JANTX2N3737UB/TR Microchip Technology
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
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Технічний опис JANTX2N3737UB/TR Microchip Technology
Description: TRANS NPN 40V 1.5A UB, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V, Supplier Device Package: UB, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 500 mW, Grade: Military, Qualification: MIL-PRF-19500/395.
Інші пропозиції JANTX2N3737UB/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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JANTX2N3737UB/TR | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT Small-Signal BJT |
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