Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (354676) > Сторінка 1588 з 5912

Обрати Сторінку:   [  << Попередня Сторінка ]  1 591 1182 1583 1584 1585 1586 1587 1588 1589 1590 1591 1592 1593 1773 2364 2955 3546 4137 4728 5319 5910 5912  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
SMDB03Ce3/TR7 SMDB03Ce3/TR7 Microchip Technology 132313-smda-datasheet Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 300pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
товар відсутній
SMDB03Ce3/TR7 SMDB03Ce3/TR7 Microchip Technology 132313-smda-datasheet Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 300pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 495 шт:
термін постачання 21-31 дні (днів)
3+154.85 грн
100+ 138.62 грн
Мінімальне замовлення: 3
SMDA03-6E3/TR7 SMDA03-6E3/TR7 Microchip Technology SMDA03-24-6.pdf Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+80.87 грн
Мінімальне замовлення: 500
SMDA03-6E3/TR7 SMDA03-6E3/TR7 Microchip Technology SMDA03-24-6.pdf Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 1396 шт:
термін постачання 21-31 дні (днів)
4+86.37 грн
100+ 77.88 грн
Мінімальне замовлення: 4
AT24C01A-10TU-1.8-T AT24C01A-10TU-1.8-T Microchip Technology doc0180.pdf Description: IC EEPROM 1KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10SC-2.7 AT24C01A-10SC-2.7 Microchip Technology AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10SI-2.5 AT24C01A-10SI-2.5 Microchip Technology AT24C01A,02,04,08,16 (2001).pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10SC-1.8 AT24C01A-10SC-1.8 Microchip Technology AT24C01A,02,04,08,16 (2001).pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10SC-2.5 AT24C01A-10SC-2.5 Microchip Technology AT24C01A,02,04,08,16 (2001).pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10PC-1.8 AT24C01A-10PC-1.8 Microchip Technology AT24C01A,02,04,08,16 (2001).pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10SC AT24C01A-10SC Microchip Technology AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10PI-2.5 AT24C01A-10PI-2.5 Microchip Technology AT24C01A,02,04,08,16 (2001).pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10PC-2.7 AT24C01A-10PC-2.7 Microchip Technology AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10SI AT24C01A-10SI Microchip Technology AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
MXSMLG7.0A Microchip Technology 10563-msml-datasheet Description: TVS DIODE 7VWM 12VC SMLG
товар відсутній
1N5307UR-1 1N5307UR-1 Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
товар відсутній
JANTXV1N5307UR-1/TR JANTXV1N5307UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
товар відсутній
JANTX1N5307UR-1/TR JANTX1N5307UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
товар відсутній
JAN1N5307UR-1/TR JAN1N5307UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Grade: Military
Qualification: MIL-PRF-19500/463
товар відсутній
1N5307UR-1/TR 1N5307UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
товар відсутній
JANS1N5307UR-1 JANS1N5307UR-1 Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
товар відсутній
JANS1N5307UR-1/TR JANS1N5307UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
товар відсутній
MQ2N5115UB/TR Microchip Technology Description: JFET
товар відсутній
MX2N5114UB/TR MX2N5114UB/TR Microchip Technology Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MV2N5115UB/TR Microchip Technology Description: JFET
товар відсутній
2N5116UA/TR Microchip Technology Description: JFET
товар відсутній
MQ2N5116UB Microchip Technology Description: JFET
товар відсутній
MX2N5114UB MX2N5114UB Microchip Technology Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MQ2N5115UB Microchip Technology Description: JFET
товар відсутній
MQ2N5116UB/TR Microchip Technology Description: JFET
товар відсутній
MX2N5115UB/TR Microchip Technology Description: JFET
товар відсутній
MX2N5116UB Microchip Technology Description: JFET
товар відсутній
MX2N5115UB Microchip Technology Description: JFET
товар відсутній
MQ2N5115 Microchip Technology Description: JFET
товар відсутній
MV2N5116UB Microchip Technology Description: JFET
товар відсутній
MX2N5116UB/TR Microchip Technology Description: JFET
товар відсутній
SY100ELT25ZG-TR SY100ELT25ZG-TR Microchip Technology sy100elt25.pdf Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: ECL
Number of Circuits: 1
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+262.92 грн
Мінімальне замовлення: 1000
SY100ELT25ZG-TR SY100ELT25ZG-TR Microchip Technology sy100elt25.pdf Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: ECL
Number of Circuits: 1
на замовлення 2454 шт:
термін постачання 21-31 дні (днів)
1+347.04 грн
25+ 278.77 грн
100+ 253.18 грн
MXLPLAD18KP14CA Microchip Technology MPLAD18KP7.0A_-_MPLAD18KP200CA.pdf Description: TVS DIODE 14VWM 23.2VC PLAD
товар відсутній
MXPLAD18KP14CA Microchip Technology MPLAD18KP7.0A_-_MPLAD18KP200CA.pdf Description: TVS DIODE 14VWM 23.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 776A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 18000W (18kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MAPLAD7.5KP14CA MAPLAD7.5KP14CA Microchip Technology 132315-plad7-5kp-datasheet Description: TVS DIODE
товар відсутній
MAPLAD18KP14CAE3 Microchip Technology MPLAD18KP7.0A_-_MPLAD18KP200CA.pdf Description: TVS DIODE 14VWM 23.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 776A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 18000W (18kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MXPLAD18KP14AE3 Microchip Technology MPLAD18KP7.0A_-_MPLAD18KP200CA.pdf Description: TVS DIODE 14VWM 23.2VC PLAD
товар відсутній
MECH-SAMPLE-CQ256NHS Microchip Technology Description: MECH-SAMPLE-CQ256NHS
товар відсутній
LG896_DAISY_CHAIN Microchip Technology Description: LG896_DAISY_CHAIN
товар відсутній
LG484_DAISY_CHAIN Microchip Technology Description: LG484_DAISY_CHAIN
товар відсутній
93AA66AT-I/SN 93AA66AT-I/SN Microchip Technology 21795E.pdf Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
товар відсутній
93AA66AT-I/SN 93AA66AT-I/SN Microchip Technology 21795E.pdf Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
12+27.23 грн
25+ 25.48 грн
100+ 24.73 грн
Мінімальне замовлення: 12
93AA56CT-I/SN 93AA56CT-I/SN Microchip Technology 21794G.pdf Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
товар відсутній
93AA56CT-I/SN 93AA56CT-I/SN Microchip Technology 21794G.pdf Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
товар відсутній
JANS2N3737UB/TR JANS2N3737UB/TR Microchip Technology Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
товар відсутній
JAN2N3737UB/TR JAN2N3737UB/TR Microchip Technology Description: TRANS NPN 40V 1.5A 3UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
товар відсутній
JANTX2N3737UB/TR JANTX2N3737UB/TR Microchip Technology Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
товар відсутній
JANTXV2N3737 JANTXV2N3737 Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A TO46-3
товар відсутній
JAN2N3737 JAN2N3737 Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-46-3
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
товар відсутній
JANTX2N3737 Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A TO46
Packaging: Bulk
Package / Case: TO-46-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
товар відсутній
JANS2N3737UB JANS2N3737UB Microchip Technology Description: TRANS NPN 40V 1.5A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
товар відсутній
JANTXV2N3737UB/TR Microchip Technology Description: SMALL-SIGNAL BJT
товар відсутній
2N3737UB/TR 2N3737UB/TR Microchip Technology Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
товар відсутній
JANTXV2N3737UB JANTXV2N3737UB Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
товар відсутній
SMDB03Ce3/TR7 132313-smda-datasheet
SMDB03Ce3/TR7
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 300pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
товар відсутній
SMDB03Ce3/TR7 132313-smda-datasheet
SMDB03Ce3/TR7
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 300pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+154.85 грн
100+ 138.62 грн
Мінімальне замовлення: 3
SMDA03-6E3/TR7 SMDA03-24-6.pdf
SMDA03-6E3/TR7
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
500+80.87 грн
Мінімальне замовлення: 500
SMDA03-6E3/TR7 SMDA03-24-6.pdf
SMDA03-6E3/TR7
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 1396 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+86.37 грн
100+ 77.88 грн
Мінімальне замовлення: 4
AT24C01A-10TU-1.8-T doc0180.pdf
AT24C01A-10TU-1.8-T
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10SC-2.7 AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf
AT24C01A-10SC-2.7
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10SI-2.5 AT24C01A,02,04,08,16 (2001).pdf
AT24C01A-10SI-2.5
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10SC-1.8 AT24C01A,02,04,08,16 (2001).pdf
AT24C01A-10SC-1.8
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10SC-2.5 AT24C01A,02,04,08,16 (2001).pdf
AT24C01A-10SC-2.5
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10PC-1.8 AT24C01A,02,04,08,16 (2001).pdf
AT24C01A-10PC-1.8
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10SC AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf
AT24C01A-10SC
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10PI-2.5 AT24C01A,02,04,08,16 (2001).pdf
AT24C01A-10PI-2.5
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10PC-2.7 AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf
AT24C01A-10PC-2.7
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
AT24C01A-10SI AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf
AT24C01A-10SI
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
MXSMLG7.0A 10563-msml-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC SMLG
товар відсутній
1N5307UR-1 123508-lds-0160-pdf
1N5307UR-1
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
товар відсутній
JANTXV1N5307UR-1/TR 123508-lds-0160-pdf
JANTXV1N5307UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
товар відсутній
JANTX1N5307UR-1/TR 123508-lds-0160-pdf
JANTX1N5307UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
товар відсутній
JAN1N5307UR-1/TR 123508-lds-0160-pdf
JAN1N5307UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Grade: Military
Qualification: MIL-PRF-19500/463
товар відсутній
1N5307UR-1/TR 123508-lds-0160-pdf
1N5307UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
товар відсутній
JANS1N5307UR-1 123508-lds-0160-pdf
JANS1N5307UR-1
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
товар відсутній
JANS1N5307UR-1/TR 123508-lds-0160-pdf
JANS1N5307UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
товар відсутній
MQ2N5115UB/TR
Виробник: Microchip Technology
Description: JFET
товар відсутній
MX2N5114UB/TR
MX2N5114UB/TR
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MV2N5115UB/TR
Виробник: Microchip Technology
Description: JFET
товар відсутній
2N5116UA/TR
Виробник: Microchip Technology
Description: JFET
товар відсутній
MQ2N5116UB
Виробник: Microchip Technology
Description: JFET
товар відсутній
MX2N5114UB
MX2N5114UB
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MQ2N5115UB
Виробник: Microchip Technology
Description: JFET
товар відсутній
MQ2N5116UB/TR
Виробник: Microchip Technology
Description: JFET
товар відсутній
MX2N5115UB/TR
Виробник: Microchip Technology
Description: JFET
товар відсутній
MX2N5116UB
Виробник: Microchip Technology
Description: JFET
товар відсутній
MX2N5115UB
Виробник: Microchip Technology
Description: JFET
товар відсутній
MQ2N5115
Виробник: Microchip Technology
Description: JFET
товар відсутній
MV2N5116UB
Виробник: Microchip Technology
Description: JFET
товар відсутній
MX2N5116UB/TR
Виробник: Microchip Technology
Description: JFET
товар відсутній
SY100ELT25ZG-TR sy100elt25.pdf
SY100ELT25ZG-TR
Виробник: Microchip Technology
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: ECL
Number of Circuits: 1
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+262.92 грн
Мінімальне замовлення: 1000
SY100ELT25ZG-TR sy100elt25.pdf
SY100ELT25ZG-TR
Виробник: Microchip Technology
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: ECL
Number of Circuits: 1
на замовлення 2454 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+347.04 грн
25+ 278.77 грн
100+ 253.18 грн
MXLPLAD18KP14CA MPLAD18KP7.0A_-_MPLAD18KP200CA.pdf
Виробник: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC PLAD
товар відсутній
MXPLAD18KP14CA MPLAD18KP7.0A_-_MPLAD18KP200CA.pdf
Виробник: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 776A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 18000W (18kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MAPLAD7.5KP14CA 132315-plad7-5kp-datasheet
MAPLAD7.5KP14CA
Виробник: Microchip Technology
Description: TVS DIODE
товар відсутній
MAPLAD18KP14CAE3 MPLAD18KP7.0A_-_MPLAD18KP200CA.pdf
Виробник: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 776A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 18000W (18kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MXPLAD18KP14AE3 MPLAD18KP7.0A_-_MPLAD18KP200CA.pdf
Виробник: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC PLAD
товар відсутній
MECH-SAMPLE-CQ256NHS
Виробник: Microchip Technology
Description: MECH-SAMPLE-CQ256NHS
товар відсутній
LG896_DAISY_CHAIN
Виробник: Microchip Technology
Description: LG896_DAISY_CHAIN
товар відсутній
LG484_DAISY_CHAIN
Виробник: Microchip Technology
Description: LG484_DAISY_CHAIN
товар відсутній
93AA66AT-I/SN 21795E.pdf
93AA66AT-I/SN
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
товар відсутній
93AA66AT-I/SN 21795E.pdf
93AA66AT-I/SN
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.23 грн
25+ 25.48 грн
100+ 24.73 грн
Мінімальне замовлення: 12
93AA56CT-I/SN 21794G.pdf
93AA56CT-I/SN
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
товар відсутній
93AA56CT-I/SN 21794G.pdf
93AA56CT-I/SN
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
товар відсутній
JANS2N3737UB/TR
JANS2N3737UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
товар відсутній
JAN2N3737UB/TR
JAN2N3737UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A 3UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
товар відсутній
JANTX2N3737UB/TR
JANTX2N3737UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
товар відсутній
JANTXV2N3737 8978-lds-0173-datasheet
JANTXV2N3737
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A TO46-3
товар відсутній
JAN2N3737 8978-lds-0173-datasheet
JAN2N3737
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-46-3
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
товар відсутній
JANTX2N3737 8978-lds-0173-datasheet
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A TO46
Packaging: Bulk
Package / Case: TO-46-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
товар відсутній
JANS2N3737UB
JANS2N3737UB
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
товар відсутній
JANTXV2N3737UB/TR
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
товар відсутній
2N3737UB/TR
2N3737UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
товар відсутній
JANTXV2N3737UB 8978-lds-0173-datasheet
JANTXV2N3737UB
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 591 1182 1583 1584 1585 1586 1587 1588 1589 1590 1591 1592 1593 1773 2364 2955 3546 4137 4728 5319 5910 5912  [ Наступна Сторінка >> ]