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EVAL2ED020I12F2TOBO1 EVAL2ED020I12F2TOBO1 Infineon Technologies Infineon-EVAL_2ED020I12-F2-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029a78ed602f3 Description: EVAL-2ED020I12-F2 TO SHOW THE FU
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2ED020I12-F2
Supplied Contents: Board(s)
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+7238.08 грн
KITAURIXTC275ARDSBTOBO1 KITAURIXTC275ARDSBTOBO1 Infineon Technologies Infineon-ShieldBuddy_TC275%20-UM-v02_08-EN.pdf?fileId=5546d46269e1c019016a54f0801a5590 Description: SHIELDBUDDYTC275-AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC275
Platform: AURIX
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
1+9554.72 грн
PTFA181001FV4R250FTMA1 PTFA181001FV4R250FTMA1 Infineon Technologies PTFA181001(E,F).pdf Description: IC FET RF LDMOS 100W H-37248-2
товар відсутній
IRLR3636TRLPBF IRLR3636TRLPBF Infineon Technologies IRSDS10828-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
на замовлення 1111 шт:
термін постачання 21-31 дні (днів)
3+132.29 грн
10+ 105.5 грн
100+ 83.98 грн
500+ 66.68 грн
1000+ 56.58 грн
Мінімальне замовлення: 3
IRFR3504ZTR IRFR3504ZTR Infineon Technologies IRFR3504Z%2C%20IRFU3504Z.pdf Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товар відсутній
IRFR3504ZTRL IRFR3504ZTRL Infineon Technologies IRFR3504Z%2C%20IRFU3504Z.pdf Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товар відсутній
IRFR3504ZTRR IRFR3504ZTRR Infineon Technologies IRFR3504Z,%20IRFU3504Z.pdf Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товар відсутній
64-4059PBF 64-4059PBF Infineon Technologies irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товар відсутній
IRFR3504ZTRLPBF IRFR3504ZTRLPBF Infineon Technologies irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товар відсутній
IRFR3504ZTRRPBF IRFR3504ZTRRPBF Infineon Technologies irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товар відсутній
BCR169WE6327 BCR169WE6327 Infineon Technologies INFNS11715-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
13172+1.4 грн
Мінімальне замовлення: 13172
TLF50211ELXUMA1 TLF50211ELXUMA1 Infineon Technologies TLF50211E.pdf Description: SWITCHING REGULATOR
товар відсутній
TLF50281ELXUMA1 TLF50281ELXUMA1 Infineon Technologies Infineon-TLF50281EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc1015969d2c73f41f2 Description: IC REG BUCK 5V 500MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-EP
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
на замовлення 1034 шт:
термін постачання 21-31 дні (днів)
302+69.95 грн
Мінімальне замовлення: 302
IPD30N06S3-24 IPD30N06S3-24 Infineon Technologies INFNS11065-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
товар відсутній
IPD230N06LG IPD230N06LG Infineon Technologies INFNS15837-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
товар відсутній
IPB230N06L3G IPB230N06L3G Infineon Technologies INFNS19526-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
товар відсутній
IPP230N06L3GXKSA1 IPP230N06L3GXKSA1 Infineon Technologies INFNS19526-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
831+25.18 грн
Мінімальне замовлення: 831
IPP230N06L3G IPP230N06L3G Infineon Technologies INFNS19526-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
на замовлення 9620 шт:
термін постачання 21-31 дні (днів)
693+30.08 грн
Мінімальне замовлення: 693
BGA420H6433XTMA1 BGA420H6433XTMA1 Infineon Technologies bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637 Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
на замовлення 119220 шт:
термін постачання 21-31 дні (днів)
720+29.48 грн
Мінімальне замовлення: 720
ICE3RBR0665JZXKLA1 ICE3RBR0665JZXKLA1 Infineon Technologies INFNS27653-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 71 W
на замовлення 9991 шт:
термін постачання 21-31 дні (днів)
2+164.23 грн
10+ 142.26 грн
50+ 134.47 грн
100+ 109.36 грн
250+ 103.75 грн
500+ 98.74 грн
Мінімальне замовлення: 2
ICE3RBR0665JGXUMA1 ICE3RBR0665JGXUMA1 Infineon Technologies Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 66 W
товар відсутній
ICE3RBR0665JGXUMA1 ICE3RBR0665JGXUMA1 Infineon Technologies Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 66 W
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
2+211.36 грн
10+ 182.52 грн
25+ 172.61 грн
100+ 140.37 грн
250+ 133.17 грн
500+ 119.49 грн
1000+ 99.13 грн
Мінімальне замовлення: 2
FS15R06XL4BOMA1 FS15R06XL4BOMA1 Infineon Technologies Description: IGBT MODULE 600V 20A 81W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
12+1751.36 грн
Мінімальне замовлення: 12
FP15R06YE3B4BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY2-1
товар відсутній
FZ2000R33HE4BOSA1 FZ2000R33HE4BOSA1 Infineon Technologies Infineon-FZ2000R33HE4-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed15a9df22af8 Description: IGBT MOD IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 2kA (Typ)
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 4.2 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+188721.45 грн
IPU50R950CE IPU50R950CE Infineon Technologies INFN-S-A0002263195-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
на замовлення 235740 шт:
термін постачання 21-31 дні (днів)
1731+12.23 грн
Мінімальне замовлення: 1731
IPU50R950CEBTMA1 IPU50R950CEBTMA1 Infineon Technologies INFN-S-A0001301404-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3-345
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
на замовлення 4380 шт:
термін постачання 21-31 дні (днів)
1731+12.23 грн
Мінімальне замовлення: 1731
DHS1011AUMA1 DHS1011AUMA1 Infineon Technologies Description: DSO-12-13
Packaging: Bulk
товар відсутній
BC818K16WH6327XTSA1 BC818K16WH6327XTSA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 25V 0.5A SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)
5106+4.21 грн
Мінімальне замовлення: 5106
CY2907FX14 CY2907FX14 Infineon Technologies CY2907.pdf Description: IC CLOCK GENERATOR 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 14-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 3958 шт:
термін постачання 21-31 дні (днів)
229+91.63 грн
Мінімальне замовлення: 229
BCW68GE6327 BCW68GE6327 Infineon Technologies INFNS11571-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товар відсутній
CYUSB3014-FBXCT CYUSB3014-FBXCT Infineon Technologies download Description: IC USB CTLR
Packaging: Tape & Reel (TR)
Package / Case: 131-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: GPIF, I²C, I²S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 131-WLCSP (5.1x4.7)
Part Status: Obsolete
Number of I/O: 60
товар відсутній
CYUSB3014-FBXCT CYUSB3014-FBXCT Infineon Technologies download Description: IC USB CTLR
Packaging: Cut Tape (CT)
Package / Case: 131-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: GPIF, I²C, I²S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 131-WLCSP (5.1x4.7)
Part Status: Obsolete
Number of I/O: 60
товар відсутній
IRGB30B60KPBF-INF Infineon Technologies Description: IGBT, 75A I(C), 600V V(BR)CES, N
товар відсутній
IRGB15B60KDPBF-INF IRGB15B60KDPBF-INF Infineon Technologies IRSDS10534-1.pdf?t.download=true&u=5oefqw Description: IGBT, 31A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/184ns
Switching Energy: 220µJ (on), 340µJ (off)
Test Condition: 400V, 15A, 22Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 208 W
на замовлення 2320 шт:
термін постачання 21-31 дні (днів)
141+150.24 грн
Мінімальне замовлення: 141
IRGB4B60KPBF IRGB4B60KPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 600V 12A 63W TO220A
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 130µJ (on), 83µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 63 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
532+42.58 грн
Мінімальне замовлення: 532
CY96F673ABPMC1-GS109UJE2 CY96F673ABPMC1-GS109UJE2 Infineon Technologies download Description: IC MCU 16BIT 96KB FLASH 64LQFP
товар відсутній
CY96F693ABPMC-GS109-UJE2 CY96F693ABPMC-GS109-UJE2 Infineon Technologies Infineon-CY96690_Series_F2MC-16FX_16-bit_Proprietary_Microcontroller-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd4ab561a3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 96KB FLASH 100LQFP
товар відсутній
CYW20706UA1KFFB1GT CYW20706UA1KFFB1GT Infineon Technologies download Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
2500+102.02 грн
Мінімальне замовлення: 2500
CYW20706UA1KFFB1G CYW20706UA1KFFB1G Infineon Technologies download Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
3+101.88 грн
Мінімальне замовлення: 3
CYW20706UA1KFFB1GT CYW20706UA1KFFB1GT Infineon Technologies download Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CYW20706UA1KFFB4G CYW20706UA1KFFB4G Infineon Technologies download Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CY7C1327G-166AXC CY7C1327G-166AXC Infineon Technologies Infineon-CY7C1327G_4-Mbit_(256_K_18)_Pipelined_Sync_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec41d4b3988 Description: IC SRAM 4.5MBIT PAR 100TQFP
на замовлення 352 шт:
термін постачання 21-31 дні (днів)
2+165.75 грн
Мінімальне замовлення: 2
IMW65R072M1HXKSA1 IMW65R072M1HXKSA1 Infineon Technologies Infineon-IMW65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85c9c62a0482 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
1+580.87 грн
30+ 446.48 грн
120+ 399.48 грн
BSP78E6327 BSP78E6327 Infineon Technologies Description: POWER SWITCH SMART LOW
Packaging: Bulk
Part Status: Active
товар відсутній
BTS141NKSA1 BTS141NKSA1 Infineon Technologies INFNS27674-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
товар відсутній
BTS141E3045ANTMA1 Infineon Technologies INFNS27674-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
на замовлення 21358 шт:
термін постачання 21-31 дні (днів)
135+158.81 грн
Мінімальне замовлення: 135
BSL211SPL6327 BSL211SPL6327 Infineon Technologies INFNS17497-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
товар відсутній
IPLK70R600P7ATMA1 IPLK70R600P7ATMA1 Infineon Technologies Infineon-IPLK70R600P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198877d16b73 Description: MOSFET N-CH 700V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
товар відсутній
AUIRFP46310Z Infineon Technologies Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
Part Status: Active
товар відсутній
BTS282ZE3180AATMA1 BTS282ZE3180AATMA1 Infineon Technologies INFNS27932-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO263-7-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
BTS282ZE3230 Infineon Technologies INFNS27932-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-7
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO220-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
BTS282ZE3180A BTS282ZE3180A Infineon Technologies INFNS27932-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO263-7-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
BTS282ZE3180ANTMA1 BTS282ZE3180ANTMA1 Infineon Technologies INFNS27932-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO263-7-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
BTS7741G BTS7741G Infineon Technologies INFNS25530-1.pdf?t.download=true&u=5oefqw Description: IC HALF BRIDGE DRIVER 7A PDSO28
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 100mOhm LS, 110mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 10A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: P-DSO-28
Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
148+143.19 грн
Мінімальне замовлення: 148
BTS7750G BTS7750G Infineon Technologies INFNS03487-1.pdf?t.download=true&u=5oefqw Description: BRUSH DC MOTOR CONTROLLER
Packaging: Bulk
Part Status: Active
товар відсутній
AIGB40N65H5ATMA1 AIGB40N65H5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: DISCRETE SWITCHES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
товар відсутній
TLI5012BE1000XUMA1 Infineon Technologies Infineon-TLI5012B+E1000-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014ff423fcd077a8 Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 9765 шт:
термін постачання 21-31 дні (днів)
1+367.99 грн
10+ 266.21 грн
25+ 236.66 грн
50+ 210.98 грн
100+ 205.43 грн
500+ 172.12 грн
1000+ 158.37 грн
BCM856SH6778 BCM856SH6778 Infineon Technologies INFNS17175-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-6-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.32 грн
Мінімальне замовлення: 3000
IPW50R140CPFKSA1 IPW50R140CPFKSA1 Infineon Technologies IPW50R140CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42daa4448bf Description: MOSFET N-CH 550V 23A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
на замовлення 50341 шт:
термін постачання 21-31 дні (днів)
93+225.16 грн
Мінімальне замовлення: 93
EVAL2ED020I12F2TOBO1 Infineon-EVAL_2ED020I12-F2-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029a78ed602f3
EVAL2ED020I12F2TOBO1
Виробник: Infineon Technologies
Description: EVAL-2ED020I12-F2 TO SHOW THE FU
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2ED020I12-F2
Supplied Contents: Board(s)
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+7238.08 грн
KITAURIXTC275ARDSBTOBO1 Infineon-ShieldBuddy_TC275%20-UM-v02_08-EN.pdf?fileId=5546d46269e1c019016a54f0801a5590
KITAURIXTC275ARDSBTOBO1
Виробник: Infineon Technologies
Description: SHIELDBUDDYTC275-AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC275
Platform: AURIX
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+9554.72 грн
PTFA181001FV4R250FTMA1 PTFA181001(E,F).pdf
PTFA181001FV4R250FTMA1
Виробник: Infineon Technologies
Description: IC FET RF LDMOS 100W H-37248-2
товар відсутній
IRLR3636TRLPBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
IRLR3636TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
на замовлення 1111 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+132.29 грн
10+ 105.5 грн
100+ 83.98 грн
500+ 66.68 грн
1000+ 56.58 грн
Мінімальне замовлення: 3
IRFR3504ZTR IRFR3504Z%2C%20IRFU3504Z.pdf
IRFR3504ZTR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товар відсутній
IRFR3504ZTRL IRFR3504Z%2C%20IRFU3504Z.pdf
IRFR3504ZTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товар відсутній
IRFR3504ZTRR IRFR3504Z,%20IRFU3504Z.pdf
IRFR3504ZTRR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товар відсутній
64-4059PBF irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b
64-4059PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товар відсутній
IRFR3504ZTRLPBF irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b
IRFR3504ZTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товар відсутній
IRFR3504ZTRRPBF irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b
IRFR3504ZTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товар відсутній
BCR169WE6327 INFNS11715-1.pdf?t.download=true&u=5oefqw
BCR169WE6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13172+1.4 грн
Мінімальне замовлення: 13172
TLF50211ELXUMA1 TLF50211E.pdf
TLF50211ELXUMA1
Виробник: Infineon Technologies
Description: SWITCHING REGULATOR
товар відсутній
TLF50281ELXUMA1 Infineon-TLF50281EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc1015969d2c73f41f2
TLF50281ELXUMA1
Виробник: Infineon Technologies
Description: IC REG BUCK 5V 500MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-EP
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
на замовлення 1034 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
302+69.95 грн
Мінімальне замовлення: 302
IPD30N06S3-24 INFNS11065-1.pdf?t.download=true&u=5oefqw
IPD30N06S3-24
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
товар відсутній
IPD230N06LG INFNS15837-1.pdf?t.download=true&u=5oefqw
IPD230N06LG
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
товар відсутній
IPB230N06L3G INFNS19526-1.pdf?t.download=true&u=5oefqw
IPB230N06L3G
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
товар відсутній
IPP230N06L3GXKSA1 INFNS19526-1.pdf?t.download=true&u=5oefqw
IPP230N06L3GXKSA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
831+25.18 грн
Мінімальне замовлення: 831
IPP230N06L3G INFNS19526-1.pdf?t.download=true&u=5oefqw
IPP230N06L3G
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
на замовлення 9620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
693+30.08 грн
Мінімальне замовлення: 693
BGA420H6433XTMA1 bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637
BGA420H6433XTMA1
Виробник: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
на замовлення 119220 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
720+29.48 грн
Мінімальне замовлення: 720
ICE3RBR0665JZXKLA1 INFNS27653-1.pdf?t.download=true&u=5oefqw
ICE3RBR0665JZXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 71 W
на замовлення 9991 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+164.23 грн
10+ 142.26 грн
50+ 134.47 грн
100+ 109.36 грн
250+ 103.75 грн
500+ 98.74 грн
Мінімальне замовлення: 2
ICE3RBR0665JGXUMA1 Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514
ICE3RBR0665JGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 66 W
товар відсутній
ICE3RBR0665JGXUMA1 Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514
ICE3RBR0665JGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 66 W
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+211.36 грн
10+ 182.52 грн
25+ 172.61 грн
100+ 140.37 грн
250+ 133.17 грн
500+ 119.49 грн
1000+ 99.13 грн
Мінімальне замовлення: 2
FS15R06XL4BOMA1
FS15R06XL4BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 20A 81W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+1751.36 грн
Мінімальне замовлення: 12
FP15R06YE3B4BOMA1
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
товар відсутній
FZ2000R33HE4BOSA1 Infineon-FZ2000R33HE4-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed15a9df22af8
FZ2000R33HE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 2kA (Typ)
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 4.2 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+188721.45 грн
IPU50R950CE INFN-S-A0002263195-1.pdf?t.download=true&u=5oefqw
IPU50R950CE
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
на замовлення 235740 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1731+12.23 грн
Мінімальне замовлення: 1731
IPU50R950CEBTMA1 INFN-S-A0001301404-1.pdf?t.download=true&u=5oefqw
IPU50R950CEBTMA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3-345
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
на замовлення 4380 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1731+12.23 грн
Мінімальне замовлення: 1731
DHS1011AUMA1
DHS1011AUMA1
Виробник: Infineon Technologies
Description: DSO-12-13
Packaging: Bulk
товар відсутній
BC818K16WH6327XTSA1 4a-BC-817-40-E6433.pdf
BC818K16WH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 25V 0.5A SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5106+4.21 грн
Мінімальне замовлення: 5106
CY2907FX14 CY2907.pdf
CY2907FX14
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 14-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 3958 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
229+91.63 грн
Мінімальне замовлення: 229
BCW68GE6327 INFNS11571-1.pdf?t.download=true&u=5oefqw
BCW68GE6327
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товар відсутній
CYUSB3014-FBXCT download
CYUSB3014-FBXCT
Виробник: Infineon Technologies
Description: IC USB CTLR
Packaging: Tape & Reel (TR)
Package / Case: 131-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: GPIF, I²C, I²S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 131-WLCSP (5.1x4.7)
Part Status: Obsolete
Number of I/O: 60
товар відсутній
CYUSB3014-FBXCT download
CYUSB3014-FBXCT
Виробник: Infineon Technologies
Description: IC USB CTLR
Packaging: Cut Tape (CT)
Package / Case: 131-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: GPIF, I²C, I²S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 131-WLCSP (5.1x4.7)
Part Status: Obsolete
Number of I/O: 60
товар відсутній
IRGB30B60KPBF-INF
Виробник: Infineon Technologies
Description: IGBT, 75A I(C), 600V V(BR)CES, N
товар відсутній
IRGB15B60KDPBF-INF IRSDS10534-1.pdf?t.download=true&u=5oefqw
IRGB15B60KDPBF-INF
Виробник: Infineon Technologies
Description: IGBT, 31A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/184ns
Switching Energy: 220µJ (on), 340µJ (off)
Test Condition: 400V, 15A, 22Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 208 W
на замовлення 2320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
141+150.24 грн
Мінімальне замовлення: 141
IRGB4B60KPBF Part_Number_Guide_Web.pdf
IRGB4B60KPBF
Виробник: Infineon Technologies
Description: IGBT 600V 12A 63W TO220A
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 130µJ (on), 83µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 63 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
532+42.58 грн
Мінімальне замовлення: 532
CY96F673ABPMC1-GS109UJE2 download
CY96F673ABPMC1-GS109UJE2
Виробник: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 64LQFP
товар відсутній
CY96F693ABPMC-GS109-UJE2 Infineon-CY96690_Series_F2MC-16FX_16-bit_Proprietary_Microcontroller-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd4ab561a3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F693ABPMC-GS109-UJE2
Виробник: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 100LQFP
товар відсутній
CYW20706UA1KFFB1GT download
CYW20706UA1KFFB1GT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+102.02 грн
Мінімальне замовлення: 2500
CYW20706UA1KFFB1G download
CYW20706UA1KFFB1G
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+101.88 грн
Мінімальне замовлення: 3
CYW20706UA1KFFB1GT download
CYW20706UA1KFFB1GT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CYW20706UA1KFFB4G download
CYW20706UA1KFFB4G
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CY7C1327G-166AXC Infineon-CY7C1327G_4-Mbit_(256_K_18)_Pipelined_Sync_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec41d4b3988
CY7C1327G-166AXC
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
на замовлення 352 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+165.75 грн
Мінімальне замовлення: 2
IMW65R072M1HXKSA1 Infineon-IMW65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85c9c62a0482
IMW65R072M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+580.87 грн
30+ 446.48 грн
120+ 399.48 грн
BSP78E6327
BSP78E6327
Виробник: Infineon Technologies
Description: POWER SWITCH SMART LOW
Packaging: Bulk
Part Status: Active
товар відсутній
BTS141NKSA1 INFNS27674-1.pdf?t.download=true&u=5oefqw
BTS141NKSA1
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
товар відсутній
BTS141E3045ANTMA1 INFNS27674-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
на замовлення 21358 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
135+158.81 грн
Мінімальне замовлення: 135
BSL211SPL6327 INFNS17497-1.pdf?t.download=true&u=5oefqw
BSL211SPL6327
Виробник: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
товар відсутній
IPLK70R600P7ATMA1 Infineon-IPLK70R600P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198877d16b73
IPLK70R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
товар відсутній
AUIRFP46310Z
Виробник: Infineon Technologies
Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
Part Status: Active
товар відсутній
BTS282ZE3180AATMA1 INFNS27932-1.pdf?t.download=true&u=5oefqw
BTS282ZE3180AATMA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO263-7-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
BTS282ZE3230 INFNS27932-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-7
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO220-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
BTS282ZE3180A INFNS27932-1.pdf?t.download=true&u=5oefqw
BTS282ZE3180A
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO263-7-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
BTS282ZE3180ANTMA1 INFNS27932-1.pdf?t.download=true&u=5oefqw
BTS282ZE3180ANTMA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO263-7-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
BTS7741G INFNS25530-1.pdf?t.download=true&u=5oefqw
BTS7741G
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 7A PDSO28
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 100mOhm LS, 110mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 10A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: P-DSO-28
Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
148+143.19 грн
Мінімальне замовлення: 148
BTS7750G INFNS03487-1.pdf?t.download=true&u=5oefqw
BTS7750G
Виробник: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER
Packaging: Bulk
Part Status: Active
товар відсутній
AIGB40N65H5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB40N65H5ATMA1
Виробник: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
товар відсутній
TLI5012BE1000XUMA1 Infineon-TLI5012B+E1000-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014ff423fcd077a8
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 9765 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+367.99 грн
10+ 266.21 грн
25+ 236.66 грн
50+ 210.98 грн
100+ 205.43 грн
500+ 172.12 грн
1000+ 158.37 грн
BCM856SH6778 INFNS17175-1.pdf?t.download=true&u=5oefqw
BCM856SH6778
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-6-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+8.32 грн
Мінімальне замовлення: 3000
IPW50R140CPFKSA1 IPW50R140CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42daa4448bf
IPW50R140CPFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 23A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
на замовлення 50341 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
93+225.16 грн
Мінімальне замовлення: 93
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