Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (347814) > Сторінка 1156 з 5797
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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2N5880 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
товару немає в наявності |
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2N5881 | Microchip Technology |
Description: TRANS NPN 60V 15A Packaging: Bulk Transistor Type: NPN Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 160 W |
товару немає в наявності |
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2N5882 | Microchip Technology |
Description: NPN POWER TRANSISTOR SILICON AMP Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Supplier Device Package: TO-3 Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 160 W |
товару немає в наявності |
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2N6051 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk Part Status: Active |
товару немає в наявності |
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2N6058 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk Part Status: Active |
товару немає в наявності |
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| 2N6193U3 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
товару немає в наявності |
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| 2N6278 | Microchip Technology | Description: NPN TRANSISTOR |
товару немає в наявності |
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| 2N6280 | Microchip Technology | Description: NPN TRANSISTOR |
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| 2N6281 | Microchip Technology | Description: NPN TRANSISTOR |
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2N6298 | Microchip Technology |
 Description: PNP TRANSISTOR |
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2N6299 | Microchip Technology |
Description: PNP TRANSISTOR |
товару немає в наявності |
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2N6676 | Microchip Technology |
Description: TRANS NPN 300V 15A TO204AD Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V Supplier Device Package: TO-204AD (TO-3) Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 6 W |
товару немає в наявності |
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| 2N6678 | Microchip Technology |
Description: TRANS NPN 400V 15A TO204AD Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V Supplier Device Package: TO-204AD (TO-3) Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 3 W |
товару немає в наявності |
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| 2N6678T1 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
товару немає в наявності |
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; ; 3.jpg "2N697S") |
2N697S | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 Part Status: Active Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 600 mW |
товару немає в наявності |
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| 2N706 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
товару немає в наявності |
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| 2N706A | Microchip Technology | Description: NPN TRANSISTOR |
товару немає в наявності |
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| CDLL4569A | Microchip Technology |
Description: DIODE ZENER |
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CDLL4909 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 12.8 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 15 µA @ 8 V |
товару немає в наявності |
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CDLL4909A | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 12.8 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 15 µA @ 8 V |
товару немає в наявності |
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| CDLL4920 | Microchip Technology |
Description: DIODE ZENER |
товару немає в наявності |
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| CDLL4920A | Microchip Technology |
Description: DIODE ZENER |
товару немає в наявності |
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| CDLL4931 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 19.2 V Impedance (Max) (Zzt): 36 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Current - Reverse Leakage @ Vr: 15 µA @ 12 V |
товару немає в наявності |
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| CDLL4931A | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 19.2 V Impedance (Max) (Zzt): 36 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Current - Reverse Leakage @ Vr: 15 µA @ 12 V |
товару немає в наявності |
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| CDLL5985 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 2.4 V Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA |
товару немає в наявності |
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| CDLL5986 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Part Status: Active |
товару немає в наявності |
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| CDLL5987 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Part Status: Active |
товару немає в наявності |
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| CDLL5988 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Part Status: Active |
товару немає в наявності |
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| CDLL5989 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk |
товару немає в наявності |
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| CDLL5991 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Part Status: Active |
товару немає в наявності |
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| CDLL829 | Microchip Technology | Description: DIODE ZENER |
товару немає в наявності |
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| CDLL829A | Microchip Technology | Description: DIODE ZENER |
товару немає в наявності |
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| CDLL937 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V |
товару немає в наявності |
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| CDLL937A | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V |
товару немає в наявності |
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| CDLL937B | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V |
товару немає в наявності |
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| EPS15 | Microchip Technology |
Description: TVS DIODE Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33.9A (8/20µs) Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: A, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Active |
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JAN1N3020B-1 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-41 Grade: Military Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V Qualification: MIL-PRF-19500/115 |
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JAN1N3029B-1 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-41 Grade: Military Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 18.2 V Qualification: MIL-PRF-19500/115 |
товару немає в наявності |
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| JAN1N3030B-1 | Microchip Technology |
Description: DIODE ZENER |
товару немає в наявності |
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JAN1N4109-1 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
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| JAN1N4567A-1 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk |
товару немає в наявності |
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JAN1N4584A-1 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±1% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V Qualification: MIL-PRF-19500/452 |
товару немає в наявності |
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JAN1N5310-1 | Microchip Technology |
Description: DIODE CUR REG 100V 3.63MA 500MW Packaging: Bulk Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 3.63mA Voltage - Limiting (Max): 2.35V |
товару немає в наявності |
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| JAN1N6337 | Microchip Technology |
Description: DIODE ZENER |
товару немає в наявності |
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| JAN1N6342US | Microchip Technology |
Description: DIODE ZENER |
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| JAN1N7050-1 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk |
товару немає в наявності |
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| JAN1N7051-1 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk |
товару немає в наявності |
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| JAN1N7052-1 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk |
товару немає в наявності |
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| JAN1N7053-1 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk |
товару немає в наявності |
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| JAN1N7054-1 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk |
товару немає в наявності |
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| JAN1N7055-1 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Part Status: Active |
товару немає в наявності |
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| JAN1N914UR | Microchip Technology |
Description: DIODE GEN PURP 75V 200MA DO213AA Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 75 V Grade: Military Qualification: MIL-PRF-19500/116 |
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JAN1N970B-1 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 33 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 18 V Grade: Military Qualification: MIL-PRF-19500/117 |
товару немає в наявності |
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JAN2N2904 | Microchip Technology |
Description: TRANS PNP 40V 600MA TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 10mA, 10V Supplier Device Package: TO-39 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 600 mW Grade: Military Qualification: MIL-PRF-19500/290 |
товару немає в наявності |
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JAN2N2904AL | Microchip Technology |
Description: TRANS PNP 60V 600MA TO5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V Supplier Device Package: TO-5AA Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 600 mW Grade: Military Qualification: MIL-PRF-19500/290 |
товару немає в наявності |
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| JANTX1N3595AUS | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk |
товару немає в наявності |
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JANTX1N5711UBD | Microchip Technology |
Description: DIODE ARRAY SCHOTTKY 50V 33MA UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 33mA Grade: Military Qualification: MIL-PRF-19500/444 |
товару немає в наявності |
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| JANTX1N6338 | Microchip Technology |
Description: DIODE ZENER |
товару немає в наявності |
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JANTX2N2920 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: TO-78-6 Grade: Military Qualification: MIL-PRF-19500/355 |
товару немає в наявності |
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| Jantx2N2920U | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/355 |
товару немає в наявності |
| 2N5881 |
Виробник: Microchip Technology
Description: TRANS NPN 60V 15A
Packaging: Bulk
Transistor Type: NPN
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 160 W
Description: TRANS NPN 60V 15A
Packaging: Bulk
Transistor Type: NPN
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 160 W
товару немає в наявності
| 2N5882 |
Виробник: Microchip Technology
Description: NPN POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 160 W
Description: NPN POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 160 W
товару немає в наявності
| 2N6051 |
Виробник: Microchip Technology
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Part Status: Active
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Part Status: Active
товару немає в наявності
| 2N6058 |
Виробник: Microchip Technology
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Part Status: Active
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Part Status: Active
товару немає в наявності
| 2N6193U3 |
товару немає в наявності
| 2N6676 |
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Виробник: Microchip Technology
Description: TRANS NPN 300V 15A TO204AD
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 6 W
Description: TRANS NPN 300V 15A TO204AD
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 6 W
товару немає в наявності
| 2N6678 |
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Виробник: Microchip Technology
Description: TRANS NPN 400V 15A TO204AD
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 3 W
Description: TRANS NPN 400V 15A TO204AD
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 3 W
товару немає в наявності
| 2N6678T1 |
товару немає в наявності
| 2N697S |
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Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
товару немає в наявності
| 2N706 |
товару немає в наявності
| CDLL4909 |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
товару немає в наявності
| CDLL4909A |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
товару немає в наявності
| CDLL4931 |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 36 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 36 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
товару немає в наявності
| CDLL4931A |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 36 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 36 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
товару немає в наявності
| CDLL5985 |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Description: DIODE ZENER
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
товару немає в наявності
| CDLL5986 |
товару немає в наявності
| CDLL5987 |
товару немає в наявності
| CDLL5988 |
товару немає в наявності
| CDLL5989 |
товару немає в наявності
| CDLL5991 |
товару немає в наявності
| CDLL937 |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
товару немає в наявності
| CDLL937A |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
товару немає в наявності
| CDLL937B |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
товару немає в наявності
| EPS15 |
|
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: A, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: A, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
товару немає в наявності
| JAN1N3020B-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
Qualification: MIL-PRF-19500/115
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
Qualification: MIL-PRF-19500/115
товару немає в наявності
| JAN1N3029B-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-41
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 18.2 V
Qualification: MIL-PRF-19500/115
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-41
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 18.2 V
Qualification: MIL-PRF-19500/115
товару немає в наявності
| JAN1N4109-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
Qualification: MIL-PRF-19500/435
товару немає в наявності
| JAN1N4567A-1 |
товару немає в наявності
| JAN1N4584A-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/452
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/452
товару немає в наявності
| JAN1N5310-1 |
|
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 3.63MA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 3.63mA
Voltage - Limiting (Max): 2.35V
Description: DIODE CUR REG 100V 3.63MA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 3.63mA
Voltage - Limiting (Max): 2.35V
товару немає в наявності
| JAN1N7050-1 |
товару немає в наявності
| JAN1N7051-1 |
товару немає в наявності
| JAN1N7052-1 |
товару немає в наявності
| JAN1N7053-1 |
товару немає в наявності
| JAN1N7054-1 |
товару немає в наявності
| JAN1N7055-1 |
товару немає в наявності
| JAN1N914UR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Grade: Military
Qualification: MIL-PRF-19500/116
Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Grade: Military
Qualification: MIL-PRF-19500/116
товару немає в наявності
| JAN1N970B-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500/117
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500/117
товару немає в наявності
| JAN2N2904 |
|
Виробник: Microchip Technology
Description: TRANS PNP 40V 600MA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 10mA, 10V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Grade: Military
Qualification: MIL-PRF-19500/290
Description: TRANS PNP 40V 600MA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 10mA, 10V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Grade: Military
Qualification: MIL-PRF-19500/290
товару немає в наявності
| JAN2N2904AL |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 600MA TO5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 600 mW
Grade: Military
Qualification: MIL-PRF-19500/290
Description: TRANS PNP 60V 600MA TO5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 600 mW
Grade: Military
Qualification: MIL-PRF-19500/290
товару немає в наявності
| JANTX1N3595AUS |
товару немає в наявності
| JANTX1N5711UBD |
|
Виробник: Microchip Technology
Description: DIODE ARRAY SCHOTTKY 50V 33MA UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 33mA
Grade: Military
Qualification: MIL-PRF-19500/444
Description: DIODE ARRAY SCHOTTKY 50V 33MA UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 33mA
Grade: Military
Qualification: MIL-PRF-19500/444
товару немає в наявності
| JANTX2N2920 |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
товару немає в наявності
| Jantx2N2920U |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/355
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/355
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