN22LU-S24-6090500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-6090500-10H | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-6090500-1UC | Belden | GAN22LU-S24-6090500-1UC | товар відсутній | |||||||||||||||
GAN22LU-S24-6090700 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-6091000 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-6091000 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-6091200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-S24-6091500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V21-2120200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V21-2120500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V21-2260200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V21-2260500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V21-2261000 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V21-6030200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V21-6030500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V21-6090200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V21-6090500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V24-2120200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V24-2120500 | Hirschmann | Sensor Cables / Actuator Cables | на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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GAN22LU-V24-2260060 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V24-2260200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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GAN22LU-V24-2261000 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V24-2261500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V24-2262000 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V2Y-2260500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V2Y-6030200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V2Y-6030500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V2Y-6090030 | Belden | 9151 | товар відсутній | |||||||||||||||
GAN22LU-V2Y-6090150 | Belden | Valve Access Connector Polyamide Gray | товар відсутній | |||||||||||||||
GAN22LU-V2Y-6090200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN22LU-V2Y-6090500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN30010EU | Amphenol | MOBILE ANTENNA FOR GSM, AMP,ETACS CELLUAR PHONE 50 OHMS | товар відсутній | |||||||||||||||
GAN30018EU | Amphenol | ANTENNA FOR GSM | товар відсутній | |||||||||||||||
GAN30048EU | Amphenol | ANTENNA FOR GSM | товар відсутній | |||||||||||||||
GAN30052EU | Amphenol | CONNECTORS RF connectors | товар відсутній | |||||||||||||||
GAN30060EU | Amphenol | Gsm Flat Antenna Triple Band, Mmcx Connector 50 Ohm | товар відсутній | |||||||||||||||
GAN30070EU | Amphenol | Antenna GPS 2dBi Gain | товар відсутній | |||||||||||||||
GAN30084EU | Amphenol | GAN30084EU | на замовлення 1694 шт: термін постачання 21-31 дні (днів) |
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GAN30138EU | Amphenol | Antenna GPS 960MHz/1880MHz/2100MHz | товар відсутній | |||||||||||||||
GAN310U-A0U-6040200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN310U-A0U-6040500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN310U-A0U-6040500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN310U-A0U-6101000-1UZ | Belden | 20247 | товар відсутній | |||||||||||||||
GAN31LU-A0U-6040500 | Belden | Valve Access Connector Polyamide Gray | товар відсутній | |||||||||||||||
GAN31LU-A0U-6100200 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN31LU-A0U-6100200-10H | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN31LU-A0U-6100500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN31LU-A0U-6100500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN31LU-A0U-6100500 | Belden | Valve Access Connector Polyamide Gray | товар відсутній | |||||||||||||||
GAN31LU-A0U-6101000 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN31LU-A0U-7430200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN31LU-P1J-6110200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN31LU-P1J-6110500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN31LU-P1M-6110200 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN31LU-P1M-6110500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN31LU-P2M-2280500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN3R2-100CBEAZ | Nexperia | GaN FETs MOS DISCRETES | на замовлення 2392 шт: термін постачання 21-30 дні (днів) |
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GAN3R2-100CBEAZ | Nexperia USA Inc. | Description: 100 V, 3.2 MOHM GALLIUM NITRIDE Packaging: Tape & Reel (TR) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V Power Dissipation (Max): 394W Vgs(th) (Max) @ Id: 2.5V @ 9mA Supplier Device Package: 8-WLCSP (3.5x2.13) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V | товар відсутній | |||||||||||||||
GAN3R2-100CBEAZ | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 230A Power dissipation: 394W Case: WLCSP8 Gate-source voltage: -4...6V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 12nC Kind of package: tape Kind of channel: enhanced | товар відсутній | |||||||||||||||
GAN3R2-100CBEAZ | NEXPERIA | Description: NEXPERIA - GAN3R2-100CBEAZ - Galliumnitrid (GaN)-Transistor, 100 V, 60 A, 0.0024 ohm, 9.2 nC, WLCSP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 9.2nC Bauform - Transistor: WLCSP Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0024ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 444 шт: термін постачання 21-31 дні (днів) |
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GAN3R2-100CBEAZ | NEXPERIA | Trans MOSFET N-CH GaN 100V 60A 8-Pin WLCSP T/R | на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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GAN3R2-100CBEAZ | Nexperia | Trans MOSFET N-CH GaN 100V 60A 8-Pin WLCSP T/R | товар відсутній | |||||||||||||||
GAN3R2-100CBEAZ | Nexperia USA Inc. | Description: 100 V, 3.2 MOHM GALLIUM NITRIDE Packaging: Cut Tape (CT) Part Status: Active Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V Power Dissipation (Max): 394W Vgs(th) (Max) @ Id: 2.5V @ 9mA Supplier Device Package: 8-WLCSP (3.5x2.13) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V | на замовлення 806 шт: термін постачання 21-31 дні (днів) |
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GAN3R2-100CBEAZ | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 230A Power dissipation: 394W Case: WLCSP8 Gate-source voltage: -4...6V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 12nC Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1500 шт | товар відсутній | |||||||||||||||
GAN3R2-100CBEAZ | NEXPERIA | Description: NEXPERIA - GAN3R2-100CBEAZ - Galliumnitrid (GaN)-Transistor, 100 V, 60 A, 0.0024 ohm, 9.2 nC, WLCSP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 9.2nC Bauform - Transistor: WLCSP Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0024ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 444 шт: термін постачання 21-31 дні (днів) |
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GAN3ZLU-A0U-6100500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN3ZLU-P2M-2280500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN3ZLU-P2M-2281500 | Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN3ZLU-P2M-2590500 | Lumberg Automation / Hirschmann | Sensor Cables / Actuator Cables | товар відсутній | |||||||||||||||
GAN7R0-150LBEZ | Nexperia | GaN FETs MOS DISCRETES | на замовлення 3205 шт: термін постачання 21-30 дні (днів) |
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GAN7R0-150LBEZ | NEXPERIA | Description: NEXPERIA - GAN7R0-150LBEZ - Galliumnitrid (GaN)-Transistor, 150 V, 28 A, 0.0056 ohm, 7.6 nC, FCLGA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 28A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 7.6nC Bauform - Transistor: FCLGA Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0056ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1993 шт: термін постачання 21-31 дні (днів) |
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GAN7R0-150LBEZ | Nexperia USA Inc. | Description: 150 V, 7 MOHM GALLIUM NITRIDE (G Packaging: Tape & Reel (TR) Package / Case: 3-VLGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 5V Power Dissipation (Max): 28W Vgs(th) (Max) @ Id: 2.1V @ 5mA Supplier Device Package: 3-FCLGA (3.2x2.2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 85 V | товар відсутній | |||||||||||||||
GAN7R0-150LBEZ | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 150V Drain current: 28A Pulsed drain current: 120A Power dissipation: 28W Case: FCLGA3 Gate-source voltage: -4...6V On-state resistance: 7mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: tape Kind of channel: enhanced кількість в упаковці: 2500 шт | товар відсутній | |||||||||||||||
GAN7R0-150LBEZ | NEXPERIA | Description: NEXPERIA - GAN7R0-150LBEZ - Galliumnitrid (GaN)-Transistor, 150 V, 28 A, 0.0056 ohm, 7.6 nC, FCLGA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 28A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 7.6nC Bauform - Transistor: FCLGA Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0056ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 1993 шт: термін постачання 21-31 дні (днів) |
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GAN7R0-150LBEZ | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 150V Drain current: 28A Pulsed drain current: 120A Power dissipation: 28W Case: FCLGA3 Gate-source voltage: -4...6V On-state resistance: 7mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: tape Kind of channel: enhanced | товар відсутній | |||||||||||||||
GAN7R0-150LBEZ | Nexperia USA Inc. | Description: 150 V, 7 MOHM GALLIUM NITRIDE (G Packaging: Cut Tape (CT) Package / Case: 3-VLGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 5V Power Dissipation (Max): 28W Vgs(th) (Max) @ Id: 2.1V @ 5mA Supplier Device Package: 3-FCLGA (3.2x2.2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 85 V | на замовлення 3998 шт: термін постачання 21-31 дні (днів) |
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GAN7R0-150LBEZ | NEXPERIA | Trans MOSFET N-CH GaN 150V 28A T/R | товар відсутній | |||||||||||||||
GANB4R8-040CBAZ | Nexperia USA Inc. | Description: GANB4R8-040CBA/SOT8086/WLCSP22 Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): 40V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 20 V Package / Case: 22-UFBGA, WLCSP Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 5V Power Dissipation (Max): 13W (Ta) Supplier Device Package: 22-WLCSP (2.1x2.1) | на замовлення 2446 шт: термін постачання 21-31 дні (днів) |
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GANB4R8-040CBAZ | Nexperia USA Inc. | Description: GANB4R8-040CBA/SOT8086/WLCSP22 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): 40V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 20 V Package / Case: 22-UFBGA, WLCSP Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 5V Power Dissipation (Max): 13W (Ta) Supplier Device Package: 22-WLCSP (2.1x2.1) | товар відсутній | |||||||||||||||
GANB4R8-040CBAZ | Nexperia | GaN FETs GANB4R8-040CBA/SOT8086/WLCSP22 | на замовлення 2500 шт: термін постачання 118-127 дні (днів) |
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GANB4R8-040CBAZ | NEXPERIA | Description: NEXPERIA - GANB4R8-040CBAZ - Galliumnitrid (GaN)-Transistor, 20 A, 15.8 nC, WLCSP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: -V rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 15.8nC Bauform - Transistor: WLCSP Anzahl der Pins: 22Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: -ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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GANE3R9-150QBAZ | Nexperia | Gallium Nitride (GaN) FET | товар відсутній | |||||||||||||||
GANE3R9-150QBAZ | Nexperia | GaN FETs GANE3R9-150QBA/SOT8091/VQFN7 | на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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GANE3R9-150QBAZ | Nexperia USA Inc. | Description: GANE3R9-150QBA/SOT8091/VQFN7 Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Power Dissipation (Max): 65W (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V Package / Case: 25-PowerVFQFN Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.1V @ 12mA Supplier Device Package: 25-VQFN (4x6) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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GANE3R9-150QBAZ | NEXPERIA | Description: NEXPERIA - GANE3R9-150QBAZ - Galliumnitrid (GaN)-Transistor, 150 V, 100 A, 0.0039 ohm, 20 nC, VQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 20nC Bauform - Transistor: VQFN Anzahl der Pins: 25Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0039ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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GANE3R9-150QBAZ | NEXPERIA | GANE3R9-150QBA/SOT8091/VQFN7 | товар відсутній | |||||||||||||||
GANE3R9-150QBAZ | Nexperia USA Inc. | Description: GANE3R9-150QBA/SOT8091/VQFN7 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Power Dissipation (Max): 65W (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V Package / Case: 25-PowerVFQFN Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.1V @ 12mA Supplier Device Package: 25-VQFN (4x6) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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GANE3R9-150QBAZ | Nexperia | Gallium Nitride (GaN) FET | товар відсутній | |||||||||||||||
GANGPRO-430(XS) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; TEXAS INSTRUMENTS; USB; 20MHz Type of ICs programmer: microcontrollers Associated circuits: TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: USB Interface: BSL; JTAG; SBW Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: MSP430 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps | на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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GANGPRO-430(XS) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; TEXAS INSTRUMENTS; USB; 20MHz Type of ICs programmer: microcontrollers Associated circuits: TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: USB Interface: BSL; JTAG; SBW Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: MSP430 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps кількість в упаковці: 1 шт | на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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GANGPRO-ARM(X2S) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; RJ45 Ethernet,USB; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: ACTIVE-SEMI; ANALOG DEVICES; CYPRESS; MARVELL; MAXIM INTEGRATED; MICROCHIP; NORDIC SEMICONDUCTOR; NXP; RENESAS; SILERGY; SILICON LABS; STMicroelectronics; TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: RJ45 Ethernet; USB Interface: cJTAG; JTAG; SWD Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; RJ45; USB B Producer guarantee (months): 12 Kind of architecture: Chipcon; Cortex M3; Cortex M4; Cortex M7; Cortex M0; MSP432 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
GANGPRO-ARM(X2S) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; RJ45 Ethernet,USB; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: ACTIVE-SEMI; ANALOG DEVICES; CYPRESS; MARVELL; MAXIM INTEGRATED; MICROCHIP; NORDIC SEMICONDUCTOR; NXP; RENESAS; SILERGY; SILICON LABS; STMicroelectronics; TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: RJ45 Ethernet; USB Interface: cJTAG; JTAG; SWD Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; RJ45; USB B Producer guarantee (months): 12 Kind of architecture: Chipcon; Cortex M3; Cortex M4; Cortex M7; Cortex M0; MSP432 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps | товар відсутній | |||||||||||||||
GANGPRO-ARM(XS) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; USB; 14pin,USB B; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: ACTIVE-SEMI; ANALOG DEVICES; CYPRESS; MARVELL; MAXIM INTEGRATED; MICROCHIP; NORDIC SEMICONDUCTOR; NXP; RENESAS; SILERGY; SILICON LABS; STMicroelectronics; TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: USB Interface: cJTAG; JTAG; SWD Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: Cortex M3; Cortex M4; Cortex M7; Cortex M0; MSP432 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps кількість в упаковці: 1 шт | на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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GANGPRO-ARM(XS) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; USB; 14pin,USB B; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: ACTIVE-SEMI; ANALOG DEVICES; CYPRESS; MARVELL; MAXIM INTEGRATED; MICROCHIP; NORDIC SEMICONDUCTOR; NXP; RENESAS; SILERGY; SILICON LABS; STMicroelectronics; TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: USB Interface: cJTAG; JTAG; SWD Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: Cortex M3; Cortex M4; Cortex M7; Cortex M0; MSP432 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps | на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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GANGPRO-ARM-1V | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; USB; 14pin,USB B Type of ICs programmer: microcontrollers Associated circuits: ACTIVE-SEMI; ANALOG DEVICES; CYPRESS; MARVELL; MAXIM INTEGRATED; MICROCHIP; NORDIC SEMICONDUCTOR; NXP; RENESAS; SILERGY; SILICON LABS; STMicroelectronics; TEXAS INSTRUMENTS Programmers and development kits features: support for one MCU vendor Communication with PC: USB Interface: cJTAG; JTAG; SWD Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: Cortex M3; Cortex M4; Cortex M7; Cortex M0; MSP432 Operating system: Windows 7; Windows 8; Windows 10; Windows 2000; Windows XP | на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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GANGPRO-ARM-1V | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; USB; 14pin,USB B Type of ICs programmer: microcontrollers Associated circuits: ACTIVE-SEMI; ANALOG DEVICES; CYPRESS; MARVELL; MAXIM INTEGRATED; MICROCHIP; NORDIC SEMICONDUCTOR; NXP; RENESAS; SILERGY; SILICON LABS; STMicroelectronics; TEXAS INSTRUMENTS Programmers and development kits features: support for one MCU vendor Communication with PC: USB Interface: cJTAG; JTAG; SWD Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: Cortex M3; Cortex M4; Cortex M7; Cortex M0; MSP432 Operating system: Windows 7; Windows 8; Windows 10; Windows 2000; Windows XP кількість в упаковці: 1 шт | на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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GANGPRO-ARM-1V(X2S) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; RJ45 Ethernet,USB; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: ACTIVE-SEMI; ANALOG DEVICES; CYPRESS; MARVELL; MAXIM INTEGRATED; MICROCHIP; NORDIC SEMICONDUCTOR; NXP; RENESAS; SILERGY; SILICON LABS; STMicroelectronics; TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation; support for one MCU vendor Communication with PC: RJ45 Ethernet; USB Interface: cJTAG; JTAG; SWD Kit contents: adapter; programmer; ribbon cable; USB A - USB B cable Kind of connector: 14pin; RJ45; USB B Producer guarantee (months): 12 Kind of architecture: Chipcon; Cortex M3; Cortex M4; Cortex M7; Cortex M0; MSP432 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
GANGPRO-ARM-1V(X2S) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; RJ45 Ethernet,USB; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: ACTIVE-SEMI; ANALOG DEVICES; CYPRESS; MARVELL; MAXIM INTEGRATED; MICROCHIP; NORDIC SEMICONDUCTOR; NXP; RENESAS; SILERGY; SILICON LABS; STMicroelectronics; TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation; support for one MCU vendor Communication with PC: RJ45 Ethernet; USB Interface: cJTAG; JTAG; SWD Kit contents: adapter; programmer; ribbon cable; USB A - USB B cable Kind of connector: 14pin; RJ45; USB B Producer guarantee (months): 12 Kind of architecture: Chipcon; Cortex M3; Cortex M4; Cortex M7; Cortex M0; MSP432 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps | товар відсутній | |||||||||||||||
GANGPRO-ARM-1V(XS) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; USB; 14pin,USB B; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: ACTIVE-SEMI; ANALOG DEVICES; CYPRESS; MARVELL; MAXIM INTEGRATED; MICROCHIP; NORDIC SEMICONDUCTOR; NXP; RENESAS; SILERGY; SILICON LABS; STMicroelectronics; TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation; support for one MCU vendor Communication with PC: USB Interface: cJTAG; JTAG; SWD Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: Cortex M3; Cortex M4; Cortex M7; Cortex M0; MSP432 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps | на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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GANGPRO-ARM-1V(XS) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; USB; 14pin,USB B; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: ACTIVE-SEMI; ANALOG DEVICES; CYPRESS; MARVELL; MAXIM INTEGRATED; MICROCHIP; NORDIC SEMICONDUCTOR; NXP; RENESAS; SILERGY; SILICON LABS; STMicroelectronics; TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation; support for one MCU vendor Communication with PC: USB Interface: cJTAG; JTAG; SWD Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: Cortex M3; Cortex M4; Cortex M7; Cortex M0; MSP432 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps кількість в упаковці: 1 шт | на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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GANGPRO-CC | Texas Instruments | FLASH GANG PROGRAMMER | товар відсутній | |||||||||||||||
GANGPRO-CC(X2S) | ELPROTRONIC | Category: Programmers Description: Programmer: for radio IC's; TEXAS INSTRUMENTS; 14pin,RJ45,USB B Kit contents: adapter x2; IDC 14pin cable; programmer; splitter 6x IDC 14pin; USB A - USB B cable Associated circuits: TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: RJ45 Ethernet; USB Kind of connector: 14pin; RJ45; USB B Kind of architecture: SimpleLink Transfer rate: 1Mbps Type of ICs programmer: for radio IC's Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Producer guarantee (months): 12 Clock frequency: 20MHz кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
GANGPRO-CC(X2S) | ELPROTRONIC | Category: Programmers Description: Programmer: for radio IC's; TEXAS INSTRUMENTS; 14pin,RJ45,USB B Kit contents: adapter x2; IDC 14pin cable; programmer; splitter 6x IDC 14pin; USB A - USB B cable Associated circuits: TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: RJ45 Ethernet; USB Kind of connector: 14pin; RJ45; USB B Kind of architecture: SimpleLink Transfer rate: 1Mbps Type of ICs programmer: for radio IC's Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Producer guarantee (months): 12 Clock frequency: 20MHz | товар відсутній | |||||||||||||||
GANGPRO-CC(XS) | ELPROTRONIC | Category: Programmers Description: Programmer: for radio IC's; TEXAS INSTRUMENTS; USB; 14pin,USB B Type of ICs programmer: for radio IC's Associated circuits: TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: USB Kit contents: adapter x2; IDC 14pin cable; programmer; splitter 6x IDC 14pin; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: SimpleLink Operating system: Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
GANGPRO-CC(XS) | ELPROTRONIC | Category: Programmers Description: Programmer: for radio IC's; TEXAS INSTRUMENTS; USB; 14pin,USB B Type of ICs programmer: for radio IC's Associated circuits: TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: USB Kit contents: adapter x2; IDC 14pin cable; programmer; splitter 6x IDC 14pin; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: SimpleLink Operating system: Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps | товар відсутній | |||||||||||||||
GANGPRO-CC-STD | Elprotronic | Programmers - Processor Based GangPro-CC FOR TI CHIPCON MCU | товар відсутній | |||||||||||||||
GANGPRO-CC-STD | Elprotronic Inc. | Description: GANGPRO-CC-STD Packaging: Bulk For Use With/Related Products: MCU Type: Programmer (In-Circuit/In-System, Gang) Contents: Board(s), Cable(s), Accessories Part Status: Last Time Buy | на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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GANGPRO-M(X2S) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; RJ45 Ethernet,USB; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: CYPRESS; GIGADEVICE; MACRONIX; MICROCHIP; MICRON TECHNOLOGY; RENESAS; STMicroelectronics; WINBOND Programmers and development kits features: galvanic separation Communication with PC: RJ45 Ethernet; USB Interface: JTAG; PDI; QSPI; SPI; SWIM; TPI; UPDI Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; RJ45; USB B Producer guarantee (months): 12 Kind of architecture: RL78; STM8 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
GANGPRO-M(X2S) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; RJ45 Ethernet,USB; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: CYPRESS; GIGADEVICE; MACRONIX; MICROCHIP; MICRON TECHNOLOGY; RENESAS; STMicroelectronics; WINBOND Programmers and development kits features: galvanic separation Communication with PC: RJ45 Ethernet; USB Interface: JTAG; PDI; QSPI; SPI; SWIM; TPI; UPDI Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; RJ45; USB B Producer guarantee (months): 12 Kind of architecture: RL78; STM8 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps | товар відсутній | |||||||||||||||
GANGPRO-M(XS) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; USB; 14pin,USB B; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: CYPRESS; GIGADEVICE; MACRONIX; MICROCHIP; MICRON TECHNOLOGY; RENESAS; STMicroelectronics; WINBOND Programmers and development kits features: galvanic separation Communication with PC: USB Interface: JTAG; PDI; QSPI; SPI; SWIM; TPI; UPDI Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: RL78; STM8 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
GANGPRO-M(XS) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; USB; 14pin,USB B; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: CYPRESS; GIGADEVICE; MACRONIX; MICROCHIP; MICRON TECHNOLOGY; RENESAS; STMicroelectronics; WINBOND Programmers and development kits features: galvanic separation Communication with PC: USB Interface: JTAG; PDI; QSPI; SPI; SWIM; TPI; UPDI Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: RL78; STM8 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps | товар відсутній | |||||||||||||||
GangPro-M-1V (XS) | Elprotronic | Programmers - Processor Based | товар відсутній | |||||||||||||||
GANGPRO-M-1V(X2S) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; RJ45 Ethernet,USB; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: CYPRESS; GIGADEVICE; MACRONIX; MICROCHIP; MICRON TECHNOLOGY; RENESAS; STMicroelectronics; WINBOND Programmers and development kits features: galvanic separation; support for one MCU vendor Communication with PC: RJ45 Ethernet; USB Interface: JTAG; PDI; QSPI; SPI; SWIM; TPI; UPDI Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; RJ45; USB B Producer guarantee (months): 12 Kind of architecture: RL78; STM8 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps | товар відсутній | |||||||||||||||
GANGPRO-M-1V(X2S) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; RJ45 Ethernet,USB; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: CYPRESS; GIGADEVICE; MACRONIX; MICROCHIP; MICRON TECHNOLOGY; RENESAS; STMicroelectronics; WINBOND Programmers and development kits features: galvanic separation; support for one MCU vendor Communication with PC: RJ45 Ethernet; USB Interface: JTAG; PDI; QSPI; SPI; SWIM; TPI; UPDI Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; RJ45; USB B Producer guarantee (months): 12 Kind of architecture: RL78; STM8 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
GANGPRO-M-1V(XS) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; USB; 14pin,USB B; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: CYPRESS; GIGADEVICE; MACRONIX; MICROCHIP; MICRON TECHNOLOGY; RENESAS; STMicroelectronics; WINBOND Programmers and development kits features: galvanic separation; support for one MCU vendor Communication with PC: USB Interface: JTAG; PDI; QSPI; SPI; SWIM; TPI; UPDI Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: RL78; STM8 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
GANGPRO-M-1V(XS) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; USB; 14pin,USB B; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: CYPRESS; GIGADEVICE; MACRONIX; MICROCHIP; MICRON TECHNOLOGY; RENESAS; STMicroelectronics; WINBOND Programmers and development kits features: galvanic separation; support for one MCU vendor Communication with PC: USB Interface: JTAG; PDI; QSPI; SPI; SWIM; TPI; UPDI Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: RL78; STM8 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps | товар відсутній | |||||||||||||||
GANGPRO-X | Elprotronic Inc. | Description: GANGPRO-X | на замовлення 2 шт: термін постачання 21-31 дні (днів) | |||||||||||||||
GANGPRO-X | Elprotronic | Programmers - Processor Based Flash and Gang Programmer for All MCU supported by Elprotronic. I combines all FashPro and GangPro ( FP430, GP430, FP-2000, FP-CC, GP-CC, FP-ARM, GP-ARM, FP-M). Access to GUI, DLL, serialization and script file. USB-FPA 6.1 a | товар відсутній | |||||||||||||||
GANGPRO-X (X2S) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; RJ45 Ethernet,USB; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: ACTIVE-SEMI; ANALOG DEVICES; Atmel; CYPRESS; FREESCALE; MARVELL; MAXIM INTEGRATED; MICROCHIP; NORDIC SEMICONDUCTOR; NXP; RENESAS; SILERGY; SILICON LABS; STMicroelectronics; TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: RJ45 Ethernet; USB Interface: BSL; cJTAG; JTAG; PDI; QSPI; SBW; SPI; SWD; SWIM; TPI; UPDI Kit contents: adapter x5; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; RJ45; USB B Producer guarantee (months): 12 Kind of architecture: ARM; AVR; C2000; EFM32; EFR32; FM3; FM4; FM0+; MSP430; MSP432; PIC; PSoC4; PSoC 5LP; PSoC 6; SimpleLink; STM8; STM32 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps | товар відсутній | |||||||||||||||
GANGPRO-X (X2S) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; RJ45 Ethernet,USB; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: ACTIVE-SEMI; ANALOG DEVICES; Atmel; CYPRESS; FREESCALE; MARVELL; MAXIM INTEGRATED; MICROCHIP; NORDIC SEMICONDUCTOR; NXP; RENESAS; SILERGY; SILICON LABS; STMicroelectronics; TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: RJ45 Ethernet; USB Interface: BSL; cJTAG; JTAG; PDI; QSPI; SBW; SPI; SWD; SWIM; TPI; UPDI Kit contents: adapter x5; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; RJ45; USB B Producer guarantee (months): 12 Kind of architecture: ARM; AVR; C2000; EFM32; EFR32; FM3; FM4; FM0+; MSP430; MSP432; PIC; PSoC4; PSoC 5LP; PSoC 6; SimpleLink; STM8; STM32 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
GANGPRO-X (XS) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; USB; 14pin,USB B; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: ACTIVE-SEMI; ANALOG DEVICES; Atmel; CYPRESS; FREESCALE; MARVELL; MAXIM INTEGRATED; MICROCHIP; NORDIC SEMICONDUCTOR; NXP; RENESAS; SILERGY; SILICON LABS; STMicroelectronics; TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: USB Interface: BSL; cJTAG; JTAG; PDI; QSPI; SBW; SPI; SWD; SWIM; TPI; UPDI Kit contents: adapter x5; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: AVR; C2000; EFM32; EFR32; FM3; FM4; FM0+; MSP430; MSP432; PIC; PSoC4; PSoC 5LP; PSoC 6; SimpleLink; STM8; STM32 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps | товар відсутній | |||||||||||||||
GANGPRO-X (XS) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; USB; 14pin,USB B; 20MHz; 1Mbps Type of ICs programmer: microcontrollers Associated circuits: ACTIVE-SEMI; ANALOG DEVICES; Atmel; CYPRESS; FREESCALE; MARVELL; MAXIM INTEGRATED; MICROCHIP; NORDIC SEMICONDUCTOR; NXP; RENESAS; SILERGY; SILICON LABS; STMicroelectronics; TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: USB Interface: BSL; cJTAG; JTAG; PDI; QSPI; SBW; SPI; SWD; SWIM; TPI; UPDI Kit contents: adapter x5; IDC 14pin cable; programmer; USB A - USB B cable Kind of connector: 14pin; USB B Producer guarantee (months): 12 Kind of architecture: AVR; C2000; EFM32; EFR32; FM3; FM4; FM0+; MSP430; MSP432; PIC; PSoC4; PSoC 5LP; PSoC 6; SimpleLink; STM8; STM32 Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Clock frequency: 20MHz Transfer rate: 1Mbps кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
GANGPRO430 (X2S) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; TEXAS INSTRUMENTS; 16MHz; 1Mbps Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Associated circuits: TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: RJ45 Ethernet; USB Interface: BSL; JTAG; SBW Kind of connector: 14pin; RJ45; USB B Kind of architecture: MSP430 Transfer rate: 1Mbps Type of ICs programmer: microcontrollers Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Producer guarantee (months): 12 Clock frequency: 16MHz кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
GANGPRO430 (X2S) | ELPROTRONIC | Category: Programmers Description: Programmer: microcontrollers; TEXAS INSTRUMENTS; 16MHz; 1Mbps Kit contents: adapter; IDC 14pin cable; programmer; USB A - USB B cable Associated circuits: TEXAS INSTRUMENTS Programmers and development kits features: galvanic separation Communication with PC: RJ45 Ethernet; USB Interface: BSL; JTAG; SBW Kind of connector: 14pin; RJ45; USB B Kind of architecture: MSP430 Transfer rate: 1Mbps Type of ICs programmer: microcontrollers Operating system: Linux; Windows 7; Windows 8; Windows 10; Windows XP Producer guarantee (months): 12 Clock frequency: 16MHz | товар відсутній | |||||||||||||||
GANGSPLITTER | ELPROTRONIC | Category: Programmer accessories Description: Accessories: adapter-splitter; IDC14 Related items: USB-MSP430-FPA-GJ; USB-MSP430-FPA-GJB; XS-GP-430 Type of accessories for development kits: adapter - splitter Kind of connector: IDC14 Kit contents: adapter; IDC 14pin x6 cable x6 | товар відсутній | |||||||||||||||
GANGSPLITTER | ELPROTRONIC | Category: Programmer accessories Description: Accessories: adapter-splitter; IDC14 Related items: USB-MSP430-FPA-GJ; USB-MSP430-FPA-GJB; XS-GP-430 Type of accessories for development kits: adapter - splitter Kind of connector: IDC14 Kit contents: adapter; IDC 14pin x6 cable x6 кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
GANGSPLITTER-ARM | ELPROTRONIC | Category: Programmer accessories Description: Accessories: adapter-splitter; Interface: cJTAG,JTAG,SWD Related items: GP-ARM; X2S-GP-ARM; XS-GP-ARM Type of accessories for development kits: adapter - splitter Kind of connector: IDC14; IDC20 Kit contents: adapter; IDC 14pin x6 cable x6 Interface: cJTAG; JTAG; SWD кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
GANGSPLITTER-ARM | ELPROTRONIC | Category: Programmer accessories Description: Accessories: adapter-splitter; Interface: cJTAG,JTAG,SWD Related items: GP-ARM; X2S-GP-ARM; XS-GP-ARM Type of accessories for development kits: adapter - splitter Kind of connector: IDC14; IDC20 Kit contents: adapter; IDC 14pin x6 cable x6 Interface: cJTAG; JTAG; SWD | товар відсутній |