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IMDQ75R040M1HXUMA1 IMDQ75R040M1HXUMA1 Infineon Technologies Infineon-IMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae16d7a37e64 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
товар відсутній
IMDQ75R040M1HXUMA1 IMDQ75R040M1HXUMA1 Infineon Technologies Infineon-IMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae16d7a37e64 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
на замовлення 694 шт:
термін постачання 21-31 дні (днів)
1+769.64 грн
10+ 669.59 грн
25+ 638.4 грн
100+ 520.22 грн
250+ 496.84 грн
IMDQ75R016M1HXUMA1 IMDQ75R016M1HXUMA1 Infineon Technologies Infineon-IMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b61330f5e21f8 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20A
Power Dissipation (Max): 384W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
товар відсутній
IMDQ75R016M1HXUMA1 IMDQ75R016M1HXUMA1 Infineon Technologies Infineon-IMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b61330f5e21f8 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20A
Power Dissipation (Max): 384W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
на замовлення 593 шт:
термін постачання 21-31 дні (днів)
1+1425.64 грн
10+ 1266.05 грн
25+ 1209.16 грн
100+ 1014.6 грн
250+ 967.87 грн
BSB104N08NP3GXUMA3 Infineon Technologies Infineon-BSB104N08NP3%20G-DataSheet-v02_02-EN.pdf?fileId=db3a304341e0aed00141efc548ca1b2b Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.8W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
Supplier Device Package: MG-WDSON-2-6
товар відсутній
IRFB4228PBFXKMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
товар відсутній
ESD120B1W0201E6327XTSA1 ESD120B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD120-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172cccee8570172 Description: TVS DIODES SG-WLL-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.24pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.1V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 5.7V (Typ)
Power - Peak Pulse: 9W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
15000+2.35 грн
Мінімальне замовлення: 15000
ESD120B1W0201E6327XTSA1 ESD120B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD120-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172cccee8570172 Description: TVS DIODES SG-WLL-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.24pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.1V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 5.7V (Typ)
Power - Peak Pulse: 9W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
18+18.03 грн
26+ 12 грн
100+ 5.86 грн
500+ 4.59 грн
1000+ 3.19 грн
2000+ 2.76 грн
5000+ 2.52 грн
Мінімальне замовлення: 18
BAR 88-07LRH E6327 BAR 88-07LRH E6327 Infineon Technologies bar88series.pdf Description: RF DIODE PIN 80V 250MW TSLP-4-7
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: PIN - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Resistance @ If, F: 600mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-4-7
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
REF5GR4780AG6W1TOBO1 REF5GR4780AG6W1TOBO1 Infineon Technologies Description: REF5GR4780AG6W1TOBO1
Packaging: Box
товар відсутній
CY8C22345-24PVXAT CY8C22345-24PVXAT Infineon Technologies Infineon-CY8C21345_CY8C21645_CY8C22345_CY8C22345H_CY8C22645_AUTOMOTIVE_PSOC_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6fac13da5&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 3x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
товар відсутній
CY23EP09ZXC-1H CY23EP09ZXC-1H Infineon Technologies download Description: IC CLK ZDB 9OUT 220MHZ 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 430 шт:
термін постачання 21-31 дні (днів)
1+1344.92 грн
10+ 1189.74 грн
25+ 1140.45 грн
100+ 942.99 грн
CYS0644AFNI-S2D43T Infineon Technologies Infineon-PSOC_6_MCU_CYS0644XXZI-S2D44_DATASHEET_(PRELIMINARY)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee90bbf71df Description: IC MCU
Packaging: Tape & Reel (TR)
Package / Case: 100-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-WLCSP (4.11x3.9)
Number of I/O: 82
товар відсутній
CY62157H30-55ZSXET Infineon Technologies Description: ASYNC
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
товар відсутній
CY62157H30-55ZSXE Infineon Technologies Description: ASYNC
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
товар відсутній
S25FL128LAGMFM000 S25FL128LAGMFM000 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
1+478.87 грн
10+ 421.06 грн
25+ 413.07 грн
40+ 384.84 грн
80+ 345.31 грн
240+ 344.02 грн
FF3MR20KM1HHPSA1 FF3MR20KM1HHPSA1 Infineon Technologies Infineon-FF3MR20KM1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a8bcde381a Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 2000 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
1+55605.49 грн
10+ 51678.55 грн
IRGP4630D-EPBF IRGP4630D-EPBF Infineon Technologies IRGx4630D%28-E%29PbF.pdf Description: IGBT 600V 47A 206W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
товар відсутній
S71KS512SC0BHB000 S71KS512SC0BHB000 Infineon Technologies Infineon-512_MBIT_HYPERFLASH_+_64_MBIT_HYPERRAM_3V_MCP-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee30f916a0a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH RAM 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, DRAM
Clock Frequency: 166 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: Parallel
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 942 шт:
термін постачання 21-31 дні (днів)
1+1371.56 грн
10+ 1172.23 грн
25+ 1117.89 грн
40+ 1023.82 грн
80+ 987.59 грн
230+ 959.03 грн
S71KL512SC0BHV003 S71KL512SC0BHV003 Infineon Technologies Infineon-512_MBIT_HYPERFLASH_+_64_MBIT_HYPERRAM_3V_MCP-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee30f916a0a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH RAM 512MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH, DRAM
Clock Frequency: 100 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
товар відсутній
S71KS512SC0BHB003 S71KS512SC0BHB003 Infineon Technologies Infineon-512_MBIT_HYPERFLASH_+_64_MBIT_HYPERRAM_3V_MCP-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee30f916a0a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH RAM 512MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, DRAM
Clock Frequency: 166 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: Parallel
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
TT820N16KS20HPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Tray
товар відсутній
BB 565-02V E7902 BB 565-02V E7902 Infineon Technologies bb545series_bb565series.pdf Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 11
товар відсутній
BB 565 E7902 BB 565 E7902 Infineon Technologies bb545series_bb565series.pdf Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 11
товар відсутній
BB 565 E7908 BB 565 E7908 Infineon Technologies bb545series_bb565series.pdf Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 11
товар відсутній
IRSM836-025MA IRSM836-025MA Infineon Technologies irsm836-025ma.pdf Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tray
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
на замовлення 790 шт:
термін постачання 21-31 дні (днів)
1+622.3 грн
10+ 541.59 грн
25+ 516.38 грн
160+ 420.78 грн
320+ 401.87 грн
480+ 366.41 грн
IRSM836-044MATR IRSM836-044MATR Infineon Technologies Infineon-IRSM836-044MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e06c0d7e68 Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+271.9 грн
Мінімальне замовлення: 2000
IRSM836-044MATR IRSM836-044MATR Infineon Technologies Infineon-IRSM836-044MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e06c0d7e68 Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+497.68 грн
10+ 433.06 грн
25+ 412.89 грн
100+ 336.45 грн
250+ 321.33 грн
500+ 292.97 грн
1000+ 250.99 грн
IRSM836-045MATR IRSM836-045MATR Infineon Technologies Infineon-IRSM836-045MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e088867e6f Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tape & Reel (TR)
Package / Case: 37-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 37-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
товар відсутній
IRSM836-045MATR IRSM836-045MATR Infineon Technologies Infineon-IRSM836-045MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e088867e6f Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Cut Tape (CT)
Package / Case: 37-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 37-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
на замовлення 1855 шт:
термін постачання 21-31 дні (днів)
1+811.96 грн
10+ 706.04 грн
25+ 673.18 грн
100+ 548.55 грн
250+ 523.89 грн
500+ 477.67 грн
1000+ 409.21 грн
IRSM836-024MATR IRSM836-024MATR Infineon Technologies irsm836-024ma.pdf Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
товар відсутній
IRSM836-015MA IRSM836-015MA Infineon Technologies irsm836-015ma.pdf?fileId=5546d462533600a40153567f22fc289a Description: IC HALF BRIDGE DRIVER 1A 36QFN
Packaging: Tray
Features: Bootstrap Circuit
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 4.8Ohm
Applications: AC Motors
Current - Output / Channel: 1A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
товар відсутній
IRSM836-035MBTR IRSM836-035MBTR Infineon Technologies irsm836-035mb.pdf Description: IC MTR DRIVER 13.5V-16.5V 27PQFN
Packaging: Tape & Reel (TR)
Package / Case: 31-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 27-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
товар відсутній
AUIRF3805L AUIRF3805L Infineon Technologies INFN-S-A0008053181-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 160A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
товар відсутній
FS150R17N3E4BOSA1 FS150R17N3E4BOSA1 Infineon Technologies Infineon-FS150R17N3E4-DS-v02_00-en_de.pdf?fileId=db3a3043397219b6013976728bad5265 Description: IGBT MOD 1700V 150A 835W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 835 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+14551.1 грн
IFS100B12N3E4PB11BPSA1 IFS100B12N3E4PB11BPSA1 Infineon Technologies IFS100B12N3E4P_B11.PDF Description: IGBT MOD 1200V 150A 515W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+14451.57 грн
CY7C68023-56LFXC CY7C68023-56LFXC Infineon Technologies Description: IC CTLR USB NX2LP NAND 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Type: NAND Flash - USB
Supplier Device Package: 56-QFN (8x8)
товар відсутній
CY7C68023-56LTXC CY7C68023-56LTXC Infineon Technologies Infineon-CY7C68023_CY7C68024_EZ-USB_NX2LP_USB_2.0_NAND_FLASH_CONTROLLER-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9e897422f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB CTLR NAND NX2LP 56QFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Type: NAND Flash - USB
Supplier Device Package: 56-QFN-EP (8x8)
товар відсутній
CY7C68023-56LTXCT CY7C68023-56LTXCT Infineon Technologies Description: IC MEMORY CONTROLLERS 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Type: NAND Flash - USB
Supplier Device Package: 56-QFN-EP (8x8)
товар відсутній
S26HS512TGABHV003 S26HS512TGABHV003 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товар відсутній
FP30R06W1E3B11BOMA1 FP30R06W1E3B11BOMA1 Infineon Technologies Infineon-FP30R06W1E3_B11-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012af0c5c0515dc5 Description: IGBT MODULE 600V 37A 115W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 37 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 115 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+3470.44 грн
24+ 2977.44 грн
FS30R06W1E3B11BOMA1 FS30R06W1E3B11BOMA1 Infineon Technologies Infineon-FS30R06W1E3_B11-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012af0cbc6185dd9 Description: IGBT MODULE 600V 45A 150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
товар відсутній
FS30R06VE3BOMA1 FS30R06VE3BOMA1 Infineon Technologies Infineon-FS30R06VE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b432e6bb5a0c Description: IGBT MODULE 600V 34A 88W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 88 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
товар відсутній
FS30R06XE3BOMA1 Infineon Technologies Description: IGBT MODULE 600V 37A 100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 37 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
товар відсутній
IRFB4115PBFXKMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 62A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
товар відсутній
CY22150KFZXCT CY22150KFZXCT Infineon Technologies download Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
IRFP4229PBFXKMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
товар відсутній
CY9BF168RPMC-GNE2 CY9BF168RPMC-GNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32B 1.03125MB FLSH 120QFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
на замовлення 835 шт:
термін постачання 21-31 дні (днів)
1+698.32 грн
10+ 617.74 грн
25+ 592.12 грн
84+ 528.83 грн
IQD063N15NM5CGATMA1 IQD063N15NM5CGATMA1 Infineon Technologies Infineon-IQD063N15NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188b384db7e0809 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
товар відсутній
IQD063N15NM5CGATMA1 IQD063N15NM5CGATMA1 Infineon Technologies Infineon-IQD063N15NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188b384db7e0809 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
товар відсутній
PVA1354NSPBF PVA1354NSPBF Infineon Technologies pva13n.pdf?fileId=5546d462533600a401535683928a291e Description: SSR RELAY SPST-NO 375MA 0-100V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 375 mA
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
на замовлення 1746 шт:
термін постачання 21-31 дні (днів)
1+741.43 грн
10+ 669.29 грн
25+ 594.87 грн
50+ 530.36 грн
100+ 502.45 грн
250+ 446.62 грн
500+ 411.84 грн
1000+ 384.38 грн
FF1200XTR17T2P5BPSA1 Infineon Technologies Infineon-FF1200XTR17T2P5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c4ca520631d81 Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.2kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1200000 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 56000 pF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+68854.79 грн
10+ 65276.6 грн
S26KS256SDABHV030 S26KS256SDABHV030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
товар відсутній
IPP220N25NFDAKSA1 IPP220N25NFDAKSA1 Infineon Technologies DS_IPP220N25NFD_2_0.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043440adf7501440cad711f0178 Description: MOSFET N-CH 250V 61A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 61A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7076 pF @ 125 V
на замовлення 903 шт:
термін постачання 21-31 дні (днів)
1+433.41 грн
50+ 333.33 грн
100+ 298.24 грн
500+ 246.96 грн
CY8C4147LQA-S283T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
товар відсутній
CY8C4147AZA-S285T CY8C4147AZA-S285T Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
товар відсутній
IM69D128SV01XTMA1 IM69D128SV01XTMA1 Infineon Technologies Infineon-IM69D128S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185dfa527036dad Description: MIC MEMS DIGITAL PDM NC -37DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -37dB ±1dB @ 128dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Noise Cancelling
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Current - Supply: 520 µA
Voltage Range: 1.62 V ~ 3.6 V
товар відсутній
IM69D128SV01XTMA1 IM69D128SV01XTMA1 Infineon Technologies Infineon-IM69D128S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185dfa527036dad Description: MIC MEMS DIGITAL PDM NC -37DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -37dB ±1dB @ 128dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Noise Cancelling
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Current - Supply: 520 µA
Voltage Range: 1.62 V ~ 3.6 V
на замовлення 3139 шт:
термін постачання 21-31 дні (днів)
3+145.78 грн
10+ 114.19 грн
25+ 105.21 грн
50+ 92.87 грн
100+ 87.35 грн
250+ 80.6 грн
500+ 74.62 грн
1000+ 70.26 грн
Мінімальне замовлення: 3
CY9BF566KPMC-G-JNE2 CY9BF566KPMC-G-JNE2 Infineon Technologies download Description: IC MCU 32BIT 544KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
товар відсутній
CY9BF566LQN-G-AVE2 CY9BF566LQN-G-AVE2 Infineon Technologies download Description: IC MCU 32BIT 544KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
товар відсутній
IMDQ75R040M1HXUMA1 Infineon-IMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae16d7a37e64
IMDQ75R040M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
товар відсутній
IMDQ75R040M1HXUMA1 Infineon-IMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae16d7a37e64
IMDQ75R040M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
на замовлення 694 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+769.64 грн
10+ 669.59 грн
25+ 638.4 грн
100+ 520.22 грн
250+ 496.84 грн
IMDQ75R016M1HXUMA1 Infineon-IMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b61330f5e21f8
IMDQ75R016M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20A
Power Dissipation (Max): 384W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
товар відсутній
IMDQ75R016M1HXUMA1 Infineon-IMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b61330f5e21f8
IMDQ75R016M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20A
Power Dissipation (Max): 384W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
на замовлення 593 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1425.64 грн
10+ 1266.05 грн
25+ 1209.16 грн
100+ 1014.6 грн
250+ 967.87 грн
BSB104N08NP3GXUMA3 Infineon-BSB104N08NP3%20G-DataSheet-v02_02-EN.pdf?fileId=db3a304341e0aed00141efc548ca1b2b
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.8W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
Supplier Device Package: MG-WDSON-2-6
товар відсутній
IRFB4228PBFXKMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
товар відсутній
ESD120B1W0201E6327XTSA1 Infineon-ESD120-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172cccee8570172
ESD120B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODES SG-WLL-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.24pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.1V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 5.7V (Typ)
Power - Peak Pulse: 9W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
15000+2.35 грн
Мінімальне замовлення: 15000
ESD120B1W0201E6327XTSA1 Infineon-ESD120-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172cccee8570172
ESD120B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODES SG-WLL-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.24pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.1V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 5.7V (Typ)
Power - Peak Pulse: 9W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
18+18.03 грн
26+ 12 грн
100+ 5.86 грн
500+ 4.59 грн
1000+ 3.19 грн
2000+ 2.76 грн
5000+ 2.52 грн
Мінімальне замовлення: 18
BAR 88-07LRH E6327 bar88series.pdf
BAR 88-07LRH E6327
Виробник: Infineon Technologies
Description: RF DIODE PIN 80V 250MW TSLP-4-7
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: PIN - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Resistance @ If, F: 600mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-4-7
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
REF5GR4780AG6W1TOBO1
REF5GR4780AG6W1TOBO1
Виробник: Infineon Technologies
Description: REF5GR4780AG6W1TOBO1
Packaging: Box
товар відсутній
CY8C22345-24PVXAT Infineon-CY8C21345_CY8C21645_CY8C22345_CY8C22345H_CY8C22645_AUTOMOTIVE_PSOC_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6fac13da5&utm_source=cypress&utm_medium=referral&utm_campaign=20211
CY8C22345-24PVXAT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 3x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
товар відсутній
CY23EP09ZXC-1H download
CY23EP09ZXC-1H
Виробник: Infineon Technologies
Description: IC CLK ZDB 9OUT 220MHZ 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 430 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1344.92 грн
10+ 1189.74 грн
25+ 1140.45 грн
100+ 942.99 грн
CYS0644AFNI-S2D43T Infineon-PSOC_6_MCU_CYS0644XXZI-S2D44_DATASHEET_(PRELIMINARY)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee90bbf71df
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Tape & Reel (TR)
Package / Case: 100-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-WLCSP (4.11x3.9)
Number of I/O: 82
товар відсутній
CY62157H30-55ZSXET
Виробник: Infineon Technologies
Description: ASYNC
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
товар відсутній
CY62157H30-55ZSXE
Виробник: Infineon Technologies
Description: ASYNC
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
товар відсутній
S25FL128LAGMFM000 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LAGMFM000
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+478.87 грн
10+ 421.06 грн
25+ 413.07 грн
40+ 384.84 грн
80+ 345.31 грн
240+ 344.02 грн
FF3MR20KM1HHPSA1 Infineon-FF3MR20KM1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a8bcde381a
FF3MR20KM1HHPSA1
Виробник: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 2000 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+55605.49 грн
10+ 51678.55 грн
IRGP4630D-EPBF IRGx4630D%28-E%29PbF.pdf
IRGP4630D-EPBF
Виробник: Infineon Technologies
Description: IGBT 600V 47A 206W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
товар відсутній
S71KS512SC0BHB000 Infineon-512_MBIT_HYPERFLASH_+_64_MBIT_HYPERRAM_3V_MCP-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee30f916a0a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S71KS512SC0BHB000
Виробник: Infineon Technologies
Description: IC FLASH RAM 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, DRAM
Clock Frequency: 166 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: Parallel
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 942 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1371.56 грн
10+ 1172.23 грн
25+ 1117.89 грн
40+ 1023.82 грн
80+ 987.59 грн
230+ 959.03 грн
S71KL512SC0BHV003 Infineon-512_MBIT_HYPERFLASH_+_64_MBIT_HYPERRAM_3V_MCP-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee30f916a0a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S71KL512SC0BHV003
Виробник: Infineon Technologies
Description: IC FLASH RAM 512MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH, DRAM
Clock Frequency: 100 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
товар відсутній
S71KS512SC0BHB003 Infineon-512_MBIT_HYPERFLASH_+_64_MBIT_HYPERRAM_3V_MCP-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee30f916a0a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S71KS512SC0BHB003
Виробник: Infineon Technologies
Description: IC FLASH RAM 512MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, DRAM
Clock Frequency: 166 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: Parallel
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
TT820N16KS20HPSA1
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
товар відсутній
BB 565-02V E7902 bb545series_bb565series.pdf
BB 565-02V E7902
Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 11
товар відсутній
BB 565 E7902 bb545series_bb565series.pdf
BB 565 E7902
Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 11
товар відсутній
BB 565 E7908 bb545series_bb565series.pdf
BB 565 E7908
Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 11
товар відсутній
IRSM836-025MA irsm836-025ma.pdf
IRSM836-025MA
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tray
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
на замовлення 790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+622.3 грн
10+ 541.59 грн
25+ 516.38 грн
160+ 420.78 грн
320+ 401.87 грн
480+ 366.41 грн
IRSM836-044MATR Infineon-IRSM836-044MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e06c0d7e68
IRSM836-044MATR
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+271.9 грн
Мінімальне замовлення: 2000
IRSM836-044MATR Infineon-IRSM836-044MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e06c0d7e68
IRSM836-044MATR
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+497.68 грн
10+ 433.06 грн
25+ 412.89 грн
100+ 336.45 грн
250+ 321.33 грн
500+ 292.97 грн
1000+ 250.99 грн
IRSM836-045MATR Infineon-IRSM836-045MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e088867e6f
IRSM836-045MATR
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tape & Reel (TR)
Package / Case: 37-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 37-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
товар відсутній
IRSM836-045MATR Infineon-IRSM836-045MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e088867e6f
IRSM836-045MATR
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Cut Tape (CT)
Package / Case: 37-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 37-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
на замовлення 1855 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+811.96 грн
10+ 706.04 грн
25+ 673.18 грн
100+ 548.55 грн
250+ 523.89 грн
500+ 477.67 грн
1000+ 409.21 грн
IRSM836-024MATR irsm836-024ma.pdf
IRSM836-024MATR
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
товар відсутній
IRSM836-015MA irsm836-015ma.pdf?fileId=5546d462533600a40153567f22fc289a
IRSM836-015MA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1A 36QFN
Packaging: Tray
Features: Bootstrap Circuit
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 4.8Ohm
Applications: AC Motors
Current - Output / Channel: 1A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
товар відсутній
IRSM836-035MBTR irsm836-035mb.pdf
IRSM836-035MBTR
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 27PQFN
Packaging: Tape & Reel (TR)
Package / Case: 31-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 27-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
товар відсутній
AUIRF3805L INFN-S-A0008053181-1.pdf?t.download=true&u=5oefqw
AUIRF3805L
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 160A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
товар відсутній
FS150R17N3E4BOSA1 Infineon-FS150R17N3E4-DS-v02_00-en_de.pdf?fileId=db3a3043397219b6013976728bad5265
FS150R17N3E4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 150A 835W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 835 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+14551.1 грн
IFS100B12N3E4PB11BPSA1 IFS100B12N3E4P_B11.PDF
IFS100B12N3E4PB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 150A 515W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+14451.57 грн
CY7C68023-56LFXC
CY7C68023-56LFXC
Виробник: Infineon Technologies
Description: IC CTLR USB NX2LP NAND 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Type: NAND Flash - USB
Supplier Device Package: 56-QFN (8x8)
товар відсутній
CY7C68023-56LTXC Infineon-CY7C68023_CY7C68024_EZ-USB_NX2LP_USB_2.0_NAND_FLASH_CONTROLLER-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9e897422f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C68023-56LTXC
Виробник: Infineon Technologies
Description: IC USB CTLR NAND NX2LP 56QFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Type: NAND Flash - USB
Supplier Device Package: 56-QFN-EP (8x8)
товар відсутній
CY7C68023-56LTXCT
CY7C68023-56LTXCT
Виробник: Infineon Technologies
Description: IC MEMORY CONTROLLERS 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Type: NAND Flash - USB
Supplier Device Package: 56-QFN-EP (8x8)
товар відсутній
S26HS512TGABHV003 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS512TGABHV003
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товар відсутній
FP30R06W1E3B11BOMA1 Infineon-FP30R06W1E3_B11-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012af0c5c0515dc5
FP30R06W1E3B11BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 37A 115W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 37 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 115 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3470.44 грн
24+ 2977.44 грн
FS30R06W1E3B11BOMA1 Infineon-FS30R06W1E3_B11-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012af0cbc6185dd9
FS30R06W1E3B11BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 45A 150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
товар відсутній
FS30R06VE3BOMA1 Infineon-FS30R06VE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b432e6bb5a0c
FS30R06VE3BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 34A 88W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 88 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
товар відсутній
FS30R06XE3BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 37A 100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 37 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
товар відсутній
IRFB4115PBFXKMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 62A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
товар відсутній
CY22150KFZXCT download
CY22150KFZXCT
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
IRFP4229PBFXKMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
товар відсутній
CY9BF168RPMC-GNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF168RPMC-GNE2
Виробник: Infineon Technologies
Description: IC MCU 32B 1.03125MB FLSH 120QFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
на замовлення 835 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+698.32 грн
10+ 617.74 грн
25+ 592.12 грн
84+ 528.83 грн
IQD063N15NM5CGATMA1 Infineon-IQD063N15NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188b384db7e0809
IQD063N15NM5CGATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
товар відсутній
IQD063N15NM5CGATMA1 Infineon-IQD063N15NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188b384db7e0809
IQD063N15NM5CGATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
товар відсутній
PVA1354NSPBF pva13n.pdf?fileId=5546d462533600a401535683928a291e
PVA1354NSPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 375MA 0-100V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 375 mA
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
на замовлення 1746 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+741.43 грн
10+ 669.29 грн
25+ 594.87 грн
50+ 530.36 грн
100+ 502.45 грн
250+ 446.62 грн
500+ 411.84 грн
1000+ 384.38 грн
FF1200XTR17T2P5BPSA1 Infineon-FF1200XTR17T2P5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c4ca520631d81
Виробник: Infineon Technologies
Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.2kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1200000 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 56000 pF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+68854.79 грн
10+ 65276.6 грн
S26KS256SDABHV030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS256SDABHV030
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
товар відсутній
IPP220N25NFDAKSA1 DS_IPP220N25NFD_2_0.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043440adf7501440cad711f0178
IPP220N25NFDAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 61A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 61A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7076 pF @ 125 V
на замовлення 903 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+433.41 грн
50+ 333.33 грн
100+ 298.24 грн
500+ 246.96 грн
CY8C4147LQA-S283T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
товар відсутній
CY8C4147AZA-S285T
CY8C4147AZA-S285T
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
товар відсутній
IM69D128SV01XTMA1 Infineon-IM69D128S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185dfa527036dad
IM69D128SV01XTMA1
Виробник: Infineon Technologies
Description: MIC MEMS DIGITAL PDM NC -37DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -37dB ±1dB @ 128dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Noise Cancelling
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Current - Supply: 520 µA
Voltage Range: 1.62 V ~ 3.6 V
товар відсутній
IM69D128SV01XTMA1 Infineon-IM69D128S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185dfa527036dad
IM69D128SV01XTMA1
Виробник: Infineon Technologies
Description: MIC MEMS DIGITAL PDM NC -37DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -37dB ±1dB @ 128dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Noise Cancelling
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Current - Supply: 520 µA
Voltage Range: 1.62 V ~ 3.6 V
на замовлення 3139 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+145.78 грн
10+ 114.19 грн
25+ 105.21 грн
50+ 92.87 грн
100+ 87.35 грн
250+ 80.6 грн
500+ 74.62 грн
1000+ 70.26 грн
Мінімальне замовлення: 3
CY9BF566KPMC-G-JNE2 download
CY9BF566KPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
товар відсутній
CY9BF566LQN-G-AVE2 download
CY9BF566LQN-G-AVE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
товар відсутній
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