Продукція > MICRO COMMERCIAL CO > Всі товари виробника MICRO COMMERCIAL CO (15141) > Сторінка 239 з 253

Обрати Сторінку:   [  << Попередня Сторінка ]  1 25 50 75 100 125 150 175 200 225 234 235 236 237 238 239 240 241 242 243 244 250 253  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
SMA6J54CAFL-TP SMA6J54CAFL-TP Micro Commercial Co Description: Interface
Packaging: Bulk
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-221AC (SMA-FL)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
товар відсутній
MBR15U60HE3-TP MBR15U60HE3-TP Micro Commercial Co MBR15U60HE3(TO-277).pdf Description: SCHOTTKY DIODES
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 490pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
SL24UPL-TP SL24UPL-TP Micro Commercial Co SL24UPL(SOD-123FL).pdf Description: DIODE SCHOTTKY 2A 40V SOD-123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
товар відсутній
SMAJP4KE100CA-TP SMAJP4KE100CA-TP Micro Commercial Co SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-214AC (SMAJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4KE100CA-TP P4KE100CA-TP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
SMAJP4KE110A-TP SMAJP4KE110A-TP Micro Commercial Co SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4KE110A-TP P4KE110A-TP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4KE13CA-TP P4KE13CA-TP Micro Commercial Co P4KE6.8A~P4KE550A(DO-41).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.5A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
SMAJP4KE13CA-TP SMAJP4KE13CA-TP Micro Commercial Co SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.5A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-214AC (SMAJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
RL105-BP Micro Commercial Co RL101-RL107(A-405).pdf Description: Interface
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RL105GP-TP RL105GP-TP Micro Commercial Co RL101GP_RL107GP(A-405).pdf Description: DIODE GEN PURP 600V 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RL105-N-2-2-BP RL105-N-2-2-BP Micro Commercial Co RL101_-RL107.pdf Description: DIODE GEN PURP 600V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RL105-N-2-4-AP RL105-N-2-4-AP Micro Commercial Co RL101_-RL107.pdf Description: DIODE GEN PURP 600V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RL105GP-AP Micro Commercial Co RL101GP_RL107GP(A-405).pdf Description: DIODE GEN PURP 600V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RL105-AP Micro Commercial Co RL101_-_RL107.pdf Description: DIODE GEN PURP 600V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RL105-TP RL105-TP Micro Commercial Co RL101_-_RL107.pdf Description: DIODE GEN PURP 600V 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
MURS540A-BP Micro Commercial Co MURS540A(TO-220AC).pdf Description: Interface
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
MURS540FA-BP MURS540FA-BP Micro Commercial Co MURS540FA(ITO-220AC).pdf Description: Interface
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
LCE7.0A-TP LCE7.0A-TP Micro Commercial Co LCE6.5-LCE28A(DO-201AE).pdf Description: Interface
Packaging: Bulk
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 100A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-201AE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
ESD15VT2BHE3-TP ESD15VT2BHE3-TP Micro Commercial Co ESD15VT2BHE3(SOT-23).pdf Description: TVS DIODES
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOT-23
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 270W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
14+22.81 грн
17+ 18.23 грн
25+ 15.32 грн
100+ 9.1 грн
250+ 7.02 грн
500+ 5.98 грн
1000+ 4 грн
Мінімальне замовлення: 14
PXT8550-B-TP PXT8550-B-TP Micro Commercial Co PXT8550(SOT-89).pdf Description: Interface
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
товар відсутній
DTC143XUA-TP DTC143XUA-TP Micro Commercial Co DTC143XUA(SOT-323).pdf Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
товар відсутній
KTA1267-O-AP KTA1267-O-AP Micro Commercial Co KTA1267%28TO-92S%29-V1.pdf Description: TRANS PNP 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
товар відсутній
KTA1267-GR-BP KTA1267-GR-BP Micro Commercial Co KTA1267%28TO-92S%29-V1.pdf Description: TRANS PNP 50V 0.15A TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
товар відсутній
KTA1267-Y-AP KTA1267-Y-AP Micro Commercial Co KTA1267%28TO-92S%29-V1.pdf Description: TRANS PNP 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
товар відсутній
KTA1267-Y-BP KTA1267-Y-BP Micro Commercial Co KTA1267%28TO-92S%29-V1.pdf Description: TRANS PNP 50V 0.15A TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
товар відсутній
KTA1267-O-BP KTA1267-O-BP Micro Commercial Co KTA1267%28TO-92S%29-V1.pdf Description: TRANS PNP 50V 0.15A TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
товар відсутній
KTA1267-GR-AP KTA1267-GR-AP Micro Commercial Co KTA1267%28TO-92S%29-V1.pdf Description: TRANS PNP 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
товар відсутній
SMBJ10AQ-TP SMBJ10AQ-TP Micro Commercial Co SMBJ5.0AQ_SMBJ190CAQ(SMB).pdf Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMAJ7.5CAQ-TP Micro Commercial Co SMAJ5.0AQ_SMAJ190CAQ(SMA).pdf Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MMBT3904-TP-HF MMBT3904-TP-HF Micro Commercial Co MMBT3904(SOT-23).pdf Description: Interface
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
товар відсутній
SMCJ1.5KE43AQ-TP SMCJ1.5KE43AQ-TP Micro Commercial Co SMCJ1.5KE6.8AQ_SMCJ1.5KE220CAQ(SMC).pdf Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25.3A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.85V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MMBT2907A-13P MMBT2907A-13P Micro Commercial Co Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
товар відсутній
MCACD60N06Y-TP MCACD60N06Y-TP Micro Commercial Co MCACD60N06Y(PDFN5060-8D).pdf Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tj)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 30V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PDFN5060-8D
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+56.48 грн
10000+ 52.3 грн
Мінімальне замовлення: 5000
MCGWF60N06YHE3-TP MCGWF60N06YHE3-TP Micro Commercial Co MCGWF60N06YHE3(DFN3333-8(SWF)).pdf Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+72.55 грн
Мінімальне замовлення: 5000
MCAC160N06Y-TP MCAC160N06Y-TP Micro Commercial Co MCAC160N06Y(DFN5060).pdf Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3586 pF @ 20 V
товар відсутній
MCAC160N06YHE3-TP MCAC160N06YHE3-TP Micro Commercial Co MCAC160N06YHE3(DFN5060).pdf Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3586 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
MBRB30100CTQ-TP Micro Commercial Co MBRB30100CTQ(D2-PAK).pdf Description: SCHOTTKY DIODES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
MMBD4148TU-TP Micro Commercial Co Description: SWITCHING DIODE
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SOT-23-6L
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.95 грн
Мінімальне замовлення: 3000
MCACL170N08Y-TP MCACL170N08Y-TP Micro Commercial Co MCACL170N08Y(DFN5060).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 208W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6452 pF @ 40 V
товар відсутній
BSS84KHE3-TP BSS84KHE3-TP Micro Commercial Co Description: SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 400mA, 10V
Power Dissipation (Max): 960mW (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.06 грн
Мінімальне замовлення: 3000
BCX56-TPQ4 Micro Commercial Co Description: MEDIUM POWER BIPOLAR TRANSISTOR
Packaging: Tape & Reel (TR)
товар відсутній
MIW60N65AS2Y-BP MIW60N65AS2Y-BP Micro Commercial Co Description: IGBT DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 155 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/81ns
Switching Energy: 2.47mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 283 W
товар відсутній
MIF15N65AT0Y-BP MIF15N65AT0Y-BP Micro Commercial Co Description: IGBT DISCRETE
Packaging: Bulk
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Isolated Tab
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 34 W
товар відсутній
MIP15N65AT0Y-BP MIP15N65AT0Y-BP Micro Commercial Co Description: IGBT DISCRETE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
товар відсутній
MIB15N65AT0Y-TP MIB15N65AT0Y-TP Micro Commercial Co MIB15N65AT0Y(D2-PAK).pdf Description: IGBT DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
товар відсутній
MIP20N65AT0Y-BP MIP20N65AT0Y-BP Micro Commercial Co Description: IGBT DISCRETE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
Supplier Device Package: TO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 120 W
товар відсутній
MIF20N65AT0Y-BP MIF20N65AT0Y-BP Micro Commercial Co Description: IGBT DISCRETE
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
Supplier Device Package: ITO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 37 W
товар відсутній
MIB20N65AT0Y-TP MIB20N65AT0Y-TP Micro Commercial Co Description: IGBT DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 120 W
товар відсутній
UMD10NHE3-TP UMD10NHE3-TP Micro Commercial Co UMD10NHE3(SOT-363).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+6.99 грн
6000+ 6.33 грн
Мінімальне замовлення: 3000
UMD10NHE3-TP UMD10NHE3-TP Micro Commercial Co UMD10NHE3(SOT-363).pdf Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
13+24.33 грн
16+ 19.18 грн
25+ 17.54 грн
100+ 12.26 грн
250+ 11.11 грн
500+ 9.19 грн
1000+ 6.78 грн
Мінімальне замовлення: 13
UMB9N-TP UMB9N-TP Micro Commercial Co UMB9N(SOT-363).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+7.71 грн
6000+ 6.98 грн
Мінімальне замовлення: 3000
UMB9N-TP UMB9N-TP Micro Commercial Co UMB9N(SOT-363).pdf Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
12+27.37 грн
14+ 21.16 грн
25+ 19.36 грн
100+ 13.52 грн
250+ 12.25 грн
500+ 10.14 грн
1000+ 7.48 грн
Мінімальне замовлення: 12
UMB9NHE3-TP UMB9NHE3-TP Micro Commercial Co UMB9NHE3(SOT-363).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+8.9 грн
6000+ 8.05 грн
Мінімальне замовлення: 3000
UMB9NHE3-TP UMB9NHE3-TP Micro Commercial Co UMB9NHE3(SOT-363).pdf Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
10+31.17 грн
13+ 24.38 грн
25+ 22.32 грн
100+ 15.6 грн
250+ 14.13 грн
500+ 11.7 грн
1000+ 8.63 грн
Мінімальне замовлення: 10
UMD9N-13P UMD9N-13P Micro Commercial Co UMD9N(SOT-363).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
товар відсутній
UMD9NHE3-TP UMD9NHE3-TP Micro Commercial Co UMD9NHE3(SOT-363).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UMD9N-TPQ2 UMD9N-TPQ2 Micro Commercial Co UMD9N(SOT-363).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
товар відсутній
UMD12N-TPQ2 UMD12N-TPQ2 Micro Commercial Co UMD12N(SOT-363).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
товар відсутній
UMD18N-TP UMD18N-TP Micro Commercial Co UMD18N(SOT-363).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SOT-363
товар відсутній
SMA6J54CAFL-TP
SMA6J54CAFL-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-221AC (SMA-FL)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
товар відсутній
MBR15U60HE3-TP MBR15U60HE3(TO-277).pdf
MBR15U60HE3-TP
Виробник: Micro Commercial Co
Description: SCHOTTKY DIODES
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 490pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
SL24UPL-TP SL24UPL(SOD-123FL).pdf
SL24UPL-TP
Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 2A 40V SOD-123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
товар відсутній
SMAJP4KE100CA-TP SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf
SMAJP4KE100CA-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-214AC (SMAJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4KE100CA-TP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE100CA-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
SMAJP4KE110A-TP SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf
SMAJP4KE110A-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4KE110A-TP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE110A-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4KE13CA-TP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE13CA-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.5A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
SMAJP4KE13CA-TP SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf
SMAJP4KE13CA-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.5A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-214AC (SMAJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
RL105-BP RL101-RL107(A-405).pdf
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RL105GP-TP RL101GP_RL107GP(A-405).pdf
RL105GP-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RL105-N-2-2-BP RL101_-RL107.pdf
RL105-N-2-2-BP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RL105-N-2-4-AP RL101_-RL107.pdf
RL105-N-2-4-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RL105GP-AP RL101GP_RL107GP(A-405).pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RL105-AP RL101_-_RL107.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A A-405
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RL105-TP RL101_-_RL107.pdf
RL105-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A A-405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
MURS540A-BP MURS540A(TO-220AC).pdf
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
MURS540FA-BP MURS540FA(ITO-220AC).pdf
MURS540FA-BP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
LCE7.0A-TP LCE6.5-LCE28A(DO-201AE).pdf
LCE7.0A-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 100A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-201AE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
ESD15VT2BHE3-TP ESD15VT2BHE3(SOT-23).pdf
ESD15VT2BHE3-TP
Виробник: Micro Commercial Co
Description: TVS DIODES
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOT-23
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 270W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+22.81 грн
17+ 18.23 грн
25+ 15.32 грн
100+ 9.1 грн
250+ 7.02 грн
500+ 5.98 грн
1000+ 4 грн
Мінімальне замовлення: 14
PXT8550-B-TP PXT8550(SOT-89).pdf
PXT8550-B-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
товар відсутній
DTC143XUA-TP DTC143XUA(SOT-323).pdf
DTC143XUA-TP
Виробник: Micro Commercial Co
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
товар відсутній
KTA1267-O-AP KTA1267%28TO-92S%29-V1.pdf
KTA1267-O-AP
Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
товар відсутній
KTA1267-GR-BP KTA1267%28TO-92S%29-V1.pdf
KTA1267-GR-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.15A TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
товар відсутній
KTA1267-Y-AP KTA1267%28TO-92S%29-V1.pdf
KTA1267-Y-AP
Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
товар відсутній
KTA1267-Y-BP KTA1267%28TO-92S%29-V1.pdf
KTA1267-Y-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.15A TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
товар відсутній
KTA1267-O-BP KTA1267%28TO-92S%29-V1.pdf
KTA1267-O-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.15A TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
товар відсутній
KTA1267-GR-AP KTA1267%28TO-92S%29-V1.pdf
KTA1267-GR-AP
Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
товар відсутній
SMBJ10AQ-TP SMBJ5.0AQ_SMBJ190CAQ(SMB).pdf
SMBJ10AQ-TP
Виробник: Micro Commercial Co
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMAJ7.5CAQ-TP SMAJ5.0AQ_SMAJ190CAQ(SMA).pdf
Виробник: Micro Commercial Co
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MMBT3904-TP-HF MMBT3904(SOT-23).pdf
MMBT3904-TP-HF
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
товар відсутній
SMCJ1.5KE43AQ-TP SMCJ1.5KE6.8AQ_SMCJ1.5KE220CAQ(SMC).pdf
SMCJ1.5KE43AQ-TP
Виробник: Micro Commercial Co
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25.3A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.85V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MMBT2907A-13P
MMBT2907A-13P
Виробник: Micro Commercial Co
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
товар відсутній
MCACD60N06Y-TP MCACD60N06Y(PDFN5060-8D).pdf
MCACD60N06Y-TP
Виробник: Micro Commercial Co
Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tj)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 30V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PDFN5060-8D
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+56.48 грн
10000+ 52.3 грн
Мінімальне замовлення: 5000
MCGWF60N06YHE3-TP MCGWF60N06YHE3(DFN3333-8(SWF)).pdf
MCGWF60N06YHE3-TP
Виробник: Micro Commercial Co
Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+72.55 грн
Мінімальне замовлення: 5000
MCAC160N06Y-TP MCAC160N06Y(DFN5060).pdf
MCAC160N06Y-TP
Виробник: Micro Commercial Co
Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3586 pF @ 20 V
товар відсутній
MCAC160N06YHE3-TP MCAC160N06YHE3(DFN5060).pdf
MCAC160N06YHE3-TP
Виробник: Micro Commercial Co
Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3586 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
MBRB30100CTQ-TP MBRB30100CTQ(D2-PAK).pdf
Виробник: Micro Commercial Co
Description: SCHOTTKY DIODES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
MMBD4148TU-TP
Виробник: Micro Commercial Co
Description: SWITCHING DIODE
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SOT-23-6L
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+3.95 грн
Мінімальне замовлення: 3000
MCACL170N08Y-TP MCACL170N08Y(DFN5060).pdf
MCACL170N08Y-TP
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 208W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6452 pF @ 40 V
товар відсутній
BSS84KHE3-TP
BSS84KHE3-TP
Виробник: Micro Commercial Co
Description: SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 400mA, 10V
Power Dissipation (Max): 960mW (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.06 грн
Мінімальне замовлення: 3000
BCX56-TPQ4
Виробник: Micro Commercial Co
Description: MEDIUM POWER BIPOLAR TRANSISTOR
Packaging: Tape & Reel (TR)
товар відсутній
MIW60N65AS2Y-BP
MIW60N65AS2Y-BP
Виробник: Micro Commercial Co
Description: IGBT DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 155 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/81ns
Switching Energy: 2.47mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 283 W
товар відсутній
MIF15N65AT0Y-BP
MIF15N65AT0Y-BP
Виробник: Micro Commercial Co
Description: IGBT DISCRETE
Packaging: Bulk
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Isolated Tab
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 34 W
товар відсутній
MIP15N65AT0Y-BP
MIP15N65AT0Y-BP
Виробник: Micro Commercial Co
Description: IGBT DISCRETE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
товар відсутній
MIB15N65AT0Y-TP MIB15N65AT0Y(D2-PAK).pdf
MIB15N65AT0Y-TP
Виробник: Micro Commercial Co
Description: IGBT DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
товар відсутній
MIP20N65AT0Y-BP
MIP20N65AT0Y-BP
Виробник: Micro Commercial Co
Description: IGBT DISCRETE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
Supplier Device Package: TO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 120 W
товар відсутній
MIF20N65AT0Y-BP
MIF20N65AT0Y-BP
Виробник: Micro Commercial Co
Description: IGBT DISCRETE
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
Supplier Device Package: ITO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 37 W
товар відсутній
MIB20N65AT0Y-TP
MIB20N65AT0Y-TP
Виробник: Micro Commercial Co
Description: IGBT DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 120 W
товар відсутній
UMD10NHE3-TP UMD10NHE3(SOT-363).pdf
UMD10NHE3-TP
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.99 грн
6000+ 6.33 грн
Мінімальне замовлення: 3000
UMD10NHE3-TP UMD10NHE3(SOT-363).pdf
UMD10NHE3-TP
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+24.33 грн
16+ 19.18 грн
25+ 17.54 грн
100+ 12.26 грн
250+ 11.11 грн
500+ 9.19 грн
1000+ 6.78 грн
Мінімальне замовлення: 13
UMB9N-TP UMB9N(SOT-363).pdf
UMB9N-TP
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+7.71 грн
6000+ 6.98 грн
Мінімальне замовлення: 3000
UMB9N-TP UMB9N(SOT-363).pdf
UMB9N-TP
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.37 грн
14+ 21.16 грн
25+ 19.36 грн
100+ 13.52 грн
250+ 12.25 грн
500+ 10.14 грн
1000+ 7.48 грн
Мінімальне замовлення: 12
UMB9NHE3-TP UMB9NHE3(SOT-363).pdf
UMB9NHE3-TP
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+8.9 грн
6000+ 8.05 грн
Мінімальне замовлення: 3000
UMB9NHE3-TP UMB9NHE3(SOT-363).pdf
UMB9NHE3-TP
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.17 грн
13+ 24.38 грн
25+ 22.32 грн
100+ 15.6 грн
250+ 14.13 грн
500+ 11.7 грн
1000+ 8.63 грн
Мінімальне замовлення: 10
UMD9N-13P UMD9N(SOT-363).pdf
UMD9N-13P
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
товар відсутній
UMD9NHE3-TP UMD9NHE3(SOT-363).pdf
UMD9NHE3-TP
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UMD9N-TPQ2 UMD9N(SOT-363).pdf
UMD9N-TPQ2
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
товар відсутній
UMD12N-TPQ2 UMD12N(SOT-363).pdf
UMD12N-TPQ2
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
товар відсутній
UMD18N-TP UMD18N(SOT-363).pdf
UMD18N-TP
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SOT-363
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 25 50 75 100 125 150 175 200 225 234 235 236 237 238 239 240 241 242 243 244 250 253  [ Наступна Сторінка >> ]