Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (354679) > Сторінка 1155 з 5912
| Фото | Назва | Виробник | Інформація |
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| 2N3506L | Microchip Technology |
 Description: NPN POWER SILICON TRANSISTORS |
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| 2N3507 | Microchip Technology |
Description: NPN POWER SILICON TRANSISTORS |
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| 2N3507AL | Microchip Technology |
Description: NPN POWER SILICON TRANSISTORS |
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| 2N3507L | Microchip Technology |
Description: NPN POWER SILICON TRANSISTORS |
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2N3637 | Microchip Technology |
Description: TRANS PNP 175V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Supplier Device Package: TO-39 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 175 V Power - Max: 1 W |
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2N3740 | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 25 W |
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2N3740A | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 25 W |
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2N3741 | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W |
на замовлення 537 шт: термін постачання 21-31 дні (днів) |
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2N3741A | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W |
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| 2N3867 | Microchip Technology |
Description: TRANS PNP 40V 0.003A TO5 Packaging: Bulk Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V Supplier Device Package: TO-5 Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
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2N3867S | Microchip Technology |
Description: TRANS PNP 40V 0.003A TO39 Packaging: Bulk Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
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2N3868S | Microchip Technology |
Description: TRANS PNP 60V 0.003A TO39 Packaging: Bulk Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
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2N3879 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A Current - Collector Cutoff (Max): 4mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 75 V Power - Max: 35 W |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
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,TO-226_straightlead.jpg "2N3902") |
2N3902 | Microchip Technology |
Description: NPN TRANSISTOR |
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2N4231 | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk |
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2N4232A | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk |
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2N4233 | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk |
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2N4233A | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk |
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| 2N4300 | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Part Status: Active |
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| 2N4898 | Microchip Technology | Description: NPN SILICON TRANSISTOR |
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| 2N4899 | Microchip Technology | Description: NPN SILICON TRANSISTOR |
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| 2N5039 | Microchip Technology |
Description: NPN SILICON TRANSISTOR Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5A, 20A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V Supplier Device Package: TO-204AD (TO-3) Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 75 V Power - Max: 140 W |
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| 2N5050 | Microchip Technology | Description: NPN SILICON TRANSISTOR |
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2N5336 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
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2N5337 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
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| 2N5415S | Microchip Technology |
Description: PNP TRANSISTORS |
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2N5415UA | Microchip Technology |
Description: PNP TRANSISTORS Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 750 mW |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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2N5416UA | Microchip Technology |
Description: TRANS PNP 300V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW |
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2N5838 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
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2N5839 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
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2N5840 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Part Status: Active |
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2N5868 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5872 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5873 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5874 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5875 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5876 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5877 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5880 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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2N5881 | Microchip Technology |
Description: TRANS NPN 60V 15A Packaging: Bulk Transistor Type: NPN Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 160 W |
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2N5882 | Microchip Technology |
Description: NPN POWER TRANSISTOR SILICON AMP Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Supplier Device Package: TO-3 Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 160 W |
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2N6051 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk Part Status: Active |
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2N6058 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk Part Status: Active |
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| 2N6193U3 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
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| 2N6278 | Microchip Technology | Description: NPN TRANSISTOR |
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| 2N6280 | Microchip Technology | Description: NPN TRANSISTOR |
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| 2N6281 | Microchip Technology | Description: NPN TRANSISTOR |
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2N6298 | Microchip Technology |
Description: PNP TRANSISTOR |
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2N6299 | Microchip Technology |
Description: PNP TRANSISTOR |
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2N6676 | Microchip Technology |
Description: TRANS NPN 300V 15A TO204AD Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V Supplier Device Package: TO-204AD (TO-3) Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 6 W |
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| 2N6678 | Microchip Technology |
Description: TRANS NPN 400V 15A TO204AD Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V Supplier Device Package: TO-204AD (TO-3) Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 3 W |
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| 2N6678T1 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
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; ; 3.jpg "2N697S") |
2N697S | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 Part Status: Active Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 600 mW |
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| 2N706 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
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| 2N706A | Microchip Technology | Description: NPN TRANSISTOR |
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| CDLL4569A | Microchip Technology |
Description: DIODE ZENER |
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CDLL4909 | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 12.8 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 15 µA @ 8 V |
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CDLL4909A | Microchip Technology |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 12.8 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 15 µA @ 8 V |
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| CDLL4920 | Microchip Technology |
Description: DIODE ZENER |
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| CDLL4920A | Microchip Technology |
Description: DIODE ZENER |
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| 2N3637 |
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Виробник: Microchip Technology
Description: TRANS PNP 175V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Description: TRANS PNP 175V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
товар відсутній
| 2N3740 |
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Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
товар відсутній
| 2N3740A |
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Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
товар відсутній
| 2N3741 |
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Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
на замовлення 537 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1031.79 грн |
| 100+ | 922.72 грн |
| 2N3741A |
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Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
товар відсутній
| 2N3867 |
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Виробник: Microchip Technology
Description: TRANS PNP 40V 0.003A TO5
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: TRANS PNP 40V 0.003A TO5
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
товар відсутній
| 2N3867S |
|
Виробник: Microchip Technology
Description: TRANS PNP 40V 0.003A TO39
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: TRANS PNP 40V 0.003A TO39
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
товар відсутній
| 2N3868S |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
товар відсутній
| 2N3879 |
|
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A
Current - Collector Cutoff (Max): 4mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 35 W
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A
Current - Collector Cutoff (Max): 4mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 35 W
на замовлення 125 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1604.49 грн |
| 100+ | 1434.89 грн |
| 2N4300 |
товар відсутній
| 2N5039 |
|
Виробник: Microchip Technology
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5A, 20A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 140 W
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5A, 20A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 140 W
товар відсутній
| 2N5415UA |
|
Виробник: Microchip Technology
Description: PNP TRANSISTORS
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Description: PNP TRANSISTORS
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3249.45 грн |
| 2N5416UA |
|
Виробник: Microchip Technology
Description: TRANS PNP 300V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Description: TRANS PNP 300V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
товар відсутній
| 2N5881 |
Виробник: Microchip Technology
Description: TRANS NPN 60V 15A
Packaging: Bulk
Transistor Type: NPN
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 160 W
Description: TRANS NPN 60V 15A
Packaging: Bulk
Transistor Type: NPN
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 160 W
товар відсутній
| 2N5882 |
Виробник: Microchip Technology
Description: NPN POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 160 W
Description: NPN POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 160 W
товар відсутній
| 2N6051 |
Виробник: Microchip Technology
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Part Status: Active
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Part Status: Active
товар відсутній
| 2N6058 |
Виробник: Microchip Technology
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Part Status: Active
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Part Status: Active
товар відсутній
| 2N6193U3 |
товар відсутній
| 2N6676 |
|
Виробник: Microchip Technology
Description: TRANS NPN 300V 15A TO204AD
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 6 W
Description: TRANS NPN 300V 15A TO204AD
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 6 W
товар відсутній
| 2N6678 |
|
Виробник: Microchip Technology
Description: TRANS NPN 400V 15A TO204AD
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 3 W
Description: TRANS NPN 400V 15A TO204AD
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 3 W
товар відсутній
| 2N697S |
|
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
товар відсутній
| CDLL4909 |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
товар відсутній
| CDLL4909A |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
товар відсутній